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FQD4P40TF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
FQD4P40TF-VB is a high voltage P-channel MOSFET in TO-252 package, designed for applications that handle high voltage loads. Its maximum drain-source voltage is -500V, capable of handling switching and control tasks in negative voltage environments. This MOSFET uses Plannar process technology, has high voltage resistance and stable performance, and is suitable for power management, protection circuits and other high voltage applications.
FQD4P40TF-VB is a high voltage P-channel MOSFET in TO-252 package, designed for applications that handle high voltage loads. Its maximum drain-source voltage is -500V, capable of handling switching and control tasks in negative voltage environments. This MOSFET uses Plannar process technology, has high voltage resistance and stable performance, and is suitable for power management, protection circuits and other high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | 3900mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. Detailed parameter description
- **Package type**: TO-252
The TO-252 package is a surface mount package that provides good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single P-channel
As a P-channel MOSFET, the device is used to handle the switching and control of negative voltage loads.
- **Maximum drain-source voltage (VDS)**: -500V
The maximum drain-source voltage is -500V, which is suitable for applications in high voltage environments and can effectively handle high voltage loads.
- **Maximum gate-source voltage (VGS)**: ±20V
Supports gate-source voltage of ±20V, providing a large operating range and flexibility.
- **Threshold voltage (Vth)**: -3V
The turn-on voltage is -3V, which is suitable for applications with medium gate drive voltage to ensure stable switching performance.
- **On-resistance (RDS(ON))**:
- **4875mΩ @ VGS = 4.5V**
At 4.5V gate drive voltage, the on-resistance is 4875mΩ, suitable for switching applications with low current loads.
- **3900mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 3900mΩ, providing lower on-resistance for higher current applications.
- **Maximum drain current (ID)**: -2A
The maximum drain current is -2A, suitable for switching tasks with low current loads.
- **Technology**: Plannar process
Using Plannar process, it provides reliable high voltage tolerance and stable performance, suitable for high voltage applications.
- **Package type**: TO-252
The TO-252 package is a surface mount package that provides good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single P-channel
As a P-channel MOSFET, the device is used to handle the switching and control of negative voltage loads.
- **Maximum drain-source voltage (VDS)**: -500V
The maximum drain-source voltage is -500V, which is suitable for applications in high voltage environments and can effectively handle high voltage loads.
- **Maximum gate-source voltage (VGS)**: ±20V
Supports gate-source voltage of ±20V, providing a large operating range and flexibility.
- **Threshold voltage (Vth)**: -3V
The turn-on voltage is -3V, which is suitable for applications with medium gate drive voltage to ensure stable switching performance.
- **On-resistance (RDS(ON))**:
- **4875mΩ @ VGS = 4.5V**
At 4.5V gate drive voltage, the on-resistance is 4875mΩ, suitable for switching applications with low current loads.
- **3900mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 3900mΩ, providing lower on-resistance for higher current applications.
- **Maximum drain current (ID)**: -2A
The maximum drain current is -2A, suitable for switching tasks with low current loads.
- **Technology**: Plannar process
Using Plannar process, it provides reliable high voltage tolerance and stable performance, suitable for high voltage applications.
Domain and module applications：
3. Application fields and module description
1. **High voltage power switch**: FQD4P40TF-VB is suitable for switching applications in high voltage power management systems. Its 500V drain-source voltage capability enables it to handle high voltage inputs, making it suitable for use in high voltage power converters and power protection circuits to ensure efficient power control and protection.
2. **Power protection circuit**: In power protection circuits, this MOSFET can effectively handle the switching requirements of high voltage loads. Its high voltage tolerance and relatively high on-resistance make it suitable for use in applications such as overvoltage protection and overcurrent protection to protect electronic components from high voltage damage.
3. **Industrial control system**: In industrial control systems, FQD4P40TF-VB can be used for switching and regulating high voltage control signals. Its 500V withstand voltage capability and stable switching performance ensure reliable control in industrial automation equipment, such as motor drives, valve control, and sensor interfaces.
4. **LED drive circuit**: In LED drive applications, this MOSFET can be used for high voltage and low current switching tasks. Its high voltage isolation capability and low on-resistance make it suitable for switching and regulation in LED lamps, ensuring stable light control and high efficiency.
5. **HVAC system**: This MOSFET also performs well in applications in heating, ventilation and air conditioning (HVAC) systems. Its 500V withstand voltage capability and stable switching performance ensure the reliable operation of HVAC systems in high voltage environments, suitable for power management and control tasks in the system.
These application scenarios demonstrate the wide applicability of FQD4P40TF-VB in high voltage and low current environments, especially in applications that require high voltage handling and stable switching performance.
1. **High voltage power switch**: FQD4P40TF-VB is suitable for switching applications in high voltage power management systems. Its 500V drain-source voltage capability enables it to handle high voltage inputs, making it suitable for use in high voltage power converters and power protection circuits to ensure efficient power control and protection.
2. **Power protection circuit**: In power protection circuits, this MOSFET can effectively handle the switching requirements of high voltage loads. Its high voltage tolerance and relatively high on-resistance make it suitable for use in applications such as overvoltage protection and overcurrent protection to protect electronic components from high voltage damage.
3. **Industrial control system**: In industrial control systems, FQD4P40TF-VB can be used for switching and regulating high voltage control signals. Its 500V withstand voltage capability and stable switching performance ensure reliable control in industrial automation equipment, such as motor drives, valve control, and sensor interfaces.
4. **LED drive circuit**: In LED drive applications, this MOSFET can be used for high voltage and low current switching tasks. Its high voltage isolation capability and low on-resistance make it suitable for switching and regulation in LED lamps, ensuring stable light control and high efficiency.
5. **HVAC system**: This MOSFET also performs well in applications in heating, ventilation and air conditioning (HVAC) systems. Its 500V withstand voltage capability and stable switching performance ensure the reliable operation of HVAC systems in high voltage environments, suitable for power management and control tasks in the system.
These application scenarios demonstrate the wide applicability of FQD4P40TF-VB in high voltage and low current environments, especially in applications that require high voltage handling and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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