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FQD1N80TM-VB Product details
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1. Product Introduction
FQD1N80TM-VB is a single-channel N-type MOSFET in TO252 package, designed for high voltage applications. The MOSFET supports drain-source voltage (VDS) up to 800V and can handle a maximum drain current of 2A. Its threshold voltage (Vth) is 3.5V, ensuring reliable turn-on at appropriate gate-source voltage. Manufactured using SJ_Multi-EPI technology, FQD1N80TM-VB provides high voltage tolerance and higher on-resistance (RDS(ON)=2600mΩ@VGS=10V), suitable for applications requiring high breakdown voltage.
FQD1N80TM-VB is a single-channel N-type MOSFET in TO252 package, designed for high voltage applications. The MOSFET supports drain-source voltage (VDS) up to 800V and can handle a maximum drain current of 2A. Its threshold voltage (Vth) is 3.5V, ensuring reliable turn-on at appropriate gate-source voltage. Manufactured using SJ_Multi-EPI technology, FQD1N80TM-VB provides high voltage tolerance and higher on-resistance (RDS(ON)=2600mΩ@VGS=10V), suitable for applications requiring high breakdown voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI (multi-junction EPI technology)
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 800V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2600mΩ@VGS=10V
- **Maximum drain current (ID)**: 2A
- **Technology**: SJ_Multi-EPI (multi-junction EPI technology)
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
Domain and module applications：
3. Application fields and modules
The high voltage handling capability and reliable performance of FQD1N80TM-VB MOSFET make it very suitable in multiple fields and modules, including:
1. **High voltage power management**: This MOSFET is suitable for high voltage DC-DC converters and switching power supplies. It can handle voltages up to 800V, making it excellent in high voltage power management, especially suitable for power systems that require high breakdown voltage.
2. **Motor drive**: In motor drive applications that require high voltage and high current, such as industrial motors and high voltage motors, FQD1N80TM-VB can provide stable switching performance and high voltage protection to ensure reliable operation of the motor under various load conditions.
3. **Power switch**: In power switching and high voltage load switching applications, this MOSFET can be used as a high voltage switch, suitable for switch control scenarios that require high voltage protection and stability, such as power control and high voltage load switching systems.
4. **Electronic Transformer**: Due to its high voltage handling capability, FQD1N80TM-VB is also suitable for switching applications in electronic transformers, which can handle high voltage power supplies and ensure reliability and stability.
In general, FQD1N80TM-VB MOSFET is very suitable for applications such as high voltage power management, motor drive and power switching, which require high breakdown voltage and reliable performance, with its high voltage handling capability and stable switching performance.
The high voltage handling capability and reliable performance of FQD1N80TM-VB MOSFET make it very suitable in multiple fields and modules, including:
1. **High voltage power management**: This MOSFET is suitable for high voltage DC-DC converters and switching power supplies. It can handle voltages up to 800V, making it excellent in high voltage power management, especially suitable for power systems that require high breakdown voltage.
2. **Motor drive**: In motor drive applications that require high voltage and high current, such as industrial motors and high voltage motors, FQD1N80TM-VB can provide stable switching performance and high voltage protection to ensure reliable operation of the motor under various load conditions.
3. **Power switch**: In power switching and high voltage load switching applications, this MOSFET can be used as a high voltage switch, suitable for switch control scenarios that require high voltage protection and stability, such as power control and high voltage load switching systems.
4. **Electronic Transformer**: Due to its high voltage handling capability, FQD1N80TM-VB is also suitable for switching applications in electronic transformers, which can handle high voltage power supplies and ensure reliability and stability.
In general, FQD1N80TM-VB MOSFET is very suitable for applications such as high voltage power management, motor drive and power switching, which require high breakdown voltage and reliable performance, with its high voltage handling capability and stable switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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