中文
English
FQD5N30TM-VB Product details
Back to previous pageProduct introduction：
1. FQD5N30TM-VB Product Introduction
FQD5N30TM-VB is a single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. It uses SJ_Multi-EPI technology, which enhances its high voltage handling capability and reliability. This MOSFET provides up to 650V drain-source voltage and 7A drain current, suitable for switches and power management systems that need to handle high voltage and medium current. Despite its relatively high on-resistance, this MOSFET still provides reliable performance at its high voltage handling capability.
FQD5N30TM-VB is a single N-channel MOSFET in TO252 package, designed for high voltage and high current applications. It uses SJ_Multi-EPI technology, which enhances its high voltage handling capability and reliability. This MOSFET provides up to 650V drain-source voltage and 7A drain current, suitable for switches and power management systems that need to handle high voltage and medium current. Despite its relatively high on-resistance, this MOSFET still provides reliable performance at its high voltage handling capability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FQD5N30TM-VB Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 700mΩ @ VGS = 10V
- **Drain current (ID)**: 7A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and modules of FQD5N30TM-VB
1. **High-voltage switch**: The high voltage withstand capability of FQD5N30TM-VB makes it very suitable for high-voltage switching applications, such as high-voltage DC-DC converters and high-voltage AC-DC converters. It is capable of handling voltages up to 650V and is suitable for switching and controlling high-voltage power supplies.
2. **Power management system**: In power management applications, this MOSFET can be used for high-voltage load switching and power regulation modules. It provides reliable performance in power protection and load management, especially in high-voltage power systems.
3. **Industrial control**: In industrial control systems, FQD5N30TM-VB can be used for high-voltage load switching and power distribution modules. It is capable of handling high voltages and is suitable for providing stable switching performance in industrial automation and control systems.
4. **Lighting system**: FQD5N30TM-VB is also suitable for high-voltage lighting applications, such as high-voltage LED drivers and high-voltage HID lamp controls. Its high voltage tolerance capability ensures stable current control and lighting effects in high voltage environments.
1. **High-voltage switch**: The high voltage withstand capability of FQD5N30TM-VB makes it very suitable for high-voltage switching applications, such as high-voltage DC-DC converters and high-voltage AC-DC converters. It is capable of handling voltages up to 650V and is suitable for switching and controlling high-voltage power supplies.
2. **Power management system**: In power management applications, this MOSFET can be used for high-voltage load switching and power regulation modules. It provides reliable performance in power protection and load management, especially in high-voltage power systems.
3. **Industrial control**: In industrial control systems, FQD5N30TM-VB can be used for high-voltage load switching and power distribution modules. It is capable of handling high voltages and is suitable for providing stable switching performance in industrial automation and control systems.
4. **Lighting system**: FQD5N30TM-VB is also suitable for high-voltage lighting applications, such as high-voltage LED drivers and high-voltage HID lamp controls. Its high voltage tolerance capability ensures stable current control and lighting effects in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
