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FQD2N80-VB Product details
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FQD2N80-VB MOSFET Product Introduction
**FQD2N80-VB** is a single-tube N-type MOSFET in TO-252 package and uses SJ_Multi-EPI technology. This MOSFET has a drain-source voltage (VDS) tolerance of up to 800V and a gate-source voltage (VGS) range of ±30V, which is suitable for high-voltage applications. Its threshold voltage (Vth) is 3.5V. When VGS = 10V, the on-resistance (RDS(ON)) is 2600mΩ and the maximum drain current (ID) is 2A, which is suitable for applications that require high voltage tolerance and medium current.
**FQD2N80-VB** is a single-tube N-type MOSFET in TO-252 package and uses SJ_Multi-EPI technology. This MOSFET has a drain-source voltage (VDS) tolerance of up to 800V and a gate-source voltage (VGS) range of ±30V, which is suitable for high-voltage applications. Its threshold voltage (Vth) is 3.5V. When VGS = 10V, the on-resistance (RDS(ON)) is 2600mΩ and the maximum drain current (ID) is 2A, which is suitable for applications that require high voltage tolerance and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO-252
- **Configuration**: Single tube N-type
- **VDS (drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 2600mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 2A
- **Technology**: SJ_Multi-EPI
- **Package**: TO-252
- **Configuration**: Single tube N-type
- **VDS (drain-source voltage)**: 800V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON) (on-resistance)**: 2600mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
Application Examples
**FQD2N80-VB** MOSFET is very suitable for the following fields and modules:
1. **High-voltage switching power supply**: In high-voltage switch mode power supply (SMPS), FQD2N80-VB can handle voltages up to 800V as a switching element, ensuring the stability and high efficiency of the power supply, and is suitable for high-voltage power supply design.
2. **Industrial control system**: This MOSFET is suitable for high-voltage switching and control circuits in industrial equipment, such as high-voltage drive and power regulation in industrial automation systems.
3. **Lighting system**: In LED drive circuits or fluorescent lamp electronic ballasts, FQD2N80-VB can provide reliable high-voltage switch control, ensuring high efficiency and long life of the lighting system.
4. **Inverter and Power Conversion**: In high voltage inverter modules, especially inverter systems that require high voltage tolerance, FQD2N80-VB can be used for power conversion and switching operations to ensure efficient energy transfer and stable output.
These application scenarios demonstrate the wide applicability and reliability of FQD2N80-VB in high voltage switching and control applications.
**FQD2N80-VB** MOSFET is very suitable for the following fields and modules:
1. **High-voltage switching power supply**: In high-voltage switch mode power supply (SMPS), FQD2N80-VB can handle voltages up to 800V as a switching element, ensuring the stability and high efficiency of the power supply, and is suitable for high-voltage power supply design.
2. **Industrial control system**: This MOSFET is suitable for high-voltage switching and control circuits in industrial equipment, such as high-voltage drive and power regulation in industrial automation systems.
3. **Lighting system**: In LED drive circuits or fluorescent lamp electronic ballasts, FQD2N80-VB can provide reliable high-voltage switch control, ensuring high efficiency and long life of the lighting system.
4. **Inverter and Power Conversion**: In high voltage inverter modules, especially inverter systems that require high voltage tolerance, FQD2N80-VB can be used for power conversion and switching operations to ensure efficient energy transfer and stable output.
These application scenarios demonstrate the wide applicability and reliability of FQD2N80-VB in high voltage switching and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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