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FQD17N08LTM-VB Product details
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1. Product Introduction
FQD17N08LTM-VB is a high-performance N-channel MOSFET in TO-252 package, designed for high voltage and medium current applications. Its maximum drain-source voltage is 100V, suitable for switching and power regulation in medium and high voltage environments. Using advanced Trench technology, this MOSFET provides low on-resistance and excellent switching performance, and can achieve efficient conduction and switching at lower gate voltages. It is widely used in power management, motor drives and other electronic modules.
FQD17N08LTM-VB is a high-performance N-channel MOSFET in TO-252 package, designed for high voltage and medium current applications. Its maximum drain-source voltage is 100V, suitable for switching and power regulation in medium and high voltage environments. Using advanced Trench technology, this MOSFET provides low on-resistance and excellent switching performance, and can achieve efficient conduction and switching at lower gate voltages. It is widely used in power management, motor drives and other electronic modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO-252
The TO-252 package is suitable for surface mounting, has good thermal management and mechanical strength, and is suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle positive voltage load switching and control.
- **Maximum drain-source voltage (VDS)**: 100V
The maximum drain-source voltage is 100V, making it suitable for medium and high voltage applications.
- **Maximum gate-source voltage (VGS)**: ±20V
Supporting gate-source voltage of ±20V provides a flexible operating range and a large design tolerance.
- **Threshold voltage (Vth)**: 1.8V
The on-voltage is 1.8V, which is suitable for applications with low gate drive voltage and improves the switching response speed.
- **On-resistance (RDS(ON))**:
- **114mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 114mΩ, providing low energy loss and high-efficiency performance.
- **Maximum drain current (ID)**: 15A
The maximum drain current is 15A, suitable for applications with medium current load.
- **Technology**: Trench
Using trench technology, it has low on-resistance and excellent switching performance, suitable for high-efficiency applications.
- **Package type**: TO-252
The TO-252 package is suitable for surface mounting, has good thermal management and mechanical strength, and is suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is used to handle positive voltage load switching and control.
- **Maximum drain-source voltage (VDS)**: 100V
The maximum drain-source voltage is 100V, making it suitable for medium and high voltage applications.
- **Maximum gate-source voltage (VGS)**: ±20V
Supporting gate-source voltage of ±20V provides a flexible operating range and a large design tolerance.
- **Threshold voltage (Vth)**: 1.8V
The on-voltage is 1.8V, which is suitable for applications with low gate drive voltage and improves the switching response speed.
- **On-resistance (RDS(ON))**:
- **114mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 114mΩ, providing low energy loss and high-efficiency performance.
- **Maximum drain current (ID)**: 15A
The maximum drain current is 15A, suitable for applications with medium current load.
- **Technology**: Trench
Using trench technology, it has low on-resistance and excellent switching performance, suitable for high-efficiency applications.
Domain and module applications：
3. Application fields and module description
1. **Power management**: FQD17N08LTM-VB performs well in power management systems, especially in DC-DC converters and high-voltage power switches. Its 100V drain-source voltage capability and low on-resistance make it ideal for power regulation and high-efficiency switching applications, improving system efficiency and stability.
2. **Motor driver**: This MOSFET is suitable for motor drive applications such as stepper motor and DC motor control. Its maximum drain current of 15A and on-resistance of 114mΩ provide high-efficiency motor drive, ensuring stable motor control and efficient operation.
3. **High-efficiency switching**: Due to its low on-resistance and excellent switching performance, FQD17N08LTM-VB is suitable for high-efficiency switching applications such as high-voltage load switching, inverter switching and power regulation. Its low power consumption and fast response make it an ideal switching solution.
4. **Battery Management System**: In the battery management system, FQD17N08LTM-VB can be used as a battery switch and protection circuit. Its high voltage tolerance and low on-resistance help protect the battery from overcurrent and overheating, enhancing the safety and life of the battery.
5. **Automotive Electronics**: This MOSFET performs well in automotive electronic systems such as power window control, on-board power management, and other electric devices. Its 100V withstand voltage capability and 15A current handling capability make it suitable for a variety of automotive electronic applications, providing reliable and efficient switching control.
These application scenarios demonstrate the wide applicability and excellent performance of FQD17N08LTM-VB in medium and high voltage and medium current environments.
1. **Power management**: FQD17N08LTM-VB performs well in power management systems, especially in DC-DC converters and high-voltage power switches. Its 100V drain-source voltage capability and low on-resistance make it ideal for power regulation and high-efficiency switching applications, improving system efficiency and stability.
2. **Motor driver**: This MOSFET is suitable for motor drive applications such as stepper motor and DC motor control. Its maximum drain current of 15A and on-resistance of 114mΩ provide high-efficiency motor drive, ensuring stable motor control and efficient operation.
3. **High-efficiency switching**: Due to its low on-resistance and excellent switching performance, FQD17N08LTM-VB is suitable for high-efficiency switching applications such as high-voltage load switching, inverter switching and power regulation. Its low power consumption and fast response make it an ideal switching solution.
4. **Battery Management System**: In the battery management system, FQD17N08LTM-VB can be used as a battery switch and protection circuit. Its high voltage tolerance and low on-resistance help protect the battery from overcurrent and overheating, enhancing the safety and life of the battery.
5. **Automotive Electronics**: This MOSFET performs well in automotive electronic systems such as power window control, on-board power management, and other electric devices. Its 100V withstand voltage capability and 15A current handling capability make it suitable for a variety of automotive electronic applications, providing reliable and efficient switching control.
These application scenarios demonstrate the wide applicability and excellent performance of FQD17N08LTM-VB in medium and high voltage and medium current environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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