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FQD19N10L-VB Product details
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FQD19N10L-VB MOSFET Overview
The FQD19N10L-VB is a high performance single N-channel MOSFET in a TO-252 package suitable for medium and high voltage power management and switching applications. The device provides excellent switching performance and efficient energy conversion capabilities due to its low on-resistance and low threshold voltage.
The FQD19N10L-VB is a high performance single N-channel MOSFET in a TO-252 package suitable for medium and high voltage power management and switching applications. The device provides excellent switching performance and efficient energy conversion capabilities due to its low on-resistance and low threshold voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.8V
- **On-resistance (RDS(ON)):** 114mΩ @ VGS = 10V
- **Drain current (ID):** 15A
- **Technology:** Trench technology
FQD19N10L-VB uses trench technology to optimize electrical performance, providing low on-resistance and lower gate charge, enabling it to excel in high-efficiency switching and power conversion applications.
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 100V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.8V
- **On-resistance (RDS(ON)):** 114mΩ @ VGS = 10V
- **Drain current (ID):** 15A
- **Technology:** Trench technology
FQD19N10L-VB uses trench technology to optimize electrical performance, providing low on-resistance and lower gate charge, enabling it to excel in high-efficiency switching and power conversion applications.
Domain and module applications：
Application Examples
**1. Power Management Module: **
- FQD19N10L-VB is suitable for efficient power management in switch mode power supply (SMPS). Its 100V drain-source voltage and low on-resistance enable it to effectively reduce power loss and improve power conversion efficiency when handling medium current and high voltage applications.
**2. Motor Drive System: **
- In motor control circuits, the 15A drain current capability and low threshold voltage of this MOSFET make it very suitable for medium voltage motor drive applications, especially in situations where efficient switching and low power loss are required, such as motor control systems in industrial automation and consumer electronics.
**3. DC-DC Converter: **
- FQD19N10L-VB is suitable for a variety of DC-DC converters and can effectively handle buck or boost applications. Its low on-resistance and lower threshold voltage help improve conversion efficiency and reduce power loss.
**4. LED driver circuit:**
- In LED driver applications, FQD19N10L-VB can provide stable current control, especially in high brightness and medium power LED lighting systems. Its low on-resistance helps improve driver efficiency and ensure long life and reliability of LEDs.
**5. Inverter application:**
- For inverter circuits, such as solar inverters or uninterruptible power supplies (UPS), FQD19N10L-VB's 100V drain-source voltage and high current capability ensure system stability and efficient energy conversion, and its low power loss helps improve overall system performance.
**1. Power Management Module: **
- FQD19N10L-VB is suitable for efficient power management in switch mode power supply (SMPS). Its 100V drain-source voltage and low on-resistance enable it to effectively reduce power loss and improve power conversion efficiency when handling medium current and high voltage applications.
**2. Motor Drive System: **
- In motor control circuits, the 15A drain current capability and low threshold voltage of this MOSFET make it very suitable for medium voltage motor drive applications, especially in situations where efficient switching and low power loss are required, such as motor control systems in industrial automation and consumer electronics.
**3. DC-DC Converter: **
- FQD19N10L-VB is suitable for a variety of DC-DC converters and can effectively handle buck or boost applications. Its low on-resistance and lower threshold voltage help improve conversion efficiency and reduce power loss.
**4. LED driver circuit:**
- In LED driver applications, FQD19N10L-VB can provide stable current control, especially in high brightness and medium power LED lighting systems. Its low on-resistance helps improve driver efficiency and ensure long life and reliability of LEDs.
**5. Inverter application:**
- For inverter circuits, such as solar inverters or uninterruptible power supplies (UPS), FQD19N10L-VB's 100V drain-source voltage and high current capability ensure system stability and efficient energy conversion, and its low power loss helps improve overall system performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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