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FQD3N50CTF-VB Product details
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FQD3N50CTF-VB Product Introduction
FQD3N50CTF-VB is a single N-channel power MOSFET in a TO252 package designed for high voltage applications. The device has a drain-source voltage (VDS) of 650V and supports a gate-source voltage (VGS) of ±30V. Its typical turn-on voltage is 3.5V, and its on-resistance is 2750mΩ at VGS=4.5V and 2200mΩ at VGS=10V. The FQD3N50CTF-VB has a maximum drain current of 4A and uses planar process technology, making it suitable for switching applications requiring medium current and high voltage, such as power management, power conversion, and high-voltage control modules.
FQD3N50CTF-VB is a single N-channel power MOSFET in a TO252 package designed for high voltage applications. The device has a drain-source voltage (VDS) of 650V and supports a gate-source voltage (VGS) of ±30V. Its typical turn-on voltage is 3.5V, and its on-resistance is 2750mΩ at VGS=4.5V and 2200mΩ at VGS=10V. The FQD3N50CTF-VB has a maximum drain current of 4A and uses planar process technology, making it suitable for switching applications requiring medium current and high voltage, such as power management, power conversion, and high-voltage control modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FQD3N50CTF-VB Detailed parameter description
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, with good heat dissipation and compact design, suitable for a variety of electronic devices.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD3N50CTF-VB is suitable for low-side switching applications and effectively controls the flow of current.
3. **Drain-source voltage (VDS)**: 650V
The maximum drain-source voltage of this MOSFET is 650V, which can work stably in a high voltage environment.
4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltages up to ±30V to ensure stability and reliability under various operating conditions.
5. **Throw-on voltage (Vth)**: 3.5V
The typical turn-on voltage is 3.5V, which allows the MOSFET to be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS=4.5V
- 2200mΩ @ VGS=10V
At VGS=10V, the on-resistance is 2200mΩ, which is relatively low and suitable for high-voltage applications requiring medium current.
7. **Drain current (ID)**: 4A
The maximum drain current is 4A, which is suitable for medium current switching applications.
8. **Technology**: Planar technology (Plannar)
The planar technology is used, which is suitable for high voltage applications, providing stable switching performance and good voltage resistance.
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, with good heat dissipation and compact design, suitable for a variety of electronic devices.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD3N50CTF-VB is suitable for low-side switching applications and effectively controls the flow of current.
3. **Drain-source voltage (VDS)**: 650V
The maximum drain-source voltage of this MOSFET is 650V, which can work stably in a high voltage environment.
4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltages up to ±30V to ensure stability and reliability under various operating conditions.
5. **Throw-on voltage (Vth)**: 3.5V
The typical turn-on voltage is 3.5V, which allows the MOSFET to be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**:
- 2750mΩ @ VGS=4.5V
- 2200mΩ @ VGS=10V
At VGS=10V, the on-resistance is 2200mΩ, which is relatively low and suitable for high-voltage applications requiring medium current.
7. **Drain current (ID)**: 4A
The maximum drain current is 4A, which is suitable for medium current switching applications.
8. **Technology**: Planar technology (Plannar)
The planar technology is used, which is suitable for high voltage applications, providing stable switching performance and good voltage resistance.
Domain and module applications：
Application fields and module examples
1. **High-voltage switching power supply**:
FQD3N50CTF-VB can be used as the main switching device in the high-voltage switching power supply to handle the switching control of the power supply. Its 650V drain-source voltage enables it to work stably in a high-voltage environment, making it very suitable for power conversion and regulation modules.
2. **Power converter**:
In power converter applications, such as AC-DC converters or DC-DC converters, FQD3N50CTF-VB can be used as a switching controller to manage the power conversion process and improve the overall efficiency of the system.
3. **Lighting control system**:
This MOSFET can be used in high-voltage lighting systems, such as commercial lighting or industrial lighting equipment, as a switching device to control the switching state and brightness adjustment of lamps, ensuring stable and efficient lighting control.
4. **Battery Management System**:
In battery management systems that require high voltage handling, the FQD3N50CTF-VB can be used as a switch controller to manage the battery charge and discharge process to ensure the safety and reliability of the system.
5. **Industrial Motor Drive**:
The device is suitable for industrial motor drives, such as high-voltage motor control systems, to optimize the operation and performance of the motor by providing stable switch control.
These application examples demonstrate the wide applicability of the FQD3N50CTF-VB in high-voltage switch control and power conversion, especially in systems requiring medium current and high voltage withstand capabilities.
1. **High-voltage switching power supply**:
FQD3N50CTF-VB can be used as the main switching device in the high-voltage switching power supply to handle the switching control of the power supply. Its 650V drain-source voltage enables it to work stably in a high-voltage environment, making it very suitable for power conversion and regulation modules.
2. **Power converter**:
In power converter applications, such as AC-DC converters or DC-DC converters, FQD3N50CTF-VB can be used as a switching controller to manage the power conversion process and improve the overall efficiency of the system.
3. **Lighting control system**:
This MOSFET can be used in high-voltage lighting systems, such as commercial lighting or industrial lighting equipment, as a switching device to control the switching state and brightness adjustment of lamps, ensuring stable and efficient lighting control.
4. **Battery Management System**:
In battery management systems that require high voltage handling, the FQD3N50CTF-VB can be used as a switch controller to manage the battery charge and discharge process to ensure the safety and reliability of the system.
5. **Industrial Motor Drive**:
The device is suitable for industrial motor drives, such as high-voltage motor control systems, to optimize the operation and performance of the motor by providing stable switch control.
These application examples demonstrate the wide applicability of the FQD3N50CTF-VB in high-voltage switch control and power conversion, especially in systems requiring medium current and high voltage withstand capabilities.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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