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FQD19N10TM-VB Product details
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FQD19N10TM-VB MOSFET Product Introduction
FQD19N10TM-VB is a high-performance single N-channel MOSFET designed in TO-252 package, suitable for applications requiring efficient switching and power management. The MOSFET has a drain-source voltage (VDS) of 100V, making it reliable in medium voltage range. The gate-source voltage (VGS) is ±20V, ensuring stability under various operating conditions. Its threshold voltage (Vth) is 1.8V, ensuring fast switching capability at low gate drive voltage. FQD19N10TM-VB uses Trench technology, and the on-resistance (RDS(ON)) at 10V gate voltage is 114mΩ, which reduces power consumption and improves efficiency. It can carry a continuous drain current (ID) of 15A, suitable for medium and high current applications.
FQD19N10TM-VB is a high-performance single N-channel MOSFET designed in TO-252 package, suitable for applications requiring efficient switching and power management. The MOSFET has a drain-source voltage (VDS) of 100V, making it reliable in medium voltage range. The gate-source voltage (VGS) is ±20V, ensuring stability under various operating conditions. Its threshold voltage (Vth) is 1.8V, ensuring fast switching capability at low gate drive voltage. FQD19N10TM-VB uses Trench technology, and the on-resistance (RDS(ON)) at 10V gate voltage is 114mΩ, which reduces power consumption and improves efficiency. It can carry a continuous drain current (ID) of 15A, suitable for medium and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of FQD19N10TM-VB
1. **Package**: TO-252
- Compact and has good heat dissipation performance, suitable for surface mounting.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high-side or low-side switching applications.
3. **Drain-Source Voltage (VDS)**: 100V
- The maximum drain-to-source voltage that the MOSFET can withstand, suitable for medium voltage applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and the source to control the switching state of the MOSFET.
5. **Threshold Voltage (Vth)**: 1.8V
- The minimum gate voltage required to turn on the MOSFET, a lower threshold voltage allows a lower drive voltage.
6. **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- The drain-to-source resistance when the MOSFET is fully turned on, affecting power loss and current efficiency.
7. **Continuous drain current (ID)**: 15A
- The maximum current that a MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using Trench technology, it has low on-resistance and high switching efficiency.
1. **Package**: TO-252
- Compact and has good heat dissipation performance, suitable for surface mounting.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, suitable for high-side or low-side switching applications.
3. **Drain-Source Voltage (VDS)**: 100V
- The maximum drain-to-source voltage that the MOSFET can withstand, suitable for medium voltage applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and the source to control the switching state of the MOSFET.
5. **Threshold Voltage (Vth)**: 1.8V
- The minimum gate voltage required to turn on the MOSFET, a lower threshold voltage allows a lower drive voltage.
6. **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
- The drain-to-source resistance when the MOSFET is fully turned on, affecting power loss and current efficiency.
7. **Continuous drain current (ID)**: 15A
- The maximum current that a MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using Trench technology, it has low on-resistance and high switching efficiency.
Domain and module applications：
Application Examples of FQD19N10TM-VB
FQD19N10TM-VB MOSFET is suitable for multiple fields and modules with its high performance characteristics. Here are some specific application examples:
1. **Power Management**: This MOSFET is very suitable for medium voltage power management and switching power supplies. Its 100V VDS and low RDS(ON) ensure efficient power conversion and minimal power consumption, suitable for use in power converters and DC-DC converters.
2. **Motor Control**: In motor control systems, FQD19N10TM-VB can be used to drive DC motors and stepper motors. Its 15A continuous current capability and efficient switching characteristics enable it to provide reliable control in motor starting, operation and regulation.
3. **LED Lighting**: In LED drivers, this MOSFET is used to control high-power LED lamps. Its low on-resistance and high efficiency reduce power consumption and improve the overall performance and life of the LED system.
4. **Battery Management System (BMS)**: In battery management systems, especially for protection and balancing circuits of lithium-ion battery packs, the high current handling capability and low RDS(ON) of FQD19N10TM-VB make it suitable for safety management and performance optimization of battery packs.
FQD19N10TM-VB MOSFET performs well in various applications due to its superior performance. The low power consumption and high efficiency brought by its Trench technology make it an ideal choice for medium voltage and high current control.
FQD19N10TM-VB MOSFET is suitable for multiple fields and modules with its high performance characteristics. Here are some specific application examples:
1. **Power Management**: This MOSFET is very suitable for medium voltage power management and switching power supplies. Its 100V VDS and low RDS(ON) ensure efficient power conversion and minimal power consumption, suitable for use in power converters and DC-DC converters.
2. **Motor Control**: In motor control systems, FQD19N10TM-VB can be used to drive DC motors and stepper motors. Its 15A continuous current capability and efficient switching characteristics enable it to provide reliable control in motor starting, operation and regulation.
3. **LED Lighting**: In LED drivers, this MOSFET is used to control high-power LED lamps. Its low on-resistance and high efficiency reduce power consumption and improve the overall performance and life of the LED system.
4. **Battery Management System (BMS)**: In battery management systems, especially for protection and balancing circuits of lithium-ion battery packs, the high current handling capability and low RDS(ON) of FQD19N10TM-VB make it suitable for safety management and performance optimization of battery packs.
FQD19N10TM-VB MOSFET performs well in various applications due to its superior performance. The low power consumption and high efficiency brought by its Trench technology make it an ideal choice for medium voltage and high current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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