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FQD1N80-VB Product details
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FQD1N80-VB MOSFET Product Introduction
FQD1N80-VB is a high voltage N-channel MOSFET in TO252 package, designed for applications requiring high voltage resistance and high reliability. This MOSFET uses SJ_Multi-EPI technology, providing excellent voltage resistance and stable performance. Its maximum drain-source voltage of 800V and continuous drain current capability of 2A make it suitable for switching applications in high voltage environments. Although its RDS(ON) value is relatively high, its high voltage withstand capability and good technology make it superior in specific high voltage applications.
FQD1N80-VB is a high voltage N-channel MOSFET in TO252 package, designed for applications requiring high voltage resistance and high reliability. This MOSFET uses SJ_Multi-EPI technology, providing excellent voltage resistance and stable performance. Its maximum drain-source voltage of 800V and continuous drain current capability of 2A make it suitable for switching applications in high voltage environments. Although its RDS(ON) value is relatively high, its high voltage withstand capability and good technology make it superior in specific high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FQD1N80-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2600mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 800V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2600mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI
Domain and module applications：
FQD1N80-VB MOSFET Applications and Module Examples
1. **High Voltage Switch**:
- FQD1N80-VB performs well in high voltage switching applications and is suitable for switches in high voltage DC-DC converters and power management systems. Despite its high on-resistance, its high withstand voltage characteristics make it suitable for use in high voltage environments.
2. **Power Protection**:
- In power protection circuits, such as overvoltage protection or overcurrent protection circuits, the high withstand voltage capability of FQD1N80-VB ensures reliability and safety under high voltage conditions. It can effectively prevent overvoltage problems in the circuit.
3. **High Voltage Power Module**:
- This MOSFET can be used in high voltage power modules, such as TV power supplies, industrial power supplies, etc., to provide stable switching functions and can withstand voltages up to 800V to ensure the normal operation of the system.
4. **Power Tools and Home Appliances**:
- In power tools and home appliances that require high voltage switching, the high withstand voltage characteristics of the FQD1N80-VB make it suitable for use as a switching element, ensuring safe and stable operation of the equipment in high voltage environments.
The high voltage capability and stability of the FQD1N80-VB MOSFET make it excel in high voltage and high power applications, making it an ideal choice for high voltage switching and protection circuits.
1. **High Voltage Switch**:
- FQD1N80-VB performs well in high voltage switching applications and is suitable for switches in high voltage DC-DC converters and power management systems. Despite its high on-resistance, its high withstand voltage characteristics make it suitable for use in high voltage environments.
2. **Power Protection**:
- In power protection circuits, such as overvoltage protection or overcurrent protection circuits, the high withstand voltage capability of FQD1N80-VB ensures reliability and safety under high voltage conditions. It can effectively prevent overvoltage problems in the circuit.
3. **High Voltage Power Module**:
- This MOSFET can be used in high voltage power modules, such as TV power supplies, industrial power supplies, etc., to provide stable switching functions and can withstand voltages up to 800V to ensure the normal operation of the system.
4. **Power Tools and Home Appliances**:
- In power tools and home appliances that require high voltage switching, the high withstand voltage characteristics of the FQD1N80-VB make it suitable for use as a switching element, ensuring safe and stable operation of the equipment in high voltage environments.
The high voltage capability and stability of the FQD1N80-VB MOSFET make it excel in high voltage and high power applications, making it an ideal choice for high voltage switching and protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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