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FQD2N90-VB Product details
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FQD2N90-VB MOSFET Product Introduction
FQD2N90-VB is a high voltage single N-channel MOSFET in TO-252 package, designed for applications requiring high voltage resistance and reliability. The MOSFET has a drain-source voltage (VDS) of 900V, enabling it to operate stably in a high voltage environment. The gate-source voltage (VGS) is ±30V, ensuring control flexibility over a wide range. Its threshold voltage (Vth) is 3.5V, suitable for general gate drive circuits. FQD2N90-VB adopts Super Junction Multi-EPI technology to achieve high current density and low conduction loss. Despite its on-resistance (RDS(ON)) of 2700mΩ@VGS=10V, the device is still able to carry a continuous drain current (ID) of 2A, suitable for specific application scenarios requiring high voltage control.
FQD2N90-VB is a high voltage single N-channel MOSFET in TO-252 package, designed for applications requiring high voltage resistance and reliability. The MOSFET has a drain-source voltage (VDS) of 900V, enabling it to operate stably in a high voltage environment. The gate-source voltage (VGS) is ±30V, ensuring control flexibility over a wide range. Its threshold voltage (Vth) is 3.5V, suitable for general gate drive circuits. FQD2N90-VB adopts Super Junction Multi-EPI technology to achieve high current density and low conduction loss. Despite its on-resistance (RDS(ON)) of 2700mΩ@VGS=10V, the device is still able to carry a continuous drain current (ID) of 2A, suitable for specific application scenarios requiring high voltage control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | 2700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of FQD2N90-VB
1. **Package**: TO-252
- Compact package with good heat dissipation, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, typically used in high-side or low-side switch applications.
3. **Drain-Source Voltage (VDS)**: 900V
- The maximum drain-to-source voltage that can be tolerated, suitable for high-voltage applications.
4. **Gate-Source Voltage (VGS)**: ±30V
- The maximum voltage that can be applied between the gate and source, providing a wide range of control voltages.
5. **Threshold Voltage (Vth)**: 3.5V
- The minimum gate voltage required to turn on the MOSFET, suitable for standard drive voltage applications.
6. **On-resistance (RDS(ON))**: 2700mΩ @ VGS=10V
- The drain-to-source resistance of the MOSFET when it is fully turned on at a gate voltage of 10V.
7. **Continuous drain current (ID)**: 2A
- The maximum current that a MOSFET can carry under continuous operation.
8. **Technology**: SJ_Multi-EPI
- Using Super Junction Multi-EPI technology, low conduction loss and high efficiency at high voltage are achieved.
1. **Package**: TO-252
- Compact package with good heat dissipation, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, typically used in high-side or low-side switch applications.
3. **Drain-Source Voltage (VDS)**: 900V
- The maximum drain-to-source voltage that can be tolerated, suitable for high-voltage applications.
4. **Gate-Source Voltage (VGS)**: ±30V
- The maximum voltage that can be applied between the gate and source, providing a wide range of control voltages.
5. **Threshold Voltage (Vth)**: 3.5V
- The minimum gate voltage required to turn on the MOSFET, suitable for standard drive voltage applications.
6. **On-resistance (RDS(ON))**: 2700mΩ @ VGS=10V
- The drain-to-source resistance of the MOSFET when it is fully turned on at a gate voltage of 10V.
7. **Continuous drain current (ID)**: 2A
- The maximum current that a MOSFET can carry under continuous operation.
8. **Technology**: SJ_Multi-EPI
- Using Super Junction Multi-EPI technology, low conduction loss and high efficiency at high voltage are achieved.
Domain and module applications：
Application Examples of FQD2N90-VB
FQD2N90-VB MOSFET is suitable for a variety of application scenarios that require high voltage control due to its high voltage tolerance and reliable performance. Here are some specific application examples:
1. **Power Inverter**: This MOSFET is very suitable for use in high voltage power inverters, especially in applications where high DC voltage needs to be converted to AC voltage. Its 900V VDS and reliable SJ_Multi-EPI technology ensure efficient power conversion and minimal power loss.
2. **Industrial Power Control**: In the power control module of industrial equipment, FQD2N90-VB MOSFET can be used for high voltage switching and control circuits, such as high voltage DC power supply, power conditioner, etc. Its high voltage capability ensures safe operation in harsh industrial environments.
3. **Grid Equipment**: FQD2N90-VB is suitable for high voltage switch modules in grid equipment, such as static circuit breakers and high voltage transfer switches. These devices require high withstand voltage and reliable switching performance, and the FQD2N90-VB MOSFET can meet these demanding requirements.
4. **Lighting equipment**: In high-voltage LED drivers and HID (high-intensity gas discharge lamp) power supplies, the FQD2N90-VB can be used in high-voltage control circuits. Its high withstand voltage characteristics ensure stable power management in these high-voltage applications.
The FQD2N90-VB MOSFET is particularly suitable for high-voltage control and conversion applications with its excellent high-voltage performance and stability. The SJ_Multi-EPI technology it uses improves the efficiency and reliability of the device, making it an ideal choice for high-voltage applications.
FQD2N90-VB MOSFET is suitable for a variety of application scenarios that require high voltage control due to its high voltage tolerance and reliable performance. Here are some specific application examples:
1. **Power Inverter**: This MOSFET is very suitable for use in high voltage power inverters, especially in applications where high DC voltage needs to be converted to AC voltage. Its 900V VDS and reliable SJ_Multi-EPI technology ensure efficient power conversion and minimal power loss.
2. **Industrial Power Control**: In the power control module of industrial equipment, FQD2N90-VB MOSFET can be used for high voltage switching and control circuits, such as high voltage DC power supply, power conditioner, etc. Its high voltage capability ensures safe operation in harsh industrial environments.
3. **Grid Equipment**: FQD2N90-VB is suitable for high voltage switch modules in grid equipment, such as static circuit breakers and high voltage transfer switches. These devices require high withstand voltage and reliable switching performance, and the FQD2N90-VB MOSFET can meet these demanding requirements.
4. **Lighting equipment**: In high-voltage LED drivers and HID (high-intensity gas discharge lamp) power supplies, the FQD2N90-VB can be used in high-voltage control circuits. Its high withstand voltage characteristics ensure stable power management in these high-voltage applications.
The FQD2N90-VB MOSFET is particularly suitable for high-voltage control and conversion applications with its excellent high-voltage performance and stability. The SJ_Multi-EPI technology it uses improves the efficiency and reliability of the device, making it an ideal choice for high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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