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FQD3P20TM-VB Product details

Product introduction:

1. Product Introduction

FQD3P20TM-VB is a single-channel P-type MOSFET in TO252 package, designed for high-voltage applications. The MOSFET supports a maximum drain-source voltage (VDS) of -200V and can handle a maximum drain current of -3.6A. Its threshold voltage (Vth) is -2.5V, allowing it to be turned on reliably at appropriate gate-source voltages. Manufactured using Trench technology, the FQD3P20TM-VB provides high switching performance and low on-resistance (RDS(ON)=1160mΩ@VGS=10V), suitable for applications that require high voltage handling and stable performance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -200V -2.5V -3.6A 1160mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -200V -2.5V -3.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -200V -2.5V -3.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
2. Detailed parameter description

- **Package type**: TO252
- **Configuration**: Single channel P type
- **Drain-source voltage (VDS)**: -200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2.5V
- **On-resistance (RDS(ON))**:
- 1392mΩ@VGS=4.5V
- 1160mΩ@VGS=10V
- **Maximum drain current (ID)**: -3.6A
- **Technology**: Trench (trench technology)
- **Package size**: TO252 package is usually 6.60mm x 8.60mm

Domain and module applications:

3. Application fields and modules

The high voltage and stable performance of FQD3P20TM-VB MOSFET make it very suitable for many fields and modules, including:

1. **High voltage power management**: In high voltage DC-DC converters and switching power supplies, this MOSFET provides high voltage tolerance and reliable switching performance, suitable for high voltage input power management, ensuring stable system operation.

2. **Load switch**: In application scenarios that require high voltage load switching, such as industrial equipment and power switch control, FQD3P20TM-VB can effectively switch high voltage loads and provide stable switching functions.

3. **Battery protection**: Suitable for protection circuits in high voltage battery packs, the high voltage tolerance and low on-resistance of FQD3P20TM-VB can effectively prevent overcharging and over-discharging, protecting the safety of the battery pack.

4. **Inverter circuit**: In photovoltaic inverters and uninterruptible power supplies (UPS), FQD3P20TM-VB can be used as a high-voltage switching element to handle high voltage and current conversion to ensure reliable operation of the inverter.

In general, FQD3P20TM-VB MOSFET, with its high voltage handling capability and stable switching characteristics, is very suitable for applications requiring high breakdown voltage and reliability such as high-voltage power management, load switching, battery protection and inverter circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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