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FQD4P25TF-VB Product details
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FQD4P25TF-VB MOSFET Overview
FQD4P25TF-VB is a high voltage single P-channel MOSFET in TO-252 package, designed for high voltage power management and switching applications. It uses advanced trench technology to optimize its electrical performance and efficiency. This MOSFET has high voltage tolerance and moderate on-resistance, suitable for stable switching operation in high voltage environment.
FQD4P25TF-VB is a high voltage single P-channel MOSFET in TO-252 package, designed for high voltage power management and switching applications. It uses advanced trench technology to optimize its electrical performance and efficiency. This MOSFET has high voltage tolerance and moderate on-resistance, suitable for stable switching operation in high voltage environment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | 1000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -250V | -2V | -6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -250V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):** 1200mΩ @ VGS = 4.5V
- **On-resistance (RDS(ON)):** 1000mΩ @ VGS = 10V
- **Drain current (ID):** -6A
- **Technology:** Trench technology
FQD4P25TF-VB adopts trench technology. This design can effectively reduce the on-resistance and improve the voltage tolerance, making it excel in high-voltage switching and power management applications.
- **Package:** TO-252
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -250V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -2V
- **On-resistance (RDS(ON)):** 1200mΩ @ VGS = 4.5V
- **On-resistance (RDS(ON)):** 1000mΩ @ VGS = 10V
- **Drain current (ID):** -6A
- **Technology:** Trench technology
FQD4P25TF-VB adopts trench technology. This design can effectively reduce the on-resistance and improve the voltage tolerance, making it excel in high-voltage switching and power management applications.
Domain and module applications：
Application Examples
**1. High-voltage power management: **
- FQD4P25TF-VB is particularly suitable for high-voltage power management systems, such as high-voltage power switches and power regulation modules. Its 250V drain-source voltage capability ensures stable operation in high-voltage environments, while moderate on-resistance helps improve system efficiency and reduce power loss.
**2. Motor control systems: **
- In motor drive applications that require high-voltage switching, the high drain-source voltage and negative drain current capabilities of this MOSFET enable it to provide stable switching performance for motor control systems, especially in industrial motors and motor drives under high-voltage environments.
**3. High-voltage DC-DC converters: **
- FQD4P25TF-VB is suitable for high-voltage DC-DC converter applications, such as high-voltage boost or buck converters. Its high voltage capability and low on-resistance help achieve efficient energy conversion in high-voltage environments, ensuring system stability and reliability.
**4. High-voltage LED drive circuit: **
- In high-voltage LED drive circuits, FQD4P25TF-VB can be used as a high-voltage switch, especially in LED lighting systems that require higher voltage and current control, it can provide stable switching performance and efficient current management to ensure the long-term stability of the LED system.
**5. Inverter application: **
- For high-voltage inverter circuits (such as solar inverters or uninterruptible power supplies (UPS)), the high voltage tolerance and high current capability of this MOSFET enable it to handle high voltage inputs and provide reliable switching performance, improving the overall efficiency of the inverter and system stability.
**1. High-voltage power management: **
- FQD4P25TF-VB is particularly suitable for high-voltage power management systems, such as high-voltage power switches and power regulation modules. Its 250V drain-source voltage capability ensures stable operation in high-voltage environments, while moderate on-resistance helps improve system efficiency and reduce power loss.
**2. Motor control systems: **
- In motor drive applications that require high-voltage switching, the high drain-source voltage and negative drain current capabilities of this MOSFET enable it to provide stable switching performance for motor control systems, especially in industrial motors and motor drives under high-voltage environments.
**3. High-voltage DC-DC converters: **
- FQD4P25TF-VB is suitable for high-voltage DC-DC converter applications, such as high-voltage boost or buck converters. Its high voltage capability and low on-resistance help achieve efficient energy conversion in high-voltage environments, ensuring system stability and reliability.
**4. High-voltage LED drive circuit: **
- In high-voltage LED drive circuits, FQD4P25TF-VB can be used as a high-voltage switch, especially in LED lighting systems that require higher voltage and current control, it can provide stable switching performance and efficient current management to ensure the long-term stability of the LED system.
**5. Inverter application: **
- For high-voltage inverter circuits (such as solar inverters or uninterruptible power supplies (UPS)), the high voltage tolerance and high current capability of this MOSFET enable it to handle high voltage inputs and provide reliable switching performance, improving the overall efficiency of the inverter and system stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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