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FQD2N80TF-VB Product details
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FQD2N80TF-VB MOSFET Product Introduction
FQD2N80TF-VB is a high voltage N-channel MOSFET in TO252 package, which is particularly suitable for high voltage applications. It uses SJ_Multi-EPI technology to provide excellent voltage resistance and reliability, ensuring stable operation under high voltage conditions. With a maximum drain-source voltage of 800V and a continuous drain current capability of 2A, the device is suitable for a variety of application scenarios requiring high voltage switching. Despite its high on-resistance, this MOSFET still performs well in high voltage applications.
FQD2N80TF-VB is a high voltage N-channel MOSFET in TO252 package, which is particularly suitable for high voltage applications. It uses SJ_Multi-EPI technology to provide excellent voltage resistance and reliability, ensuring stable operation under high voltage conditions. With a maximum drain-source voltage of 800V and a continuous drain current capability of 2A, the device is suitable for a variety of application scenarios requiring high voltage switching. Despite its high on-resistance, this MOSFET still performs well in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FQD2N80TF-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2600mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2600mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
FQD2N80TF-VB MOSFET Applications and Module Examples
1. **High-voltage Switching Applications**:
- FQD2N80TF-VB is ideal for high-voltage switching applications such as high-voltage DC-DC converters and power management systems. Its 800V withstand voltage capability enables it to handle harsh high-voltage conditions, ensuring the safety and stability of switching operations.
2. **Power Protection Circuit**:
- In the power protection circuit, FQD2N80TF-VB can be used to prevent overvoltage and overcurrent conditions. Its high withstand voltage characteristics make it an ideal choice for high-voltage protection circuits, providing effective protection under high voltage.
3. **High-voltage Power Module**:
- This MOSFET can be used in high-voltage power modules, such as industrial power supplies and TV power supplies, to provide efficient voltage conversion and regulation functions to ensure the safe operation of equipment in high-voltage environments.
4. **Household appliances and industrial applications**:
- In household appliances such as microwave ovens and washing machines, and industrial applications such as power tools, the FQD2N80TF-VB can provide reliable current control in high voltage operating environments, ensuring long-term stable operation of the equipment.
The high voltage and high reliability characteristics of the FQD2N80TF-VB MOSFET make it an ideal choice for applications such as high voltage switches, protection circuits and high voltage power modules, meeting the needs of various applications that require high voltage operation.
1. **High-voltage Switching Applications**:
- FQD2N80TF-VB is ideal for high-voltage switching applications such as high-voltage DC-DC converters and power management systems. Its 800V withstand voltage capability enables it to handle harsh high-voltage conditions, ensuring the safety and stability of switching operations.
2. **Power Protection Circuit**:
- In the power protection circuit, FQD2N80TF-VB can be used to prevent overvoltage and overcurrent conditions. Its high withstand voltage characteristics make it an ideal choice for high-voltage protection circuits, providing effective protection under high voltage.
3. **High-voltage Power Module**:
- This MOSFET can be used in high-voltage power modules, such as industrial power supplies and TV power supplies, to provide efficient voltage conversion and regulation functions to ensure the safe operation of equipment in high-voltage environments.
4. **Household appliances and industrial applications**:
- In household appliances such as microwave ovens and washing machines, and industrial applications such as power tools, the FQD2N80TF-VB can provide reliable current control in high voltage operating environments, ensuring long-term stable operation of the equipment.
The high voltage and high reliability characteristics of the FQD2N80TF-VB MOSFET make it an ideal choice for applications such as high voltage switches, protection circuits and high voltage power modules, meeting the needs of various applications that require high voltage operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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