FQD3P20TM-VB Product details
Product introduction:
FQD3P20TM-VB is a single-channel P-type MOSFET in TO252 package, designed for high-voltage applications. The MOSFET supports a maximum drain-source voltage (VDS) of -200V and can handle a maximum drain current of -3.6A. Its threshold voltage (Vth) is -2.5V, allowing it to be turned on reliably at appropriate gate-source voltages. Manufactured using Trench technology, the FQD3P20TM-VB provides high switching performance and low on-resistance (RDS(ON)=1160mΩ@VGS=10V), suitable for applications that require high voltage handling and stable performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | 1160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Package type**: TO252
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1392mΩ@VGS=4.5V
- 1160mΩ@VGS=10V
- **Maximum drain current (ID)**: -3.6A
- **Technology**: Trench (trench technology)
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
Domain and module applications:
The high voltage and stable performance of FQD3P20TM-VB MOSFET make it very suitable for many fields and modules, including:
1. **High voltage power management**: In high voltage DC-DC converters and switching power supplies, this MOSFET provides high voltage tolerance and reliable switching performance, suitable for high voltage input power management, ensuring stable system operation.
2. **Load switch**: In application scenarios that require high voltage load switching, such as industrial equipment and power switch control, FQD3P20TM-VB can effectively switch high voltage loads and provide stable switching functions.
3. **Battery protection**: Suitable for protection circuits in high voltage battery packs, the high voltage tolerance and low on-resistance of FQD3P20TM-VB can effectively prevent overcharging and over-discharging, protecting the safety of the battery pack.
4. **Inverter circuit**: In photovoltaic inverters and uninterruptible power supplies (UPS), FQD3P20TM-VB can be used as a high-voltage switching element to handle high voltage and current conversion to ensure reliable operation of the inverter.
In general, FQD3P20TM-VB MOSFET, with its high voltage handling capability and stable switching characteristics, is very suitable for applications requiring high breakdown voltage and reliability such as high-voltage power management, load switching, battery protection and inverter circuits.
Technical support:
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