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FQD18N20V2TM-VB Product details
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FQD18N20V2TM-VB MOSFET Product Introduction
**FQD18N20V2TM-VB** is a high-performance single-tube N-type MOSFET in TO-252 package, manufactured using Trench technology. This MOSFET has a drain-source voltage (VDS) tolerance of 200V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 3V. At VGS = 10V, the on-resistance (RDS(ON)) is 55mΩ, and it can withstand a maximum leakage current (ID) of 30A. Its high voltage and high current handling capabilities make it suitable for a variety of switching applications requiring high efficiency.
**FQD18N20V2TM-VB** is a high-performance single-tube N-type MOSFET in TO-252 package, manufactured using Trench technology. This MOSFET has a drain-source voltage (VDS) tolerance of 200V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 3V. At VGS = 10V, the on-resistance (RDS(ON)) is 55mΩ, and it can withstand a maximum leakage current (ID) of 30A. Its high voltage and high current handling capabilities make it suitable for a variety of switching applications requiring high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | 55mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package**: TO-252
- **Configuration**: Single tube N-type
- **VDS (drain-source voltage)**: 200V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**: 55mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 30A
- **Technology**: Trench
- **Package**: TO-252
- **Configuration**: Single tube N-type
- **VDS (drain-source voltage)**: 200V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 3V
- **RDS(ON) (on-resistance)**: 55mΩ @ VGS = 10V
- **ID (continuous leakage current)**: 30A
- **Technology**: Trench
Domain and module applications：
Application Examples
**FQD18N20V2TM-VB** MOSFET performs well in high voltage and high current applications and is suitable for the following fields and modules:
1. **High Efficiency Power Management**: In high power switch mode power supplies (SMPS), FQD18N20V2TM-VB acts as the main switching element, which can provide low on-resistance and high current handling capability, thereby improving the overall efficiency and stability of the power supply.
2. **Motor Control System**: This MOSFET is suitable for motor drive circuits that need to handle high voltage and high current, such as industrial drive applications and automotive motor control, to ensure stable operation and high efficiency of the motor.
3. **Battery Management System (BMS)**: In battery protection and management systems, FQD18N20V2TM-VB can reliably handle the switching operation of high voltage battery packs, providing guarantees for the safe and reliable operation of the battery.
4. **Inverter and Power Conversion**: In inverter modules (such as those used in solar inverters), the FQD18N20V2TM-VB can efficiently handle high voltage and high current power conversion, ensuring stable power output and high efficiency.
These applications demonstrate the wide applicability and reliability of the FQD18N20V2TM-VB in a variety of high voltage, high current environments.
**FQD18N20V2TM-VB** MOSFET performs well in high voltage and high current applications and is suitable for the following fields and modules:
1. **High Efficiency Power Management**: In high power switch mode power supplies (SMPS), FQD18N20V2TM-VB acts as the main switching element, which can provide low on-resistance and high current handling capability, thereby improving the overall efficiency and stability of the power supply.
2. **Motor Control System**: This MOSFET is suitable for motor drive circuits that need to handle high voltage and high current, such as industrial drive applications and automotive motor control, to ensure stable operation and high efficiency of the motor.
3. **Battery Management System (BMS)**: In battery protection and management systems, FQD18N20V2TM-VB can reliably handle the switching operation of high voltage battery packs, providing guarantees for the safe and reliable operation of the battery.
4. **Inverter and Power Conversion**: In inverter modules (such as those used in solar inverters), the FQD18N20V2TM-VB can efficiently handle high voltage and high current power conversion, ensuring stable power output and high efficiency.
These applications demonstrate the wide applicability and reliability of the FQD18N20V2TM-VB in a variety of high voltage, high current environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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