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FQD1N80TF-VB Product details
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FQD1N80TF-VB Product Introduction
FQD1N80TF-VB is a single N-channel power MOSFET in TO252 package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 800V and supports a gate-source voltage (VGS) of up to ±30V. Its typical turn-on voltage is 3.5V, the on-resistance is 2600mΩ at VGS=10V, and the maximum drain current is 2A. FQD1N80TF-VB adopts SJ_Multi-EPI technology, providing high withstand voltage and stable switching performance. This makes it particularly suitable for switching control and power conversion applications in high voltage applications.
FQD1N80TF-VB is a single N-channel power MOSFET in TO252 package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 800V and supports a gate-source voltage (VGS) of up to ±30V. Its typical turn-on voltage is 3.5V, the on-resistance is 2600mΩ at VGS=10V, and the maximum drain current is 2A. FQD1N80TF-VB adopts SJ_Multi-EPI technology, providing high withstand voltage and stable switching performance. This makes it particularly suitable for switching control and power conversion applications in high voltage applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FQD1N80TF-VB Detailed parameter description
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, with good heat dissipation performance and compact size, suitable for a variety of electronic applications.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD1N80TF-VB is suitable for low-side switching applications and can effectively control load current.
3. **Drain-source voltage (VDS)**: 800V
The maximum drain-source voltage is 800V, enabling it to handle switch control in high voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltage of ±30V, ensuring stable operation and reliability in various applications.
5. **Throw Voltage (Vth)**: 3.5V
The typical turn-on voltage is 3.5V, which enables the MOSFET to be effectively turned on at a lower gate voltage, suitable for low voltage control applications.
6. **On-resistance (RDS(ON))**: 2600mΩ @ VGS=10V
At VGS=10V, the on-resistance is 2600mΩ, which is suitable for occasions requiring high voltage withstand capability, but the on-resistance is relatively high, mainly used in applications that do not require extremely low conduction losses.
7. **Drain Current (ID)**: 2A
The maximum drain current is 2A, suitable for medium current switching applications.
8. **Technology**: SJ_Multi-EPI
Using SJ_Multi-EPI technology, it provides high withstand voltage and stable switching performance, suitable for high voltage applications.
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, with good heat dissipation performance and compact size, suitable for a variety of electronic applications.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, the FQD1N80TF-VB is suitable for low-side switching applications and can effectively control load current.
3. **Drain-source voltage (VDS)**: 800V
The maximum drain-source voltage is 800V, enabling it to handle switch control in high voltage environments.
4. **Gate-source voltage (VGS)**: ±30V
Supports gate-source voltage of ±30V, ensuring stable operation and reliability in various applications.
5. **Throw Voltage (Vth)**: 3.5V
The typical turn-on voltage is 3.5V, which enables the MOSFET to be effectively turned on at a lower gate voltage, suitable for low voltage control applications.
6. **On-resistance (RDS(ON))**: 2600mΩ @ VGS=10V
At VGS=10V, the on-resistance is 2600mΩ, which is suitable for occasions requiring high voltage withstand capability, but the on-resistance is relatively high, mainly used in applications that do not require extremely low conduction losses.
7. **Drain Current (ID)**: 2A
The maximum drain current is 2A, suitable for medium current switching applications.
8. **Technology**: SJ_Multi-EPI
Using SJ_Multi-EPI technology, it provides high withstand voltage and stable switching performance, suitable for high voltage applications.
Domain and module applications：
Application fields and module examples
1. **High voltage switching power supply**:
FQD1N80TF-VB can be used as the main switching device in high voltage switching power supply to control the switching state of the power supply. Due to its drain-source voltage of up to 800V, it is particularly suitable for power conversion and regulation that needs to handle high voltage.
2. **Lighting control**:
This MOSFET can be used in high voltage lighting control systems, such as high voltage halogen lamps or high voltage LED lamp drivers, to control the switching state and brightness adjustment of lamps.
3. **Motor drive**:
In applications that require high voltage motor drive, such as high voltage motors or industrial motor drivers, FQD1N80TF-VB can be used as a switch controller to handle the start and stop of the motor.
4. **Power regulator**:
This MOSFET is suitable for high voltage power regulators to control the switching and regulation of power, and performs well in scenarios that require high voltage handling capabilities.
5. **Power Protection Circuit**:
In high voltage power protection circuits, FQD1N80TF-VB can be used as an overvoltage protection switch to ensure that the power system can be safely shut down under abnormal conditions.
These application examples demonstrate the wide applicability of FQD1N80TF-VB in high voltage switch control and power conversion, especially in power management and control systems that require high voltage tolerance.
1. **High voltage switching power supply**:
FQD1N80TF-VB can be used as the main switching device in high voltage switching power supply to control the switching state of the power supply. Due to its drain-source voltage of up to 800V, it is particularly suitable for power conversion and regulation that needs to handle high voltage.
2. **Lighting control**:
This MOSFET can be used in high voltage lighting control systems, such as high voltage halogen lamps or high voltage LED lamp drivers, to control the switching state and brightness adjustment of lamps.
3. **Motor drive**:
In applications that require high voltage motor drive, such as high voltage motors or industrial motor drivers, FQD1N80TF-VB can be used as a switch controller to handle the start and stop of the motor.
4. **Power regulator**:
This MOSFET is suitable for high voltage power regulators to control the switching and regulation of power, and performs well in scenarios that require high voltage handling capabilities.
5. **Power Protection Circuit**:
In high voltage power protection circuits, FQD1N80TF-VB can be used as an overvoltage protection switch to ensure that the power system can be safely shut down under abnormal conditions.
These application examples demonstrate the wide applicability of FQD1N80TF-VB in high voltage switch control and power conversion, especially in power management and control systems that require high voltage tolerance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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