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FQD2N60CTM-VB Product details
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FQD2N60CTM-VB Product Introduction
FQD2N60CTM-VB is a single N-channel power MOSFET in TO252 package, designed for high voltage applications. Its drain-source voltage (VDS) is 650V and supports a gate-source voltage (VGS) of ±30V. The device has a typical turn-on voltage of 3.5V, an on-resistance of 3440mΩ at VGS=4.5V and 4300mΩ at VGS=10V. The FQD2N60CTM-VB has a maximum drain current of 2A and uses planar process technology, making it suitable for switching applications that require high voltage resistance and low current, such as high voltage power supplies and power conversion modules.
FQD2N60CTM-VB is a single N-channel power MOSFET in TO252 package, designed for high voltage applications. Its drain-source voltage (VDS) is 650V and supports a gate-source voltage (VGS) of ±30V. The device has a typical turn-on voltage of 3.5V, an on-resistance of 3440mΩ at VGS=4.5V and 4300mΩ at VGS=10V. The FQD2N60CTM-VB has a maximum drain current of 2A and uses planar process technology, making it suitable for switching applications that require high voltage resistance and low current, such as high voltage power supplies and power conversion modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FQD2N60CTM-VB Detailed parameter description
1. **Package type**: TO252
The TO252 package has good heat dissipation performance and compact design, suitable for surface mounting and space-constrained applications.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD2N60CTM-VB is suitable for low-side switching applications to effectively control current flow.
3. **Drain-source voltage (VDS)**: 650V
The maximum drain-source voltage of this MOSFET is 650V, making it suitable for switch control applications in high-voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltages up to ±30V, ensuring stability and reliability under various operating conditions.
5. **Throw-on voltage (Vth)**: 3.5V
The typical turn-on voltage is 3.5V, which allows the MOSFET to enter the on state at a lower gate voltage.
6. **On-resistance (RDS(ON))**:
- 3440mΩ @ VGS=4.5V
- 4300mΩ @ VGS=10V
The higher on-resistance indicates that the device is more suitable for high-voltage applications that do not need to handle large currents.
7. **Drain current (ID)**: 2A
The maximum drain current is 2A, which is suitable for medium and low current high-voltage switching applications.
8. **Technology**: Planar technology (Plannar)
The use of planar technology is suitable for high-voltage applications and provides better switching performance.
1. **Package type**: TO252
The TO252 package has good heat dissipation performance and compact design, suitable for surface mounting and space-constrained applications.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD2N60CTM-VB is suitable for low-side switching applications to effectively control current flow.
3. **Drain-source voltage (VDS)**: 650V
The maximum drain-source voltage of this MOSFET is 650V, making it suitable for switch control applications in high-voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltages up to ±30V, ensuring stability and reliability under various operating conditions.
5. **Throw-on voltage (Vth)**: 3.5V
The typical turn-on voltage is 3.5V, which allows the MOSFET to enter the on state at a lower gate voltage.
6. **On-resistance (RDS(ON))**:
- 3440mΩ @ VGS=4.5V
- 4300mΩ @ VGS=10V
The higher on-resistance indicates that the device is more suitable for high-voltage applications that do not need to handle large currents.
7. **Drain current (ID)**: 2A
The maximum drain current is 2A, which is suitable for medium and low current high-voltage switching applications.
8. **Technology**: Planar technology (Plannar)
The use of planar technology is suitable for high-voltage applications and provides better switching performance.
Domain and module applications：
Application fields and module examples
1. **High-voltage switching power supply**:
FQD2N60CTM-VB is very suitable for switch controller applications in high-voltage switching power supplies. Due to its high drain-source voltage of up to 650V, it can provide reliable switching performance in power management systems that need to handle high voltage conversion.
2. **Lighting equipment**:
In high-voltage lighting equipment, such as industrial or commercial lighting, this MOSFET can be used as a switching device to control the on and off state of the lamp to ensure high efficiency and stability of the system.
3. **Battery management system**:
In battery management systems that require high-voltage handling capabilities, FQD2N60CTM-VB can be used as a protection switch on the high-voltage side to control the battery charging and discharging process to ensure safe operation of the system.
4. **Industrial control circuit**:
The device performs well in industrial control circuits and is suitable for application scenarios that require high-voltage switching, such as motor controllers, relay drivers, etc.
5. **Home Appliance Power Module**:
FQD2N60CTM-VB can be used in high voltage power modules for home appliances, such as air conditioners, refrigerators and other large appliances, as a switch control device to manage the on/off state of the power supply and the flow of current.
These application examples demonstrate the wide applicability of FQD2N60CTM-VB in high voltage switch control and power management, especially in systems requiring high voltage withstand capability and moderate current handling.
1. **High-voltage switching power supply**:
FQD2N60CTM-VB is very suitable for switch controller applications in high-voltage switching power supplies. Due to its high drain-source voltage of up to 650V, it can provide reliable switching performance in power management systems that need to handle high voltage conversion.
2. **Lighting equipment**:
In high-voltage lighting equipment, such as industrial or commercial lighting, this MOSFET can be used as a switching device to control the on and off state of the lamp to ensure high efficiency and stability of the system.
3. **Battery management system**:
In battery management systems that require high-voltage handling capabilities, FQD2N60CTM-VB can be used as a protection switch on the high-voltage side to control the battery charging and discharging process to ensure safe operation of the system.
4. **Industrial control circuit**:
The device performs well in industrial control circuits and is suitable for application scenarios that require high-voltage switching, such as motor controllers, relay drivers, etc.
5. **Home Appliance Power Module**:
FQD2N60CTM-VB can be used in high voltage power modules for home appliances, such as air conditioners, refrigerators and other large appliances, as a switch control device to manage the on/off state of the power supply and the flow of current.
These application examples demonstrate the wide applicability of FQD2N60CTM-VB in high voltage switch control and power management, especially in systems requiring high voltage withstand capability and moderate current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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