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FQD2N90TM-VB Product details

Product introduction:

1. FQD2N90TM-VB Product Introduction

FQD2N90TM-VB is a high voltage single N-channel power MOSFET packaged in TO-252, suitable for extremely high voltage applications. This MOSFET has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V, and can operate reliably in extreme voltage environments. It uses SJ_Multi-EPI technology, which provides excellent stability in high-voltage applications despite its high on-resistance (2700mΩ@VGS=10V). The FQD2N90TM-VB has a drain current (ID) of 2A and is suitable for high-voltage circuits with low current requirements, such as power management and industrial control systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 900V 3.5V 2A 2700mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 900V 3.5V 2A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 900V 3.5V 2A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N
2. FQD2N90TM-VB Detailed parameter description

1. **Package type**: TO-252
2. **Configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 900V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 2700mΩ @ VGS=10V
7. **Drain current (ID)**: 2A
8. **Technology**: SJ_Multi-EPI

Domain and module applications:

3. Applicable fields and application examples of modules

1. **High-voltage power supply**: FQD2N90TM-VB has a wide range of applications in high-voltage switching power supplies such as power adapters and industrial power supplies. Its high voltage rating of 900V makes it suitable for applications that require handling of extremely high input voltages, ensuring stability and reliability during power conversion.

2. **Industrial control system**: In industrial control systems that require high-voltage operation, such as control units for large mechanical equipment, FQD2N90TM-VB is an ideal choice. It can effectively handle high-voltage signals and maintain stable operation in harsh industrial environments.

3. **Lighting system**: Especially in high-voltage LED lighting and street lighting applications, FQD2N90TM-VB can be used as a driver. Its high voltage handling capability enables it to protect LED components in complex power grid environments and extend the life of lighting systems.

4. **Power transmission**: This MOSFET is also used in power transmission and distribution systems, especially in modules that need to isolate and convert high-voltage signals. The high voltage withstand characteristics and low current transmission capabilities of the FQD2N90TM-VB are very suitable for use in these high-voltage environments.

Through these application examples, it can be seen that the FQD2N90TM-VB performs well in situations with high voltage and low current requirements, and is an ideal choice for power management, industrial control, and high-voltage lighting.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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