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FQD4P25-VB Product details
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Product Introduction
**FQD4P25-VB** is a high voltage P-Channel MOSFET in TO252 package, designed for applications requiring high voltage and medium current handling capability. Its drain-source voltage is up to -250V, enabling it to operate stably in high voltage reverse blocking situations. This MOSFET uses Trench technology and has a low on-resistance, making it suitable for use in power management and switching applications to provide efficient and reliable current control.
**FQD4P25-VB** is a high voltage P-Channel MOSFET in TO252 package, designed for applications requiring high voltage and medium current handling capability. Its drain-source voltage is up to -250V, enabling it to operate stably in high voltage reverse blocking situations. This MOSFET uses Trench technology and has a low on-resistance, making it suitable for use in power management and switching applications to provide efficient and reliable current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | 1000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Model**: FQD4P25-VB
- **Package**: TO252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -250V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -2V
- **On-Resistance (RDS(ON))**:
- 1200mΩ (VGS = 4.5V)
- 1000mΩ (VGS = 10V)
- **Maximum Drain Current (ID)**: -6A
- **Technology**: Trench
- **Model**: FQD4P25-VB
- **Package**: TO252
- **Configuration**: Single P-Channel
- **Drain-Source Voltage (VDS)**: -250V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: -2V
- **On-Resistance (RDS(ON))**:
- 1200mΩ (VGS = 4.5V)
- 1000mΩ (VGS = 10V)
- **Maximum Drain Current (ID)**: -6A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High voltage reverse protection**: FQD4P25-VB is suitable for high voltage reverse protection circuits, such as protection switches for preventing current reverse flow. This can effectively protect circuits and sensitive components from overvoltage or reverse voltage damage.
2. **Negative voltage power management**: In negative voltage power management systems, FQD4P25-VB is able to manage the switching operation of negative voltage as a switching element. Its high voltage tolerance ensures stability and reliability in negative voltage environments.
3. **Current control circuit**: This MOSFET is suitable for various circuits that require high voltage isolation and current control, such as current isolation switches and high voltage load switches. It can effectively manage current flow and provide reliable current control functions.
4. **Power electronic equipment**: In power electronic equipment, such as high voltage converters and inverters, FQD4P25-VB is able to provide stable switching functions. Its high voltage withstand capability and low on-resistance help improve device performance and reliability.
The FQD4P25-VB's high voltage withstand capability and low on-resistance enable it to excel in multiple applications requiring high voltage reverse blocking and current management, providing an efficient and reliable solution.
1. **High voltage reverse protection**: FQD4P25-VB is suitable for high voltage reverse protection circuits, such as protection switches for preventing current reverse flow. This can effectively protect circuits and sensitive components from overvoltage or reverse voltage damage.
2. **Negative voltage power management**: In negative voltage power management systems, FQD4P25-VB is able to manage the switching operation of negative voltage as a switching element. Its high voltage tolerance ensures stability and reliability in negative voltage environments.
3. **Current control circuit**: This MOSFET is suitable for various circuits that require high voltage isolation and current control, such as current isolation switches and high voltage load switches. It can effectively manage current flow and provide reliable current control functions.
4. **Power electronic equipment**: In power electronic equipment, such as high voltage converters and inverters, FQD4P25-VB is able to provide stable switching functions. Its high voltage withstand capability and low on-resistance help improve device performance and reliability.
The FQD4P25-VB's high voltage withstand capability and low on-resistance enable it to excel in multiple applications requiring high voltage reverse blocking and current management, providing an efficient and reliable solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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