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FQD17N08L-VB Product details
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FQD17N08L-VB Product Introduction
FQD17N08L-VB is a single N-channel power MOSFET in TO252 package. Designed for efficient switching control, the device has a drain-source voltage (VDS) of 100V and supports a gate-source voltage (VGS) of ±20V. Its typical turn-on voltage is 1.8V, and the on-resistance is 114mΩ at VGS=10V. The maximum drain current is 15A, and the Trench process technology is used to provide excellent current handling capability and low conduction loss. FQD17N08L-VB is suitable for power management and switch control applications requiring high voltage resistance and high efficiency.
FQD17N08L-VB is a single N-channel power MOSFET in TO252 package. Designed for efficient switching control, the device has a drain-source voltage (VDS) of 100V and supports a gate-source voltage (VGS) of ±20V. Its typical turn-on voltage is 1.8V, and the on-resistance is 114mΩ at VGS=10V. The maximum drain current is 15A, and the Trench process technology is used to provide excellent current handling capability and low conduction loss. FQD17N08L-VB is suitable for power management and switch control applications requiring high voltage resistance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FQD17N08L-VB Detailed parameter description
1. **Package type**: TO252
The device adopts TO252 package, which is suitable for surface mounting, with good heat dissipation performance and compact size, suitable for space-constrained application environment.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, FQD17N08L-VB is suitable for low-side switch applications and can effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 100V
The maximum drain-source voltage is 100V, which is suitable for high-voltage power management and switch control applications.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltage of ±20V to ensure the stability and reliability of MOSFET in various applications.
5. **Throw-on voltage (Vth)**: 1.8V
The typical turn-on voltage is 1.8V, which enables the MOSFET to be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
At VGS=10V, the on-resistance is 114mΩ, providing lower conduction loss and efficient power conversion.
7. **Drain current (ID)**: 15A
The maximum drain current is 15A, suitable for medium power switching applications.
8. **Technology**: Trench
Using Trench process technology, it has lower on-resistance and higher switching speed, improving overall performance and efficiency.
1. **Package type**: TO252
The device adopts TO252 package, which is suitable for surface mounting, with good heat dissipation performance and compact size, suitable for space-constrained application environment.
2. **Polarity**: Single N-channel
As a single N-channel MOSFET, FQD17N08L-VB is suitable for low-side switch applications and can effectively control the flow of current.
3. **Drain-source voltage (VDS)**: 100V
The maximum drain-source voltage is 100V, which is suitable for high-voltage power management and switch control applications.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltage of ±20V to ensure the stability and reliability of MOSFET in various applications.
5. **Throw-on voltage (Vth)**: 1.8V
The typical turn-on voltage is 1.8V, which enables the MOSFET to be effectively turned on at a lower gate voltage, improving switching efficiency.
6. **On-resistance (RDS(ON))**: 114mΩ @ VGS=10V
At VGS=10V, the on-resistance is 114mΩ, providing lower conduction loss and efficient power conversion.
7. **Drain current (ID)**: 15A
The maximum drain current is 15A, suitable for medium power switching applications.
8. **Technology**: Trench
Using Trench process technology, it has lower on-resistance and higher switching speed, improving overall performance and efficiency.
Domain and module applications：
Application fields and module examples
1. **Power management module**:
FQD17N08L-VB can be used as a low-side switch in the power management module to control the current flow in the DC-DC converter, optimize the power conversion efficiency and provide stable current control.
2. **LED driver**:
In LED driver applications, this MOSFET can be used as a switch controller, especially for occasions requiring high efficiency and low conduction loss, to ensure stable brightness and high efficiency of LED lights.
3. **Motor driver**:
FQD17N08L-VB is suitable for motor control modules, such as stepper motors or DC motor drivers, as a low-side switch to control the operation of the motor, providing reliable current control and switching performance.
4. **Switching power supply**:
In the switching power supply, this device can be used as a power switch to handle the efficient switching and regulation of the power supply, ensuring the high efficiency and stability of the power supply system.
5. **Automotive Electronics**:
FQD17N08L-VB can be used in automotive electronic systems, such as battery management and power distribution systems, as an efficient switching device to control current flow, improving the reliability and performance of automotive electronic equipment.
These application examples demonstrate the wide applicability of FQD17N08L-VB in high-efficiency switching and power management, especially in power and control systems that require high withstand voltage and low conduction loss.
1. **Power management module**:
FQD17N08L-VB can be used as a low-side switch in the power management module to control the current flow in the DC-DC converter, optimize the power conversion efficiency and provide stable current control.
2. **LED driver**:
In LED driver applications, this MOSFET can be used as a switch controller, especially for occasions requiring high efficiency and low conduction loss, to ensure stable brightness and high efficiency of LED lights.
3. **Motor driver**:
FQD17N08L-VB is suitable for motor control modules, such as stepper motors or DC motor drivers, as a low-side switch to control the operation of the motor, providing reliable current control and switching performance.
4. **Switching power supply**:
In the switching power supply, this device can be used as a power switch to handle the efficient switching and regulation of the power supply, ensuring the high efficiency and stability of the power supply system.
5. **Automotive Electronics**:
FQD17N08L-VB can be used in automotive electronic systems, such as battery management and power distribution systems, as an efficient switching device to control current flow, improving the reliability and performance of automotive electronic equipment.
These application examples demonstrate the wide applicability of FQD17N08L-VB in high-efficiency switching and power management, especially in power and control systems that require high withstand voltage and low conduction loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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