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FQD2N80TM-VB Product details
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1. FQD2N80TM-VB Product Introduction
FQD2N80TM-VB is a single N-channel MOSFET in TO252 package, designed for extremely high voltage applications. It uses advanced SJ_Multi-EPI technology, which makes it perform well in high voltage applications. With high withstand voltage and low on-resistance, this MOSFET provides reliable switching and current control capabilities in power conversion, industrial control and other fields. Although its on-resistance is relatively high, its excellent voltage handling capability makes it very suitable for application scenarios that require high voltage and stable performance.
FQD2N80TM-VB is a single N-channel MOSFET in TO252 package, designed for extremely high voltage applications. It uses advanced SJ_Multi-EPI technology, which makes it perform well in high voltage applications. With high withstand voltage and low on-resistance, this MOSFET provides reliable switching and current control capabilities in power conversion, industrial control and other fields. Although its on-resistance is relatively high, its excellent voltage handling capability makes it very suitable for application scenarios that require high voltage and stable performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FQD2N80TM-VB Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology type**: SJ_Multi-EPI
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology type**: SJ_Multi-EPI
Domain and module applications：
3. Application fields and modules of FQD2N80TM-VB
1. **High-voltage power conversion**: The high voltage withstand capability of FQD2N80TM-VB makes it an ideal choice for high-voltage power converters, such as AC-DC converters and DC-DC boost converters. It can effectively handle voltages up to 800V, ensuring the efficiency and stability of the system.
2. **Industrial control equipment**: In industrial control systems, this MOSFET can be used for high-voltage load switches and power control modules. Its high voltage handling capability makes it suitable for industrial equipment that requires high reliability, especially in the fields of factory automation and motor drives.
3. **Lighting system**: FQD2N80TM-VB is suitable for the control circuits of high-voltage LED drivers and HID lamps, and can effectively control current in high-voltage environments and provide stable lighting performance.
4. **Electrical isolation and protection**: Due to its extremely high withstand voltage characteristics, this MOSFET is also suitable for circuits that require high voltage isolation and protection, such as high voltage power supply protection circuits and electrical isolation switch modules, to ensure the safe and stable operation of the system under abnormal conditions.
1. **High-voltage power conversion**: The high voltage withstand capability of FQD2N80TM-VB makes it an ideal choice for high-voltage power converters, such as AC-DC converters and DC-DC boost converters. It can effectively handle voltages up to 800V, ensuring the efficiency and stability of the system.
2. **Industrial control equipment**: In industrial control systems, this MOSFET can be used for high-voltage load switches and power control modules. Its high voltage handling capability makes it suitable for industrial equipment that requires high reliability, especially in the fields of factory automation and motor drives.
3. **Lighting system**: FQD2N80TM-VB is suitable for the control circuits of high-voltage LED drivers and HID lamps, and can effectively control current in high-voltage environments and provide stable lighting performance.
4. **Electrical isolation and protection**: Due to its extremely high withstand voltage characteristics, this MOSFET is also suitable for circuits that require high voltage isolation and protection, such as high voltage power supply protection circuits and electrical isolation switch modules, to ensure the safe and stable operation of the system under abnormal conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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