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FQD4P40TM-VB Product details
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FQD4P40TM-VB Product Introduction
FQD4P40TM-VB is a single P-channel power MOSFET in TO252 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of -500V and supports a gate-source voltage (VGS) of ±20V. Its typical turn-on voltage is -3V, and its on-resistance is 4875mΩ at VGS=4.5V and 3900mΩ at VGS=10V. The maximum drain current of FQD4P40TM-VB is -2A, and it uses planar process technology, making it suitable for switching applications requiring high voltage and medium current, such as power management and power conversion modules.
FQD4P40TM-VB is a single P-channel power MOSFET in TO252 package, designed for high voltage applications. The device has a drain-source voltage (VDS) of -500V and supports a gate-source voltage (VGS) of ±20V. Its typical turn-on voltage is -3V, and its on-resistance is 4875mΩ at VGS=4.5V and 3900mΩ at VGS=10V. The maximum drain current of FQD4P40TM-VB is -2A, and it uses planar process technology, making it suitable for switching applications requiring high voltage and medium current, such as power management and power conversion modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | 3900mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
FQD4P40TM-VB Detailed parameter description
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, with good heat dissipation and compact design, suitable for a variety of electronic applications.
2. **Polarity**: Single P-channel
As a single P-channel MOSFET, the FQD4P40TM-VB is suitable for high-side switch applications for switching control of loads.
3. **Drain-source voltage (VDS)**: -500V
The maximum drain-source voltage of this MOSFET is -500V, which can work stably in a high voltage environment.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltages up to ±20V to ensure stability and reliability under various operating conditions.
5. **Throw-on voltage (Vth)**: -3V
The typical turn-on voltage is -3V, which allows the MOSFET to be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- 4875mΩ @ VGS=4.5V
- 3900mΩ @ VGS=10V
When VGS=10V, the on-resistance is 3900mΩ, which is suitable for switching applications requiring high voltage.
7. **Drain current (ID)**: -2A
The maximum drain current is -2A, which is suitable for medium current switching applications.
8. **Technology**: Planar technology (Plannar)
Using planar technology, it provides stable switching performance and good voltage resistance, suitable for high voltage applications.
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, with good heat dissipation and compact design, suitable for a variety of electronic applications.
2. **Polarity**: Single P-channel
As a single P-channel MOSFET, the FQD4P40TM-VB is suitable for high-side switch applications for switching control of loads.
3. **Drain-source voltage (VDS)**: -500V
The maximum drain-source voltage of this MOSFET is -500V, which can work stably in a high voltage environment.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltages up to ±20V to ensure stability and reliability under various operating conditions.
5. **Throw-on voltage (Vth)**: -3V
The typical turn-on voltage is -3V, which allows the MOSFET to be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- 4875mΩ @ VGS=4.5V
- 3900mΩ @ VGS=10V
When VGS=10V, the on-resistance is 3900mΩ, which is suitable for switching applications requiring high voltage.
7. **Drain current (ID)**: -2A
The maximum drain current is -2A, which is suitable for medium current switching applications.
8. **Technology**: Planar technology (Plannar)
Using planar technology, it provides stable switching performance and good voltage resistance, suitable for high voltage applications.
Domain and module applications：
Application fields and module examples
1. **High voltage switching power supply**:
FQD4P40TM-VB can be used as the main switching device in high voltage switching power supply to handle the switching control of the power supply. Its 500V drain-source voltage makes it suitable for switching control in high voltage environments, especially in power conversion and regulation modules.
2. **Power converter**:
In power converter applications, such as AC-DC converters or DC-DC converters, FQD4P40TM-VB can be used as a switching controller to manage the power conversion process and improve the overall efficiency of the system, especially in situations where high voltage needs to be handled.
3. **High voltage load switch**:
This MOSFET is suitable for high voltage load switching applications, such as motor drives and high voltage lighting systems, by providing stable switching control to optimize the operation and performance of the load.
4. **Power Management System**:
In high voltage power management systems, FQD4P40TM-VB can be used as a switch control device to manage the switching state and current flow of the power supply to ensure the normal operation and safety of the system.
5. **Industrial Application**:
In high voltage industrial equipment, such as high voltage power supplies and equipment control systems, FQD4P40TM-VB can be used as a switch controller to provide reliable switching operation and high voltage tolerance, suitable for applications in complex industrial environments.
These application examples demonstrate the wide applicability of FQD4P40TM-VB in high voltage switch control and power conversion, especially in systems that require high voltage and medium current handling.
1. **High voltage switching power supply**:
FQD4P40TM-VB can be used as the main switching device in high voltage switching power supply to handle the switching control of the power supply. Its 500V drain-source voltage makes it suitable for switching control in high voltage environments, especially in power conversion and regulation modules.
2. **Power converter**:
In power converter applications, such as AC-DC converters or DC-DC converters, FQD4P40TM-VB can be used as a switching controller to manage the power conversion process and improve the overall efficiency of the system, especially in situations where high voltage needs to be handled.
3. **High voltage load switch**:
This MOSFET is suitable for high voltage load switching applications, such as motor drives and high voltage lighting systems, by providing stable switching control to optimize the operation and performance of the load.
4. **Power Management System**:
In high voltage power management systems, FQD4P40TM-VB can be used as a switch control device to manage the switching state and current flow of the power supply to ensure the normal operation and safety of the system.
5. **Industrial Application**:
In high voltage industrial equipment, such as high voltage power supplies and equipment control systems, FQD4P40TM-VB can be used as a switch controller to provide reliable switching operation and high voltage tolerance, suitable for applications in complex industrial environments.
These application examples demonstrate the wide applicability of FQD4P40TM-VB in high voltage switch control and power conversion, especially in systems that require high voltage and medium current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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