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FQD2N50TF-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
FQD2N50TF-VB is a high voltage N-channel MOSFET in TO-252 package, designed for high voltage and low current applications. Its maximum drain-source voltage is 650V, which can provide reliable switching and control performance in extreme voltage environments. Using Plannar planar process technology, this MOSFET provides a higher on-resistance, making it particularly suitable for applications that require high voltage isolation and low current handling, such as power management, industrial control and protection circuits.
FQD2N50TF-VB is a high voltage N-channel MOSFET in TO-252 package, designed for high voltage and low current applications. Its maximum drain-source voltage is 650V, which can provide reliable switching and control performance in extreme voltage environments. Using Plannar planar process technology, this MOSFET provides a higher on-resistance, making it particularly suitable for applications that require high voltage isolation and low current handling, such as power management, industrial control and protection circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO-252
The TO-252 package is suitable for surface mounting, has good heat dissipation performance and mechanical strength, and is suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle positive voltage load switching and control.
- **Maximum drain-source voltage (VDS)**: 650V
The maximum drain-source voltage is 650V, which can withstand extremely high voltage environments and is suitable for high voltage applications.
- **Maximum gate-source voltage (VGS)**: ±30V
Supports gate-source voltage of ±30V, providing a large operating range and design flexibility.
- **Threshold voltage (Vth)**: 3.5V
The on-voltage is 3.5V, which is suitable for applications with medium gate drive voltage and provides stable switching performance.
- **On-resistance (RDS(ON))**:
- **3440mΩ @ VGS = 4.5V**
At 4.5V gate drive voltage, the on-resistance is 3440mΩ, suitable for low current switching applications.
- **4300mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 4300mΩ, providing higher voltage isolation capability.
- **Maximum drain current (ID)**: 2A
Maximum drain current is 2A, suitable for switching applications with low current loads.
- **Technology**: Plannar planar process
Using traditional planar process technology, it provides stable current handling capability and high voltage tolerance, suitable for high voltage isolation needs.
- **Package type**: TO-252
The TO-252 package is suitable for surface mounting, has good heat dissipation performance and mechanical strength, and is suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle positive voltage load switching and control.
- **Maximum drain-source voltage (VDS)**: 650V
The maximum drain-source voltage is 650V, which can withstand extremely high voltage environments and is suitable for high voltage applications.
- **Maximum gate-source voltage (VGS)**: ±30V
Supports gate-source voltage of ±30V, providing a large operating range and design flexibility.
- **Threshold voltage (Vth)**: 3.5V
The on-voltage is 3.5V, which is suitable for applications with medium gate drive voltage and provides stable switching performance.
- **On-resistance (RDS(ON))**:
- **3440mΩ @ VGS = 4.5V**
At 4.5V gate drive voltage, the on-resistance is 3440mΩ, suitable for low current switching applications.
- **4300mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 4300mΩ, providing higher voltage isolation capability.
- **Maximum drain current (ID)**: 2A
Maximum drain current is 2A, suitable for switching applications with low current loads.
- **Technology**: Plannar planar process
Using traditional planar process technology, it provides stable current handling capability and high voltage tolerance, suitable for high voltage isolation needs.
Domain and module applications：
3. Application fields and module description
1. **Power management**: FQD2N50TF-VB is suitable for high-voltage isolation applications in power management systems. Its 650V drain-source voltage capability enables it to effectively isolate high-voltage inputs, making it suitable for power modules that require high-voltage protection, such as isolated power converters and high-voltage input power management circuits.
2. **Industrial control**: In industrial control systems, this MOSFET can be used for high-voltage signal control and switching. Its high on-resistance characteristics ensure safety and stability in low-current applications, making it suitable for control modules that require high-voltage isolation, such as signal switching and protection circuits in industrial automation systems.
3. **Protection circuit**: The high voltage tolerance and high on-resistance of FQD2N50TF-VB make it ideal for protection circuits, especially in overvoltage protection and current limiting applications in power systems and high-voltage environments. The device can effectively prevent current surges and overvoltage conditions, protecting sensitive electronic components from damage.
4. **HVAC system**: In heating, ventilation and air conditioning (HVAC) systems, this MOSFET can be used for high-voltage switching and power control. Its high voltage handling capability and stable switching performance ensure the reliable operation of HVAC systems in high-voltage environments and can effectively control power distribution in the system.
5. **Communication power supply**: FQD2N50TF-VB is also suitable for high-voltage switching and regulation applications in communication power supply systems. Its 650V withstand voltage capability and low current handling capability make it suitable for high-voltage input regulation and isolation circuits in base station power supplies and communication equipment.
These application scenarios demonstrate the wide applicability of FQD2N50TF-VB in high voltage and low current environments, especially in applications requiring high voltage isolation and stable switching.
1. **Power management**: FQD2N50TF-VB is suitable for high-voltage isolation applications in power management systems. Its 650V drain-source voltage capability enables it to effectively isolate high-voltage inputs, making it suitable for power modules that require high-voltage protection, such as isolated power converters and high-voltage input power management circuits.
2. **Industrial control**: In industrial control systems, this MOSFET can be used for high-voltage signal control and switching. Its high on-resistance characteristics ensure safety and stability in low-current applications, making it suitable for control modules that require high-voltage isolation, such as signal switching and protection circuits in industrial automation systems.
3. **Protection circuit**: The high voltage tolerance and high on-resistance of FQD2N50TF-VB make it ideal for protection circuits, especially in overvoltage protection and current limiting applications in power systems and high-voltage environments. The device can effectively prevent current surges and overvoltage conditions, protecting sensitive electronic components from damage.
4. **HVAC system**: In heating, ventilation and air conditioning (HVAC) systems, this MOSFET can be used for high-voltage switching and power control. Its high voltage handling capability and stable switching performance ensure the reliable operation of HVAC systems in high-voltage environments and can effectively control power distribution in the system.
5. **Communication power supply**: FQD2N50TF-VB is also suitable for high-voltage switching and regulation applications in communication power supply systems. Its 650V withstand voltage capability and low current handling capability make it suitable for high-voltage input regulation and isolation circuits in base station power supplies and communication equipment.
These application scenarios demonstrate the wide applicability of FQD2N50TF-VB in high voltage and low current environments, especially in applications requiring high voltage isolation and stable switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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