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FQD4N20-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
FQD4N20-VB is a high-performance N-type MOSFET in TO252 package, designed for medium and high voltage applications. The MOSFET supports drain-source voltage (VDS) up to 200V and can handle a maximum drain current of 5A. Its threshold voltage (Vth) is 3V, ensuring reliable turn-on at appropriate gate-source voltage. Manufactured using Trench technology, FQD4N20-VB provides a lower on-resistance (RDS(ON)=850mΩ@VGS=10V), suitable for application scenarios that require medium voltage handling and efficient switching performance.
FQD4N20-VB is a high-performance N-type MOSFET in TO252 package, designed for medium and high voltage applications. The MOSFET supports drain-source voltage (VDS) up to 200V and can handle a maximum drain current of 5A. Its threshold voltage (Vth) is 3V, ensuring reliable turn-on at appropriate gate-source voltage. Manufactured using Trench technology, FQD4N20-VB provides a lower on-resistance (RDS(ON)=850mΩ@VGS=10V), suitable for application scenarios that require medium voltage handling and efficient switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 850mΩ@VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: Trench
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 850mΩ@VGS=10V
- **Maximum drain current (ID)**: 5A
- **Technology**: Trench
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
Domain and module applications：
3. Application fields and modules
The medium-to-high voltage handling capability and efficient switching performance of the FQD4N20-VB MOSFET make it very suitable for use in multiple fields and modules, including:
1. **Power management**: In high-voltage DC-DC converters and switching power supplies, the FQD4N20-VB is able to handle voltages up to 200V and provide effective switching functions to ensure efficient and stable operation of the power system.
2. **Load switching**: Suitable for scenarios requiring medium-voltage load switching, such as industrial equipment and power switch control. Its low on-resistance and high current handling capability enable it to reliably control load switching.
3. **Motor drive**: In motor drive applications, the FQD4N20-VB can be used to control medium to high voltage motor drive circuits to ensure stable operation of the motor under high load conditions.
4. **Power Inverter**: In power inverters and frequency converters, this MOSFET can be used for high voltage and medium current switching operations, improving the performance and efficiency of the inverter, and is widely used in renewable energy systems and power control systems.
In summary, the FQD4N20-VB MOSFET, with its high voltage tolerance and efficient switching performance, is very suitable for power management, load switching, motor drive, power inverter and other application scenarios that require reliable performance and high voltage processing.
The medium-to-high voltage handling capability and efficient switching performance of the FQD4N20-VB MOSFET make it very suitable for use in multiple fields and modules, including:
1. **Power management**: In high-voltage DC-DC converters and switching power supplies, the FQD4N20-VB is able to handle voltages up to 200V and provide effective switching functions to ensure efficient and stable operation of the power system.
2. **Load switching**: Suitable for scenarios requiring medium-voltage load switching, such as industrial equipment and power switch control. Its low on-resistance and high current handling capability enable it to reliably control load switching.
3. **Motor drive**: In motor drive applications, the FQD4N20-VB can be used to control medium to high voltage motor drive circuits to ensure stable operation of the motor under high load conditions.
4. **Power Inverter**: In power inverters and frequency converters, this MOSFET can be used for high voltage and medium current switching operations, improving the performance and efficiency of the inverter, and is widely used in renewable energy systems and power control systems.
In summary, the FQD4N20-VB MOSFET, with its high voltage tolerance and efficient switching performance, is very suitable for power management, load switching, motor drive, power inverter and other application scenarios that require reliable performance and high voltage processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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