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FQD1N60C-VB Product details
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1. Product Introduction
FQD1N60C-VB is a high voltage N-channel MOSFET in TO-252 package, designed for high voltage and medium current applications. Its maximum drain-source voltage is 650V, suitable for switching and power regulation in high voltage environments. Using SJ_Multi-EPI technology, this MOSFET provides reliable current carrying capacity and low on-resistance, enabling stable switching performance at higher voltages, and is widely used in power management, high voltage switching, and industrial control.
FQD1N60C-VB is a high voltage N-channel MOSFET in TO-252 package, designed for high voltage and medium current applications. Its maximum drain-source voltage is 650V, suitable for switching and power regulation in high voltage environments. Using SJ_Multi-EPI technology, this MOSFET provides reliable current carrying capacity and low on-resistance, enabling stable switching performance at higher voltages, and is widely used in power management, high voltage switching, and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO-252
The TO-252 package is suitable for surface mounting, has good heat dissipation performance and mechanical strength, and is suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle positive voltage load switching and control.
- **Maximum drain-source voltage (VDS)**: 650V
The maximum drain-source voltage is 650V, which can withstand high voltage environments and is suitable for high voltage applications.
- **Maximum gate-source voltage (VGS)**: ±30V
Supports gate-source voltage of ±30V, providing a large operating range and design tolerance.
- **Threshold voltage (Vth)**: 3.5V
The on-voltage is 3.5V, which is suitable for applications with medium gate drive voltage, improving switching performance and response speed.
- **On-resistance (RDS(ON))**:
- **1000mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 1000mΩ, ensuring reliable conduction and relatively low power consumption.
- **Maximum drain current (ID)**: 5A
The maximum drain current is 5A, suitable for switching applications with medium current load.
- **Technology**: SJ_Multi-EPI
Using SJ_Multi-EPI technology, it has good current carrying capability and high voltage tolerance, suitable for high voltage applications.
- **Package type**: TO-252
The TO-252 package is suitable for surface mounting, has good heat dissipation performance and mechanical strength, and is suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle positive voltage load switching and control.
- **Maximum drain-source voltage (VDS)**: 650V
The maximum drain-source voltage is 650V, which can withstand high voltage environments and is suitable for high voltage applications.
- **Maximum gate-source voltage (VGS)**: ±30V
Supports gate-source voltage of ±30V, providing a large operating range and design tolerance.
- **Threshold voltage (Vth)**: 3.5V
The on-voltage is 3.5V, which is suitable for applications with medium gate drive voltage, improving switching performance and response speed.
- **On-resistance (RDS(ON))**:
- **1000mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 1000mΩ, ensuring reliable conduction and relatively low power consumption.
- **Maximum drain current (ID)**: 5A
The maximum drain current is 5A, suitable for switching applications with medium current load.
- **Technology**: SJ_Multi-EPI
Using SJ_Multi-EPI technology, it has good current carrying capability and high voltage tolerance, suitable for high voltage applications.
Domain and module applications：
3. Application fields and module description
1. **Power management**: FQD1N60C-VB performs well in power management systems, especially for high-voltage DC-DC converters and power regulation circuits. Its 650V drain-source voltage capability and low on-resistance make it suitable for high-voltage power switches and protection circuits, improving the stability and efficiency of the system.
2. **High-voltage switch**: Due to its high voltage tolerance, FQD1N60C-VB is very suitable for use as a high-voltage switch, such as inverter switch, power switch and other high-voltage switch applications. Its stable switching performance and low on-resistance can effectively handle high-voltage loads, ensuring the reliability and efficiency of the switch.
3. **Industrial control**: In industrial control systems, this MOSFET can be used for high-voltage motor drives, power regulation and automation control. Its high voltage and medium current capabilities make it an important switch and regulation element in industrial control systems, ensuring reliable operation and precise control of the system.
4. **Welding power supply**: FQD1N60C-VB is suitable for high-voltage welding power supply and related applications. Its high voltage tolerance and stable conduction performance enable it to cope with the high voltage and high current requirements in the welding process, ensuring the stability and reliability of the welding process.
5. **Home appliance power supply**: This MOSFET can also be used for high-voltage switches in home appliance power supplies, such as power management and switch control of high-power home appliances such as electric water heaters and electric ovens. Its high voltage handling capability and reliability ensure the stable operation of home appliances.
These application scenarios demonstrate the wide applicability and high-efficiency performance of FQD1N60C-VB in high voltage and medium current environments.
1. **Power management**: FQD1N60C-VB performs well in power management systems, especially for high-voltage DC-DC converters and power regulation circuits. Its 650V drain-source voltage capability and low on-resistance make it suitable for high-voltage power switches and protection circuits, improving the stability and efficiency of the system.
2. **High-voltage switch**: Due to its high voltage tolerance, FQD1N60C-VB is very suitable for use as a high-voltage switch, such as inverter switch, power switch and other high-voltage switch applications. Its stable switching performance and low on-resistance can effectively handle high-voltage loads, ensuring the reliability and efficiency of the switch.
3. **Industrial control**: In industrial control systems, this MOSFET can be used for high-voltage motor drives, power regulation and automation control. Its high voltage and medium current capabilities make it an important switch and regulation element in industrial control systems, ensuring reliable operation and precise control of the system.
4. **Welding power supply**: FQD1N60C-VB is suitable for high-voltage welding power supply and related applications. Its high voltage tolerance and stable conduction performance enable it to cope with the high voltage and high current requirements in the welding process, ensuring the stability and reliability of the welding process.
5. **Home appliance power supply**: This MOSFET can also be used for high-voltage switches in home appliance power supplies, such as power management and switch control of high-power home appliances such as electric water heaters and electric ovens. Its high voltage handling capability and reliability ensure the stable operation of home appliances.
These application scenarios demonstrate the wide applicability and high-efficiency performance of FQD1N60C-VB in high voltage and medium current environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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