中文
English
FQD2P40-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
FQD2P40-VB is a high voltage P-channel MOSFET in TO-252 package, designed for high voltage and low current applications. Its maximum drain-source voltage is -500V, suitable for handling switching and control tasks in negative voltage environments. This MOSFET adopts Plannar planar process, providing reliable current carrying capacity and relatively high on-resistance, especially suitable for applications requiring high voltage isolation and stable performance, such as power management and protection circuits.
FQD2P40-VB is a high voltage P-channel MOSFET in TO-252 package, designed for high voltage and low current applications. Its maximum drain-source voltage is -500V, suitable for handling switching and control tasks in negative voltage environments. This MOSFET adopts Plannar planar process, providing reliable current carrying capacity and relatively high on-resistance, especially suitable for applications requiring high voltage isolation and stable performance, such as power management and protection circuits.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | 3900mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
2. Detailed parameter description
- **Package type**: TO-252
The TO-252 package is suitable for surface mounting, has excellent heat dissipation performance and mechanical strength, and is suitable for medium power applications.
- **Polarity**: Single P-channel
As a P-channel MOSFET, the device is used to handle the switching and control of negative voltage loads.
- **Maximum drain-source voltage (VDS)**: -500V
The maximum drain-source voltage is -500V, which can withstand high voltage environments and is suitable for high voltage applications.
- **Maximum gate-source voltage (VGS)**: ±20V
Supports gate-source voltage of ±20V, providing a large operating range and design flexibility.
- **Threshold voltage (Vth)**: -3V
The on-voltage is -3V, which is suitable for applications with medium gate drive voltage, improving switching performance and response speed.
- **On-resistance (RDS(ON))**:
- **4875mΩ @ VGS = 4.5V**
At 4.5V gate drive voltage, the on-resistance is 4875mΩ, suitable for low current switching applications.
- **3900mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 3900mΩ, providing lower on-resistance for high voltage environments.
- **Maximum drain current (ID)**: -2A
The maximum drain current is -2A, suitable for switching applications with low current loads.
- **Technology**: Plannar planar process
Using Plannar technology, it provides stable current handling capability and high voltage tolerance, suitable for high voltage isolation needs.
- **Package type**: TO-252
The TO-252 package is suitable for surface mounting, has excellent heat dissipation performance and mechanical strength, and is suitable for medium power applications.
- **Polarity**: Single P-channel
As a P-channel MOSFET, the device is used to handle the switching and control of negative voltage loads.
- **Maximum drain-source voltage (VDS)**: -500V
The maximum drain-source voltage is -500V, which can withstand high voltage environments and is suitable for high voltage applications.
- **Maximum gate-source voltage (VGS)**: ±20V
Supports gate-source voltage of ±20V, providing a large operating range and design flexibility.
- **Threshold voltage (Vth)**: -3V
The on-voltage is -3V, which is suitable for applications with medium gate drive voltage, improving switching performance and response speed.
- **On-resistance (RDS(ON))**:
- **4875mΩ @ VGS = 4.5V**
At 4.5V gate drive voltage, the on-resistance is 4875mΩ, suitable for low current switching applications.
- **3900mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 3900mΩ, providing lower on-resistance for high voltage environments.
- **Maximum drain current (ID)**: -2A
The maximum drain current is -2A, suitable for switching applications with low current loads.
- **Technology**: Plannar planar process
Using Plannar technology, it provides stable current handling capability and high voltage tolerance, suitable for high voltage isolation needs.
Domain and module applications：
3. Application fields and module description
1. **High-voltage power switch**: FQD2P40-VB is suitable for switching applications in high-voltage power management systems. Its 500V drain-source voltage capability enables it to effectively isolate and control high-voltage inputs, and is particularly suitable for use in high-voltage power converters and power protection circuits to ensure the safety and stability of the power system.
2. **Power protection**: In power protection circuits, this MOSFET can effectively handle the switching needs of high voltage and low current loads. Its high voltage tolerance and relatively high on-resistance make it suitable for overvoltage protection and overcurrent protection applications in protection circuits to protect sensitive electronic components from damage.
3. **Industrial control**: In industrial control systems, FQD2P40-VB can be used for switching and regulating high-voltage control signals. Its high voltage handling capability makes it suitable for control modules that require high voltage isolation, such as motor drive control and power management in automation equipment.
4. **HVAC system**: This MOSFET can also be applied to high-voltage switching and control in heating, ventilation and air conditioning (HVAC) systems. Its 500V withstand voltage capability and stable conduction performance ensure the reliable operation of HVAC systems in high-voltage environments and effectively control the power distribution in the system.
5. **Communication power supply**: FQD2P40-VB performs well in high-voltage switching and power control applications in communication equipment. Its high voltage isolation capability and low current handling capability make it suitable for power management and protection circuits in communication base station power supplies and other high-voltage communication equipment.
These application scenarios demonstrate the wide applicability and efficient performance of FQD2P40-VB in high voltage and low current environments, especially in applications requiring high voltage isolation and stable switching.
1. **High-voltage power switch**: FQD2P40-VB is suitable for switching applications in high-voltage power management systems. Its 500V drain-source voltage capability enables it to effectively isolate and control high-voltage inputs, and is particularly suitable for use in high-voltage power converters and power protection circuits to ensure the safety and stability of the power system.
2. **Power protection**: In power protection circuits, this MOSFET can effectively handle the switching needs of high voltage and low current loads. Its high voltage tolerance and relatively high on-resistance make it suitable for overvoltage protection and overcurrent protection applications in protection circuits to protect sensitive electronic components from damage.
3. **Industrial control**: In industrial control systems, FQD2P40-VB can be used for switching and regulating high-voltage control signals. Its high voltage handling capability makes it suitable for control modules that require high voltage isolation, such as motor drive control and power management in automation equipment.
4. **HVAC system**: This MOSFET can also be applied to high-voltage switching and control in heating, ventilation and air conditioning (HVAC) systems. Its 500V withstand voltage capability and stable conduction performance ensure the reliable operation of HVAC systems in high-voltage environments and effectively control the power distribution in the system.
5. **Communication power supply**: FQD2P40-VB performs well in high-voltage switching and power control applications in communication equipment. Its high voltage isolation capability and low current handling capability make it suitable for power management and protection circuits in communication base station power supplies and other high-voltage communication equipment.
These application scenarios demonstrate the wide applicability and efficient performance of FQD2P40-VB in high voltage and low current environments, especially in applications requiring high voltage isolation and stable switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
