FQD2N90TM-VB Product details
Product introduction:
FQD2N90TM-VB is a high voltage single N-channel power MOSFET packaged in TO-252, suitable for extremely high voltage applications. This MOSFET has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of ±30V, and can operate reliably in extreme voltage environments. It uses SJ_Multi-EPI technology, which provides excellent stability in high-voltage applications despite its high on-resistance (2700mΩ@VGS=10V). The FQD2N90TM-VB has a drain current (ID) of 2A and is suitable for high-voltage circuits with low current requirements, such as power management and industrial control systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | 2700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 900V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
1. **Package type**: TO-252
2. **Configuration**: Single-N-Channel
3. **Drain-source voltage (VDS)**: 900V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 2700mΩ @ VGS=10V
7. **Drain current (ID)**: 2A
8. **Technology**: SJ_Multi-EPI
Domain and module applications:
1. **High-voltage power supply**: FQD2N90TM-VB has a wide range of applications in high-voltage switching power supplies such as power adapters and industrial power supplies. Its high voltage rating of 900V makes it suitable for applications that require handling of extremely high input voltages, ensuring stability and reliability during power conversion.
2. **Industrial control system**: In industrial control systems that require high-voltage operation, such as control units for large mechanical equipment, FQD2N90TM-VB is an ideal choice. It can effectively handle high-voltage signals and maintain stable operation in harsh industrial environments.
3. **Lighting system**: Especially in high-voltage LED lighting and street lighting applications, FQD2N90TM-VB can be used as a driver. Its high voltage handling capability enables it to protect LED components in complex power grid environments and extend the life of lighting systems.
4. **Power transmission**: This MOSFET is also used in power transmission and distribution systems, especially in modules that need to isolate and convert high-voltage signals. The high voltage withstand characteristics and low current transmission capabilities of the FQD2N90TM-VB are very suitable for use in these high-voltage environments.
Through these application examples, it can be seen that the FQD2N90TM-VB performs well in situations with high voltage and low current requirements, and is an ideal choice for power management, industrial control, and high-voltage lighting.
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