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FQD4N20TF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
FQD4N20TF-VB is a high voltage N-channel MOSFET in TO-252 package, designed for applications that require high voltage handling. Its maximum drain-source voltage is 200V, supports higher gate-source voltage, and has good switching performance and stability. Using Trench process technology, this MOSFET provides a lower on-resistance and is suitable for medium current and high voltage scenarios such as power management, switching circuits, and industrial control.
FQD4N20TF-VB is a high voltage N-channel MOSFET in TO-252 package, designed for applications that require high voltage handling. Its maximum drain-source voltage is 200V, supports higher gate-source voltage, and has good switching performance and stability. Using Trench process technology, this MOSFET provides a lower on-resistance and is suitable for medium current and high voltage scenarios such as power management, switching circuits, and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO-252
The TO-252 package is a surface mount package with good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle the switching and control of positive voltage loads.
- **Maximum drain-source voltage (VDS)**: 200V
The maximum drain-source voltage is 200V, suitable for medium voltage environments and capable of handling higher voltage switching requirements.
- **Maximum gate-source voltage (VGS)**: ±20V
Supports gate-source voltages of ±20V, providing a large operating range and design flexibility.
- **Threshold voltage (Vth)**: 3V
The turn-on voltage is 3V, suitable for applications with medium gate drive voltages, ensuring stable switching performance.
- **On-resistance (RDS(ON))**:
- **850mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 850mΩ, suitable for switching applications with medium current loads.
- **Maximum drain current (ID)**: 5A
The maximum drain current is 5A, suitable for switching needs to handle medium current loads.
- **Technology**: Trench process
Using the Trench process, it provides low on-resistance and excellent switching performance, suitable for applications requiring high efficiency and high current handling.
- **Package type**: TO-252
The TO-252 package is a surface mount package with good heat dissipation and mechanical strength, suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle the switching and control of positive voltage loads.
- **Maximum drain-source voltage (VDS)**: 200V
The maximum drain-source voltage is 200V, suitable for medium voltage environments and capable of handling higher voltage switching requirements.
- **Maximum gate-source voltage (VGS)**: ±20V
Supports gate-source voltages of ±20V, providing a large operating range and design flexibility.
- **Threshold voltage (Vth)**: 3V
The turn-on voltage is 3V, suitable for applications with medium gate drive voltages, ensuring stable switching performance.
- **On-resistance (RDS(ON))**:
- **850mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 850mΩ, suitable for switching applications with medium current loads.
- **Maximum drain current (ID)**: 5A
The maximum drain current is 5A, suitable for switching needs to handle medium current loads.
- **Technology**: Trench process
Using the Trench process, it provides low on-resistance and excellent switching performance, suitable for applications requiring high efficiency and high current handling.
Domain and module applications：
3. Application fields and module description
1. **Power management**: FQD4N20TF-VB is suitable for switching and regulation applications in power management systems. Its 200V drain-source voltage capability enables it to work stably in high voltage environments, and is suitable for use in power converters and power protection circuits to achieve efficient current control and voltage regulation.
2. **Switching circuit**: This MOSFET can be used in various switching circuits, especially in scenarios with medium current and high voltage loads. Its low on-resistance and high drain current capability make it suitable for switching applications such as motor control and lighting adjustment, providing reliable switching performance and high efficiency.
3. **Industrial control**: In industrial control systems, FQD4N20TF-VB can be used for switching and regulating high voltage control signals. Its 200V withstand voltage capability and stable switching performance ensure reliable control in industrial automation equipment, including motor drives, valve control, and sensor interfaces.
4. **LED driver**: In LED driver circuits, this MOSFET can be used for high voltage and medium current switching applications. Its low on-resistance and high current handling capability make it suitable for switching and regulation in LED lighting systems, ensuring stable operation and high efficiency of LED lamps.
5. **Power converter**: FQD4N20TF-VB is also suitable for switching applications in power converters, such as DC-DC converters and AC-DC power supplies. Its 200V drain-source voltage and low on-resistance enable it to provide efficient current control and energy conversion during power conversion, making it suitable for use in power systems of various electronic devices.
These applications demonstrate the wide applicability and high efficiency of FQD4N20TF-VB in medium current and high voltage environments, and are particularly suitable for use in applications that require stable switching and high voltage handling.
1. **Power management**: FQD4N20TF-VB is suitable for switching and regulation applications in power management systems. Its 200V drain-source voltage capability enables it to work stably in high voltage environments, and is suitable for use in power converters and power protection circuits to achieve efficient current control and voltage regulation.
2. **Switching circuit**: This MOSFET can be used in various switching circuits, especially in scenarios with medium current and high voltage loads. Its low on-resistance and high drain current capability make it suitable for switching applications such as motor control and lighting adjustment, providing reliable switching performance and high efficiency.
3. **Industrial control**: In industrial control systems, FQD4N20TF-VB can be used for switching and regulating high voltage control signals. Its 200V withstand voltage capability and stable switching performance ensure reliable control in industrial automation equipment, including motor drives, valve control, and sensor interfaces.
4. **LED driver**: In LED driver circuits, this MOSFET can be used for high voltage and medium current switching applications. Its low on-resistance and high current handling capability make it suitable for switching and regulation in LED lighting systems, ensuring stable operation and high efficiency of LED lamps.
5. **Power converter**: FQD4N20TF-VB is also suitable for switching applications in power converters, such as DC-DC converters and AC-DC power supplies. Its 200V drain-source voltage and low on-resistance enable it to provide efficient current control and energy conversion during power conversion, making it suitable for use in power systems of various electronic devices.
These applications demonstrate the wide applicability and high efficiency of FQD4N20TF-VB in medium current and high voltage environments, and are particularly suitable for use in applications that require stable switching and high voltage handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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