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FQD3P50TM-VB Product details
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FQD3P50TM-VB MOSFET Product Introduction
**FQD3P50TM-VB** is a high voltage single tube P-type MOSFET, packaged in TO-252, manufactured using Plannar technology. This MOSFET has a drain-source voltage (VDS) tolerance of up to -500V and a gate-source voltage (VGS) range of ±20V, suitable for high voltage switching applications. Its threshold voltage (Vth) is -3V, and the on-resistance (RDS(ON)) is 3900mΩ at VGS = 10V, and 4875mΩ at VGS = 4.5V. The maximum drain current (ID) is -2A, suitable for circuit designs requiring high voltage and medium current.
**FQD3P50TM-VB** is a high voltage single tube P-type MOSFET, packaged in TO-252, manufactured using Plannar technology. This MOSFET has a drain-source voltage (VDS) tolerance of up to -500V and a gate-source voltage (VGS) range of ±20V, suitable for high voltage switching applications. Its threshold voltage (Vth) is -3V, and the on-resistance (RDS(ON)) is 3900mΩ at VGS = 10V, and 4875mΩ at VGS = 4.5V. The maximum drain current (ID) is -2A, suitable for circuit designs requiring high voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | 3900mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO-252
- **Configuration**: Single tube P type
- **VDS (drain-source voltage)**: -500V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -3V
- **RDS(ON) (on-resistance)**:
- 4875mΩ @ VGS = 4.5V
- 3900mΩ @ VGS = 10V
- **ID (continuous leakage current)**: -2A
- **Technology**: Plannar
- **Package**: TO-252
- **Configuration**: Single tube P type
- **VDS (drain-source voltage)**: -500V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -3V
- **RDS(ON) (on-resistance)**:
- 4875mΩ @ VGS = 4.5V
- 3900mΩ @ VGS = 10V
- **ID (continuous leakage current)**: -2A
- **Technology**: Plannar
Domain and module applications：
Application Examples
The high voltage and medium current characteristics of the **FQD3P50TM-VB** MOSFET make it suitable for multiple fields and modules. The specific applications are as follows:
1. **High Voltage Switching Power Supply**: In a high voltage switching mode power supply (SMPS), the FQD3P50TM-VB can handle voltages up to -500V as a switching element, suitable for current switching and control in high voltage power supply systems.
2. **Battery Protection Circuit**: In a high voltage battery protection circuit, the FQD3P50TM-VB can be used for the protection and control of high voltage battery packs to ensure safe charging and discharging operations of the battery.
3. **Industrial Load Switch**: This MOSFET is suitable for high voltage load switching in industrial equipment, such as load switches in motor control systems, and is capable of handling switching operations of high voltage loads.
4. **Inverter and Power Conversion**: In inverter modules such as solar inverters, the FQD3P50TM-VB can handle high voltage switching operations, ensuring efficient power conversion and stable output.
These applications demonstrate the wide applicability and reliability of the FQD3P50TM-VB in high voltage switching and control applications.
The high voltage and medium current characteristics of the **FQD3P50TM-VB** MOSFET make it suitable for multiple fields and modules. The specific applications are as follows:
1. **High Voltage Switching Power Supply**: In a high voltage switching mode power supply (SMPS), the FQD3P50TM-VB can handle voltages up to -500V as a switching element, suitable for current switching and control in high voltage power supply systems.
2. **Battery Protection Circuit**: In a high voltage battery protection circuit, the FQD3P50TM-VB can be used for the protection and control of high voltage battery packs to ensure safe charging and discharging operations of the battery.
3. **Industrial Load Switch**: This MOSFET is suitable for high voltage load switching in industrial equipment, such as load switches in motor control systems, and is capable of handling switching operations of high voltage loads.
4. **Inverter and Power Conversion**: In inverter modules such as solar inverters, the FQD3P50TM-VB can handle high voltage switching operations, ensuring efficient power conversion and stable output.
These applications demonstrate the wide applicability and reliability of the FQD3P50TM-VB in high voltage switching and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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