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FQD1P50TM-VB Product details
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FQD1P50TM-VB MOSFET Product Introduction
**FQD1P50TM-VB** is a single-tube P-type MOSFET in TO-252 package, manufactured using Plannar technology. This MOSFET has a drain-source voltage (VDS) tolerance of up to -500V and a gate-source voltage (VGS) range of ±20V, suitable for high-voltage switching applications. Its threshold voltage (Vth) is -3V, and the on-resistance (RDS(ON)) is 3900mΩ at VGS = 10V, and 4875mΩ at VGS = 4.5V. The maximum drain current (ID) is -2A, suitable for scenarios requiring higher voltage and medium current.
**FQD1P50TM-VB** is a single-tube P-type MOSFET in TO-252 package, manufactured using Plannar technology. This MOSFET has a drain-source voltage (VDS) tolerance of up to -500V and a gate-source voltage (VGS) range of ±20V, suitable for high-voltage switching applications. Its threshold voltage (Vth) is -3V, and the on-resistance (RDS(ON)) is 3900mΩ at VGS = 10V, and 4875mΩ at VGS = 4.5V. The maximum drain current (ID) is -2A, suitable for scenarios requiring higher voltage and medium current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | 3900mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -500V | -3V | -2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
- **Package**: TO-252
- **Configuration**: Single tube P type
- **VDS (drain-source voltage)**: -500V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -3V
- **RDS(ON) (on-resistance)**:
- 4875mΩ @ VGS = 4.5V
- 3900mΩ @ VGS = 10V
- **ID (continuous leakage current)**: -2A
- **Technology**: Plannar
- **Package**: TO-252
- **Configuration**: Single tube P type
- **VDS (drain-source voltage)**: -500V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -3V
- **RDS(ON) (on-resistance)**:
- 4875mΩ @ VGS = 4.5V
- 3900mΩ @ VGS = 10V
- **ID (continuous leakage current)**: -2A
- **Technology**: Plannar
Domain and module applications：
Application Examples
**FQD1P50TM-VB** MOSFET is suitable for a variety of high voltage applications. Here are some typical areas and modules:
1. **High Voltage Switching Power Supply**: In high voltage switching mode power supplies (SMPS), FQD1P50TM-VB can be used as a switching element, capable of handling voltages up to -500V, ensuring high efficiency and stability of the power supply, and suitable for power supply designs that require high voltage tolerance.
2. **Battery Protection Circuit**: This MOSFET can be used in high voltage battery protection circuits, which can effectively manage and protect high voltage battery packs and ensure safe charging and discharging operations.
3. **High Voltage Load Switch**: In load control applications that require high voltage switching, such as load switches in industrial equipment and electrical systems, FQD1P50TM-VB provides reliable switching functions and current handling capabilities.
4. **Inverter Application**: In inverter modules, especially in high voltage inverter systems such as solar inverters, FQD1P50TM-VB can handle high voltage switching operations to ensure stable power conversion and efficient energy output.
These applications demonstrate the wide applicability and reliability of FQD1P50TM-VB in high voltage switching and current handling.
**FQD1P50TM-VB** MOSFET is suitable for a variety of high voltage applications. Here are some typical areas and modules:
1. **High Voltage Switching Power Supply**: In high voltage switching mode power supplies (SMPS), FQD1P50TM-VB can be used as a switching element, capable of handling voltages up to -500V, ensuring high efficiency and stability of the power supply, and suitable for power supply designs that require high voltage tolerance.
2. **Battery Protection Circuit**: This MOSFET can be used in high voltage battery protection circuits, which can effectively manage and protect high voltage battery packs and ensure safe charging and discharging operations.
3. **High Voltage Load Switch**: In load control applications that require high voltage switching, such as load switches in industrial equipment and electrical systems, FQD1P50TM-VB provides reliable switching functions and current handling capabilities.
4. **Inverter Application**: In inverter modules, especially in high voltage inverter systems such as solar inverters, FQD1P50TM-VB can handle high voltage switching operations to ensure stable power conversion and efficient energy output.
These applications demonstrate the wide applicability and reliability of FQD1P50TM-VB in high voltage switching and current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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