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FQD4P40-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
FQD4P40-VB is a high-voltage P-type MOSFET in TO252 package, designed for high voltage applications. This MOSFET supports a maximum drain-source voltage (VDS) of -500V and can handle a maximum drain current of -2A. Its threshold voltage (Vth) is -3V, ensuring reliable turn-on at appropriate gate-source voltage. Manufactured using Plannar technology, FQD4P40-VB provides high voltage tolerance and reasonable on-resistance (RDS(ON)=3900mΩ@VGS=10V), suitable for application scenarios that require high voltage handling and reliable switching performance.
FQD4P40-VB is a high-voltage P-type MOSFET in TO252 package, designed for high voltage applications. This MOSFET supports a maximum drain-source voltage (VDS) of -500V and can handle a maximum drain current of -2A. Its threshold voltage (Vth) is -3V, ensuring reliable turn-on at appropriate gate-source voltage. Manufactured using Plannar technology, FQD4P40-VB provides high voltage tolerance and reasonable on-resistance (RDS(ON)=3900mΩ@VGS=10V), suitable for application scenarios that require high voltage handling and reliable switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | 3900mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -500V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 4875mΩ@VGS=4.5V
- 3900mΩ@VGS=10V
- **Maximum drain current (ID)**: -2A
- **Technology**: Plannar
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
- **Package type**: TO252
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -500V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**:
- 4875mΩ@VGS=4.5V
- 3900mΩ@VGS=10V
- **Maximum drain current (ID)**: -2A
- **Technology**: Plannar
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
Domain and module applications：
3. Application fields and modules
The high voltage tolerance and reliable switching performance of FQD4P40-VB MOSFET make it very suitable for multiple fields and modules, including:
1. **High voltage power management**: This MOSFET is very suitable for use in high voltage power management systems, such as high voltage DC-DC converters and switching power supplies. Its 500V drain-source voltage handling capability enables it to work stably under high voltage input conditions, ensuring the safety and stability of the power system.
2. **Load switch**: Suitable for scenarios requiring high voltage load switching, such as industrial equipment and power switch control. FQD4P40-VB can effectively control high voltage load switches, provide reliable switching functions, and is suitable for high voltage switching applications.
3. **Motor control**: In motor drive circuits that require high voltage control, FQD4P40-VB can be used to control the switching of high voltage motors to ensure stable operation of motors under high voltage conditions.
4. **Inverter circuit**: Suitable for photovoltaic inverters and uninterruptible power supplies (UPS), FQD4P40-VB can be used as a high-voltage switching element to handle high voltage conversion and ensure the efficient performance and reliability of the inverter.
In summary, FQD4P40-VB MOSFET, with its high voltage handling capability and reliable switching characteristics, is very suitable for high-voltage power management, load switching, motor control and inverter circuits, and other application scenarios that require high breakdown voltage and stability.
The high voltage tolerance and reliable switching performance of FQD4P40-VB MOSFET make it very suitable for multiple fields and modules, including:
1. **High voltage power management**: This MOSFET is very suitable for use in high voltage power management systems, such as high voltage DC-DC converters and switching power supplies. Its 500V drain-source voltage handling capability enables it to work stably under high voltage input conditions, ensuring the safety and stability of the power system.
2. **Load switch**: Suitable for scenarios requiring high voltage load switching, such as industrial equipment and power switch control. FQD4P40-VB can effectively control high voltage load switches, provide reliable switching functions, and is suitable for high voltage switching applications.
3. **Motor control**: In motor drive circuits that require high voltage control, FQD4P40-VB can be used to control the switching of high voltage motors to ensure stable operation of motors under high voltage conditions.
4. **Inverter circuit**: Suitable for photovoltaic inverters and uninterruptible power supplies (UPS), FQD4P40-VB can be used as a high-voltage switching element to handle high voltage conversion and ensure the efficient performance and reliability of the inverter.
In summary, FQD4P40-VB MOSFET, with its high voltage handling capability and reliable switching characteristics, is very suitable for high-voltage power management, load switching, motor control and inverter circuits, and other application scenarios that require high breakdown voltage and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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