中文
English
FQD4P25TM-VB Product details
Back to previous pageProduct introduction：
FQD4P25TM-VB MOSFET Product Introduction
FQD4P25TM-VB is a high voltage P-channel MOSFET in TO-252 package, designed for high voltage and high efficiency applications. This MOSFET has a drain-source voltage (VDS) of -250V, suitable for circuits that require high voltage resistance. The gate-source voltage (VGS) is ±20V, providing a wide control voltage range. Its threshold voltage (Vth) is -2V, which enables the MOSFET to be stably turned on under negative gate voltage. The FQD4P25TM-VB uses Trench technology, with an on-resistance (RDS(ON)) of 1000mΩ (at 10V gate voltage), and can carry a continuous drain current (ID) of -6A, suitable for high current switching applications.
FQD4P25TM-VB is a high voltage P-channel MOSFET in TO-252 package, designed for high voltage and high efficiency applications. This MOSFET has a drain-source voltage (VDS) of -250V, suitable for circuits that require high voltage resistance. The gate-source voltage (VGS) is ±20V, providing a wide control voltage range. Its threshold voltage (Vth) is -2V, which enables the MOSFET to be stably turned on under negative gate voltage. The FQD4P25TM-VB uses Trench technology, with an on-resistance (RDS(ON)) of 1000mΩ (at 10V gate voltage), and can carry a continuous drain current (ID) of -6A, suitable for high current switching applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | 1000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description of FQD4P25TM-VB
1. **Package**: TO-252
- This package type has good heat dissipation performance and is suitable for surface mounting, ensuring the stability of MOSFET in high-power applications.
2. **Configuration**: Single P-channel
- Single P-channel MOSFET, suitable for high-side switch and load switching applications.
3. **Drain-source voltage (VDS)**: -250V
- This value represents the maximum negative drain-to-source voltage that the MOSFET can withstand, suitable for high-voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and the source, providing a wide control range.
5. **Threshold voltage (Vth)**: -2V
- The minimum negative gate voltage required to turn on the MOSFET, suitable for negative gate drive circuits.
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
- 1200mΩ @ VGS=4.5V
- The on-resistance value of MOSFET at different gate voltages affects power consumption and efficiency.
7. **Continuous drain current (ID)**: -6A
- The maximum negative current that MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and high switching efficiency, which helps reduce power consumption.
1. **Package**: TO-252
- This package type has good heat dissipation performance and is suitable for surface mounting, ensuring the stability of MOSFET in high-power applications.
2. **Configuration**: Single P-channel
- Single P-channel MOSFET, suitable for high-side switch and load switching applications.
3. **Drain-source voltage (VDS)**: -250V
- This value represents the maximum negative drain-to-source voltage that the MOSFET can withstand, suitable for high-voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and the source, providing a wide control range.
5. **Threshold voltage (Vth)**: -2V
- The minimum negative gate voltage required to turn on the MOSFET, suitable for negative gate drive circuits.
6. **On-resistance (RDS(ON))**:
- 1000mΩ @ VGS=10V
- 1200mΩ @ VGS=4.5V
- The on-resistance value of MOSFET at different gate voltages affects power consumption and efficiency.
7. **Continuous drain current (ID)**: -6A
- The maximum negative current that MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using Trench technology, it provides low on-resistance and high switching efficiency, which helps reduce power consumption.
Domain and module applications：
Application Examples of FQD4P25TM-VB
FQD4P25TM-VB MOSFET is suitable for a variety of high voltage and high current applications due to its high voltage tolerance and stable switching performance. Here are some specific application examples:
1. **High Voltage Switch**: FQD4P25TM-VB is suitable for high voltage switching applications, such as high-side switches in power management systems. Its 250V VDS and low on-resistance enable it to reliably switch loads in high voltage environments.
2. **Battery Management System (BMS)**: In battery management systems, especially in applications that require control of high voltage battery packs, FQD4P25TM-VB can provide stable switching performance to protect the safe operation of batteries and circuits.
3. **Power Converter**: In high voltage DC-DC converters, FQD4P25TM-VB can be used for high-side switches to help achieve efficient voltage conversion. Its high voltage withstand characteristics ensure reliable operation at high voltages.
4. **Load switching**: In circuits that need to switch high-voltage loads, such as load switches in home appliances and industrial equipment, FQD4P25TM-VB can provide efficient and reliable switching functions to ensure system stability and safety.
FQD4P25TM-VB MOSFET, with its excellent high-voltage tolerance and low on-resistance, performs well in various applications requiring high voltage and high current control. Its Trench technology improves overall efficiency and is suitable for a variety of industrial and power application scenarios.
FQD4P25TM-VB MOSFET is suitable for a variety of high voltage and high current applications due to its high voltage tolerance and stable switching performance. Here are some specific application examples:
1. **High Voltage Switch**: FQD4P25TM-VB is suitable for high voltage switching applications, such as high-side switches in power management systems. Its 250V VDS and low on-resistance enable it to reliably switch loads in high voltage environments.
2. **Battery Management System (BMS)**: In battery management systems, especially in applications that require control of high voltage battery packs, FQD4P25TM-VB can provide stable switching performance to protect the safe operation of batteries and circuits.
3. **Power Converter**: In high voltage DC-DC converters, FQD4P25TM-VB can be used for high-side switches to help achieve efficient voltage conversion. Its high voltage withstand characteristics ensure reliable operation at high voltages.
4. **Load switching**: In circuits that need to switch high-voltage loads, such as load switches in home appliances and industrial equipment, FQD4P25TM-VB can provide efficient and reliable switching functions to ensure system stability and safety.
FQD4P25TM-VB MOSFET, with its excellent high-voltage tolerance and low on-resistance, performs well in various applications requiring high voltage and high current control. Its Trench technology improves overall efficiency and is suitable for a variety of industrial and power application scenarios.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
