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FQD4N20LTF-VB Product details
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FQD4N20LTF-VB MOSFET Product Introduction
FQD4N20LTF-VB is a high-performance single N-channel MOSFET in a TO-252 package, designed for medium and high voltage switching and power management applications. This MOSFET has a drain-source voltage (VDS) of 200V, suitable for use in medium voltage environments. The gate-source voltage (VGS) is ±20V, providing a flexible control voltage range. The threshold voltage (Vth) is 3V, which ensures the stable switching capability of the MOSFET at a lower gate voltage. The FQD4N20LTF-VB uses Trench technology, and the on-resistance (RDS(ON)) at a gate voltage of 10V is 850mΩ, which helps to reduce power consumption and improve efficiency. It is capable of carrying a continuous drain current (ID) of 5A, suitable for medium current applications.
FQD4N20LTF-VB is a high-performance single N-channel MOSFET in a TO-252 package, designed for medium and high voltage switching and power management applications. This MOSFET has a drain-source voltage (VDS) of 200V, suitable for use in medium voltage environments. The gate-source voltage (VGS) is ±20V, providing a flexible control voltage range. The threshold voltage (Vth) is 3V, which ensures the stable switching capability of the MOSFET at a lower gate voltage. The FQD4N20LTF-VB uses Trench technology, and the on-resistance (RDS(ON)) at a gate voltage of 10V is 850mΩ, which helps to reduce power consumption and improve efficiency. It is capable of carrying a continuous drain current (ID) of 5A, suitable for medium current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of FQD4N20LTF-VB
1. **Package**: TO-252
- Compact and has good heat dissipation performance, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high-side or low-side switch applications.
3. **Drain-Source Voltage (VDS)**: 200V
- The maximum drain-to-source voltage that can be tolerated, suitable for medium voltage applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and the source, providing a wide range of control voltages.
5. **Threshold Voltage (Vth)**: 3V
- The minimum gate voltage required to turn on the MOSFET, ensuring stable operation of the MOSFET under common gate drive conditions.
6. **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- The drain-to-source resistance of the MOSFET when it is fully turned on at a gate voltage of 10V, affecting power loss and efficiency.
7. **Continuous drain current (ID)**: 5A
- The maximum current that a MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using Trench technology, it has low on-resistance and high switching efficiency, reducing power consumption and improving overall performance.
1. **Package**: TO-252
- Compact and has good heat dissipation performance, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high-side or low-side switch applications.
3. **Drain-Source Voltage (VDS)**: 200V
- The maximum drain-to-source voltage that can be tolerated, suitable for medium voltage applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and the source, providing a wide range of control voltages.
5. **Threshold Voltage (Vth)**: 3V
- The minimum gate voltage required to turn on the MOSFET, ensuring stable operation of the MOSFET under common gate drive conditions.
6. **On-resistance (RDS(ON))**: 850mΩ @ VGS=10V
- The drain-to-source resistance of the MOSFET when it is fully turned on at a gate voltage of 10V, affecting power loss and efficiency.
7. **Continuous drain current (ID)**: 5A
- The maximum current that a MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using Trench technology, it has low on-resistance and high switching efficiency, reducing power consumption and improving overall performance.
Domain and module applications：
Application Examples of FQD4N20LTF-VB
The design features of FQD4N20LTF-VB MOSFET make it suitable for a variety of medium-to-high voltage and medium-current applications. Here are some specific application examples:
1. **Power Management**: FQD4N20LTF-VB is suitable for power management systems such as DC-DC converters and switching power supplies. Its 200V VDS and 850mΩ RDS(ON) are suitable for use in power modules that require efficient power conversion and control, which can effectively reduce power consumption.
2. **Motor Drive**: In motor drive circuits, FQD4N20LTF-VB can be used to drive DC motors and stepper motors. Its 5A current handling capability and stable switching characteristics make it suitable for starting, running and regulating motors.
3. **LED Drive**: In LED lighting systems, FQD4N20LTF-VB can be used in efficient LED drive circuits. Its lower on-resistance helps reduce power consumption and improve the overall efficiency and life of the LED system.
4. **Battery Management System (BMS)**: In battery management systems, especially for battery protection and balancing circuits, the FQD4N20LTF-VB is able to handle medium currents and provide stable switching control to ensure safe and reliable operation of the battery pack.
With its high voltage tolerance and low on-resistance, the FQD4N20LTF-VB MOSFET provides stable switching performance and efficient power management for medium and high voltage applications. Its Trench technology improves power density and efficiency, making it an excellent performer in a variety of applications.
The design features of FQD4N20LTF-VB MOSFET make it suitable for a variety of medium-to-high voltage and medium-current applications. Here are some specific application examples:
1. **Power Management**: FQD4N20LTF-VB is suitable for power management systems such as DC-DC converters and switching power supplies. Its 200V VDS and 850mΩ RDS(ON) are suitable for use in power modules that require efficient power conversion and control, which can effectively reduce power consumption.
2. **Motor Drive**: In motor drive circuits, FQD4N20LTF-VB can be used to drive DC motors and stepper motors. Its 5A current handling capability and stable switching characteristics make it suitable for starting, running and regulating motors.
3. **LED Drive**: In LED lighting systems, FQD4N20LTF-VB can be used in efficient LED drive circuits. Its lower on-resistance helps reduce power consumption and improve the overall efficiency and life of the LED system.
4. **Battery Management System (BMS)**: In battery management systems, especially for battery protection and balancing circuits, the FQD4N20LTF-VB is able to handle medium currents and provide stable switching control to ensure safe and reliable operation of the battery pack.
With its high voltage tolerance and low on-resistance, the FQD4N20LTF-VB MOSFET provides stable switching performance and efficient power management for medium and high voltage applications. Its Trench technology improves power density and efficiency, making it an excellent performer in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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