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FQD24N08TM-VB Product details
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FQD24N08TM-VB MOSFET Product Introduction
FQD24N08TM-VB is a high-performance single N-channel MOSFET packaged in TO-252, designed for efficient power management and switching applications. With a drain-source voltage (VDS) of 100V, this MOSFET is suitable for medium voltage power circuits. The gate-source voltage (VGS) is ±20V, ensuring the stability of the MOSFET under various operating conditions. The threshold voltage (Vth) is 1.8V, ensuring fast switching capability at low gate drive voltage. FQD24N08TM-VB uses Trench technology, with an on-resistance (RDS(ON)) of 35mΩ at a gate voltage of 4.5V and 30mΩ at a gate voltage of 10V. These features help reduce power consumption and improve efficiency. It can carry a continuous drain current (ID) of up to 40A, making it an excellent performer in applications requiring high current.
FQD24N08TM-VB is a high-performance single N-channel MOSFET packaged in TO-252, designed for efficient power management and switching applications. With a drain-source voltage (VDS) of 100V, this MOSFET is suitable for medium voltage power circuits. The gate-source voltage (VGS) is ±20V, ensuring the stability of the MOSFET under various operating conditions. The threshold voltage (Vth) is 1.8V, ensuring fast switching capability at low gate drive voltage. FQD24N08TM-VB uses Trench technology, with an on-resistance (RDS(ON)) of 35mΩ at a gate voltage of 4.5V and 30mΩ at a gate voltage of 10V. These features help reduce power consumption and improve efficiency. It can carry a continuous drain current (ID) of up to 40A, making it an excellent performer in applications requiring high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of FQD24N08TM-VB
1. **Package**: TO-252
- Compact and has good heat dissipation performance, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, typically used in high-side or low-side switch applications.
3. **Drain-Source Voltage (VDS)**: 100V
- The maximum drain-to-source voltage that the MOSFET can withstand, suitable for medium voltage applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and the source to control the MOSFET.
5. **Threshold Voltage (Vth)**: 1.8V
- The minimum gate voltage required to turn on the MOSFET, a lower threshold voltage allows a lower drive voltage.
6. **On-resistance (RDS(ON))**:
- **35mΩ @ VGS=4.5V**
- The drain-to-source resistance of the MOSFET when it is fully turned on at a gate voltage of 4.5V.
- **30mΩ @ VGS=10V**
- The drain-to-source resistance of the MOSFET when it is fully turned on at a gate voltage of 10V. Lower RDS(ON) values mean lower power dissipation and higher efficiency.
7. **Continuous drain current (ID)**: 40A
- The maximum current that the MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using Trench technology, it has low on-resistance and high switching efficiency, improving switching performance and power density.
1. **Package**: TO-252
- Compact and has good heat dissipation performance, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, typically used in high-side or low-side switch applications.
3. **Drain-Source Voltage (VDS)**: 100V
- The maximum drain-to-source voltage that the MOSFET can withstand, suitable for medium voltage applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and the source to control the MOSFET.
5. **Threshold Voltage (Vth)**: 1.8V
- The minimum gate voltage required to turn on the MOSFET, a lower threshold voltage allows a lower drive voltage.
6. **On-resistance (RDS(ON))**:
- **35mΩ @ VGS=4.5V**
- The drain-to-source resistance of the MOSFET when it is fully turned on at a gate voltage of 4.5V.
- **30mΩ @ VGS=10V**
- The drain-to-source resistance of the MOSFET when it is fully turned on at a gate voltage of 10V. Lower RDS(ON) values mean lower power dissipation and higher efficiency.
7. **Continuous drain current (ID)**: 40A
- The maximum current that the MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using Trench technology, it has low on-resistance and high switching efficiency, improving switching performance and power density.
Domain and module applications：
Application Examples of FQD24N08TM-VB
FQD24N08TM-VB MOSFET is suitable for various fields and modules due to its high performance characteristics. Here are some specific application examples:
1. **Power Management**: This MOSFET is particularly suitable for medium voltage power management and switching power supply applications. Its 100V VDS and low RDS(ON) ensure efficient power conversion and is suitable for use in power management modules such as DC-DC converters and switching power supplies.
2. **Motor Control**: In motor drive circuits, FQD24N08TM-VB is capable of handling high currents and medium voltages, and is suitable for DC motor drives and stepper motor control systems. Its current capability of up to 40A and low on-resistance ensure efficient control during motor startup and operation.
3. **LED Drive**: In LED lighting systems, FQD24N08TM-VB can be used in efficient LED drive circuits. Low on-resistance and high current handling capability improve the energy efficiency and life of LED systems, making them suitable for driving high-power LED lamps.
4. **Battery Management System (BMS)**: In battery management systems, especially in protection and balancing circuits for lithium-ion battery packs, the high current handling capability and low RDS(ON) of FQD24N08TM-VB enable it to effectively manage large battery packs and ensure the safety and reliability of the system.
FQD24N08TM-VB MOSFET meets the needs of high current and efficient power control with its excellent performance. Its Trench technology provides low power consumption and high efficiency, making it excel in multiple application areas.
FQD24N08TM-VB MOSFET is suitable for various fields and modules due to its high performance characteristics. Here are some specific application examples:
1. **Power Management**: This MOSFET is particularly suitable for medium voltage power management and switching power supply applications. Its 100V VDS and low RDS(ON) ensure efficient power conversion and is suitable for use in power management modules such as DC-DC converters and switching power supplies.
2. **Motor Control**: In motor drive circuits, FQD24N08TM-VB is capable of handling high currents and medium voltages, and is suitable for DC motor drives and stepper motor control systems. Its current capability of up to 40A and low on-resistance ensure efficient control during motor startup and operation.
3. **LED Drive**: In LED lighting systems, FQD24N08TM-VB can be used in efficient LED drive circuits. Low on-resistance and high current handling capability improve the energy efficiency and life of LED systems, making them suitable for driving high-power LED lamps.
4. **Battery Management System (BMS)**: In battery management systems, especially in protection and balancing circuits for lithium-ion battery packs, the high current handling capability and low RDS(ON) of FQD24N08TM-VB enable it to effectively manage large battery packs and ensure the safety and reliability of the system.
FQD24N08TM-VB MOSFET meets the needs of high current and efficient power control with its excellent performance. Its Trench technology provides low power consumption and high efficiency, making it excel in multiple application areas.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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