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FQD4N20TM-VB Product details
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FQD4N20TM-VB Product Introduction
FQD4N20TM-VB is a single N-channel power MOSFET in a TO252 package designed for medium voltage applications. The device has a drain-source voltage (VDS) of 200V and supports a gate-source voltage (VGS) of ±20V. Its typical turn-on voltage is 3V and its on-resistance is 850mΩ at VGS=10V. The FQD4N20TM-VB has a maximum drain current of 5A and uses Trench technology, making it suitable for switching applications requiring medium current and voltage, such as power management and power conversion modules.
FQD4N20TM-VB is a single N-channel power MOSFET in a TO252 package designed for medium voltage applications. The device has a drain-source voltage (VDS) of 200V and supports a gate-source voltage (VGS) of ±20V. Its typical turn-on voltage is 3V and its on-resistance is 850mΩ at VGS=10V. The FQD4N20TM-VB has a maximum drain current of 5A and uses Trench technology, making it suitable for switching applications requiring medium current and voltage, such as power management and power conversion modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FQD4N20TM-VB Detailed parameter description
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, with good heat dissipation and compact design, suitable for a variety of electronic applications.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD4N20TM-VB is suitable for low-side switching applications and effectively controls the flow of current.
3. **Drain-source voltage (VDS)**: 200V
The maximum drain-source voltage of this MOSFET is 200V, which is suitable for switching control in medium voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltages up to ±20V to ensure stability and reliability under various operating conditions.
5. **Turning point voltage (Vth)**: 3V
The typical turning-on voltage is 3V, which enables the MOSFET to be effectively turned on at a lower gate voltage, improving the switching efficiency.
6. **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
When VGS=10V, the on-resistance is 850mΩ, which is suitable for switching applications that require medium on-resistance.
7. **Drain current (ID)**: 5A
The maximum drain current is 5A, which is suitable for medium current switching applications.
8. **Technology**: Trench
Using Trench technology, it provides lower on-resistance and good switching performance, suitable for medium voltage applications.
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, with good heat dissipation and compact design, suitable for a variety of electronic applications.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD4N20TM-VB is suitable for low-side switching applications and effectively controls the flow of current.
3. **Drain-source voltage (VDS)**: 200V
The maximum drain-source voltage of this MOSFET is 200V, which is suitable for switching control in medium voltage environments.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltages up to ±20V to ensure stability and reliability under various operating conditions.
5. **Turning point voltage (Vth)**: 3V
The typical turning-on voltage is 3V, which enables the MOSFET to be effectively turned on at a lower gate voltage, improving the switching efficiency.
6. **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
When VGS=10V, the on-resistance is 850mΩ, which is suitable for switching applications that require medium on-resistance.
7. **Drain current (ID)**: 5A
The maximum drain current is 5A, which is suitable for medium current switching applications.
8. **Technology**: Trench
Using Trench technology, it provides lower on-resistance and good switching performance, suitable for medium voltage applications.
Domain and module applications：
Application fields and module examples
1. **Medium voltage switching power supply**:
FQD4N20TM-VB can be used as the main switching device in medium voltage switching power supply for power switch control. Its 200V drain-source voltage enables it to work stably in a moderate voltage environment, making it very suitable for power conversion and regulation modules.
2. **Power converter**:
In power converter applications, such as DC-DC converters or AC-DC converters, FQD4N20TM-VB can be used as a switching controller to manage the power conversion process and improve the overall efficiency of the system.
3. **Motor drive**:
This MOSFET is suitable for medium voltage motor drive systems, optimizing the operation and performance of the motor by providing stable switching control, especially in applications where motor start and stop control is required.
4. **Lighting control system**:
FQD4N20TM-VB can be used in medium voltage lighting systems, such as LED drivers or commercial lighting equipment, as a switch device to control the switch state and brightness adjustment of lamps to ensure the stability and efficiency of the system.
5. **Home appliance power management**:
In the power management system of home appliances, such as refrigerators, air conditioners, etc., FQD4N20TM-VB can be used as a switch control device to manage the switch state and current flow of the power supply to ensure the normal operation and safety of the equipment.
These application examples show the wide applicability of FQD4N20TM-VB in medium voltage switch control and power conversion, especially in systems that require medium current and voltage processing.
1. **Medium voltage switching power supply**:
FQD4N20TM-VB can be used as the main switching device in medium voltage switching power supply for power switch control. Its 200V drain-source voltage enables it to work stably in a moderate voltage environment, making it very suitable for power conversion and regulation modules.
2. **Power converter**:
In power converter applications, such as DC-DC converters or AC-DC converters, FQD4N20TM-VB can be used as a switching controller to manage the power conversion process and improve the overall efficiency of the system.
3. **Motor drive**:
This MOSFET is suitable for medium voltage motor drive systems, optimizing the operation and performance of the motor by providing stable switching control, especially in applications where motor start and stop control is required.
4. **Lighting control system**:
FQD4N20TM-VB can be used in medium voltage lighting systems, such as LED drivers or commercial lighting equipment, as a switch device to control the switch state and brightness adjustment of lamps to ensure the stability and efficiency of the system.
5. **Home appliance power management**:
In the power management system of home appliances, such as refrigerators, air conditioners, etc., FQD4N20TM-VB can be used as a switch control device to manage the switch state and current flow of the power supply to ensure the normal operation and safety of the equipment.
These application examples show the wide applicability of FQD4N20TM-VB in medium voltage switch control and power conversion, especially in systems that require medium current and voltage processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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