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FQD1P50-VB Product details
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FQD1P50-VB MOSFET Overview
The FQD1P50-VB is a single P-channel MOSFET in a TO-252 package for high voltage power management and switching applications. The device has high voltage withstand capability and moderate on-resistance, making it suitable for applications requiring stable high voltage switching.
The FQD1P50-VB is a single P-channel MOSFET in a TO-252 package for high voltage power management and switching applications. The device has high voltage withstand capability and moderate on-resistance, making it suitable for applications requiring stable high voltage switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | 3900mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -500V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -3V
- **On-resistance (RDS(ON)):** 4875mΩ @ VGS = 4.5V
- **On-resistance (RDS(ON)):** 3900mΩ @ VGS = 10V
- **Drain current (ID):** -2A
- **Technology:** Planar technology (Plannar)
FQD1P50-VB adopts planar technology, which is suitable for high voltage applications. Its higher on-resistance and larger drain-source voltage capability make it suitable for medium current high voltage switching applications.
- **Package:** TO-252
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -500V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -3V
- **On-resistance (RDS(ON)):** 4875mΩ @ VGS = 4.5V
- **On-resistance (RDS(ON)):** 3900mΩ @ VGS = 10V
- **Drain current (ID):** -2A
- **Technology:** Planar technology (Plannar)
FQD1P50-VB adopts planar technology, which is suitable for high voltage applications. Its higher on-resistance and larger drain-source voltage capability make it suitable for medium current high voltage switching applications.
Domain and module applications：
Application Examples
**1. High-voltage power management: **
- FQD1P50-VB can be used in high-voltage power management modules. Its 500V drain-source voltage enables it to operate stably in high-voltage environments, making it particularly suitable for power switches and voltage regulator modules, providing efficient power control and protection.
**2. Motor control systems: **
- In high-voltage motor control applications, the negative drain current and high voltage withstand capability of this MOSFET make it suitable for motor drive systems that require high-voltage switches, especially in industrial motors and automation equipment.
**3. DC-DC converters: **
- For high-voltage DC-DC converters, FQD1P50-VB is able to handle voltages up to 500V, making it ideal for use as the negative switch in high-voltage boost or buck converters to achieve efficient energy conversion.
**4. LED drive circuit:**
- Although the on-resistance of FQD1P50-VB is high, its high voltage characteristics still make it suitable for high-voltage LED drive applications. In LED lighting systems that require high-voltage switching, it can be used for negative switching in LED drive circuits to ensure system reliability and stability.
**5. Inverter applications:**
- In inverter circuits such as solar inverters or uninterruptible power supplies (UPS), the high voltage capability of FQD1P50-VB ensures that the inverter can handle high voltage input while providing stable switching performance, helping to improve the overall efficiency and reliability of the inverter.
**1. High-voltage power management: **
- FQD1P50-VB can be used in high-voltage power management modules. Its 500V drain-source voltage enables it to operate stably in high-voltage environments, making it particularly suitable for power switches and voltage regulator modules, providing efficient power control and protection.
**2. Motor control systems: **
- In high-voltage motor control applications, the negative drain current and high voltage withstand capability of this MOSFET make it suitable for motor drive systems that require high-voltage switches, especially in industrial motors and automation equipment.
**3. DC-DC converters: **
- For high-voltage DC-DC converters, FQD1P50-VB is able to handle voltages up to 500V, making it ideal for use as the negative switch in high-voltage boost or buck converters to achieve efficient energy conversion.
**4. LED drive circuit:**
- Although the on-resistance of FQD1P50-VB is high, its high voltage characteristics still make it suitable for high-voltage LED drive applications. In LED lighting systems that require high-voltage switching, it can be used for negative switching in LED drive circuits to ensure system reliability and stability.
**5. Inverter applications:**
- In inverter circuits such as solar inverters or uninterruptible power supplies (UPS), the high voltage capability of FQD1P50-VB ensures that the inverter can handle high voltage input while providing stable switching performance, helping to improve the overall efficiency and reliability of the inverter.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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