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FQD2N30TF-VB Product details
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Product Introduction
**FQD2N30TF-VB** is a high voltage N-Channel MOSFET in TO252 package, suitable for high voltage and medium current electronic applications. Its maximum drain-source voltage is 650V, making it suitable for use in applications requiring high voltage isolation. This MOSFET uses Plannar technology, and although the on-resistance is relatively high, it provides reliable performance and stability in high voltage environments, suitable for switching applications requiring higher voltages.
**FQD2N30TF-VB** is a high voltage N-Channel MOSFET in TO252 package, suitable for high voltage and medium current electronic applications. Its maximum drain-source voltage is 650V, making it suitable for use in applications requiring high voltage isolation. This MOSFET uses Plannar technology, and although the on-resistance is relatively high, it provides reliable performance and stability in high voltage environments, suitable for switching applications requiring higher voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: FQD2N30TF-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**:
- 2750mΩ (VGS = 4.5V)
- 2200mΩ (VGS = 10V)
- **Maximum Drain Current (ID)**: 4A
- **Technology**: Plannar
- **Model**: FQD2N30TF-VB
- **Package**: TO252
- **Configuration**: Single N-Channel
- **Drain-Source Voltage (VDS)**: 650V
- **Gate-Source Voltage (VGS)**: ±30V
- **Threshold Voltage (Vth)**: 3.5V
- **On-Resistance (RDS(ON))**:
- 2750mΩ (VGS = 4.5V)
- 2200mΩ (VGS = 10V)
- **Maximum Drain Current (ID)**: 4A
- **Technology**: Plannar
Domain and module applications：
Application fields and module examples
1. **High voltage switch**: The high voltage tolerance of FQD2N30TF-VB makes it very suitable for high voltage switching applications, such as high voltage relays and protection switches. In high voltage environments, it can effectively control the flow of current and provide stable switching operation.
2. **Power protection**: In power protection systems, FQD2N30TF-VB can be used as a high voltage protection switch to prevent overvoltage conditions from damaging the circuit. Its high drain-source voltage capability helps protect sensitive components and ensure the safety of the power system.
3. **High voltage power converter**: This MOSFET is also suitable for high voltage power converters, especially in situations where higher voltages need to be handled. Although its on-resistance is higher, its performance and stability are still guaranteed in high voltage applications.
4. **Power Electronics**: In various power electronic devices, such as high-power converters and inverters, the FQD2N30TF-VB can provide the necessary voltage isolation and switching functions to support stable operation of the equipment in high-voltage environments.
The high voltage tolerance and stability of the FQD2N30TF-VB make it important in applications that need to handle high voltages and provide current control.
1. **High voltage switch**: The high voltage tolerance of FQD2N30TF-VB makes it very suitable for high voltage switching applications, such as high voltage relays and protection switches. In high voltage environments, it can effectively control the flow of current and provide stable switching operation.
2. **Power protection**: In power protection systems, FQD2N30TF-VB can be used as a high voltage protection switch to prevent overvoltage conditions from damaging the circuit. Its high drain-source voltage capability helps protect sensitive components and ensure the safety of the power system.
3. **High voltage power converter**: This MOSFET is also suitable for high voltage power converters, especially in situations where higher voltages need to be handled. Although its on-resistance is higher, its performance and stability are still guaranteed in high voltage applications.
4. **Power Electronics**: In various power electronic devices, such as high-power converters and inverters, the FQD2N30TF-VB can provide the necessary voltage isolation and switching functions to support stable operation of the equipment in high-voltage environments.
The high voltage tolerance and stability of the FQD2N30TF-VB make it important in applications that need to handle high voltages and provide current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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