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FQD16N25C-VB Product details
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FQD16N25C-VB MOSFET Product Introduction
FQD16N25C-VB is a high-performance single N-channel MOSFET packaged in TO-252, designed for applications requiring high withstand voltage and low on-resistance. With a drain-source voltage (VDS) of 250V, this MOSFET is suitable for high-voltage power supply circuits. Its gate-source voltage (VGS) is ±20V, ensuring the stability of the MOSFET under various operating conditions. The threshold voltage (Vth) is 3.5V, providing reliable switching performance. Using Trench technology, this MOSFET has an on-resistance (RDS(ON)) of 176mΩ at a gate voltage of 10V, reducing power consumption and improving efficiency. With a continuous drain current (ID) of 17A, it is suitable for applications requiring high current.
FQD16N25C-VB is a high-performance single N-channel MOSFET packaged in TO-252, designed for applications requiring high withstand voltage and low on-resistance. With a drain-source voltage (VDS) of 250V, this MOSFET is suitable for high-voltage power supply circuits. Its gate-source voltage (VGS) is ±20V, ensuring the stability of the MOSFET under various operating conditions. The threshold voltage (Vth) is 3.5V, providing reliable switching performance. Using Trench technology, this MOSFET has an on-resistance (RDS(ON)) of 176mΩ at a gate voltage of 10V, reducing power consumption and improving efficiency. With a continuous drain current (ID) of 17A, it is suitable for applications requiring high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of FQD16N25C-VB
1. **Package**: TO-252
- Compact and good heat dissipation, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, typically used in switching applications in power circuits.
3. **Drain-Source Voltage (VDS)**: 250V
- The maximum drain-to-source voltage that the MOSFET can withstand, suitable for high voltage applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and source, used to control the MOSFET.
5. **Threshold Voltage (Vth)**: 3.5V
- The minimum gate voltage required to turn on the MOSFET.
6. **On-resistance (RDS(ON))**: 176mΩ @ VGS=10V
- The resistance from drain to source when the MOSFET is fully turned on, affecting power loss.
7. **Continuous drain current (ID)**: 17A
- The maximum current that a MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using Trench technology to reduce on-resistance, improve switching efficiency and power density.
1. **Package**: TO-252
- Compact and good heat dissipation, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, typically used in switching applications in power circuits.
3. **Drain-Source Voltage (VDS)**: 250V
- The maximum drain-to-source voltage that the MOSFET can withstand, suitable for high voltage applications.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and source, used to control the MOSFET.
5. **Threshold Voltage (Vth)**: 3.5V
- The minimum gate voltage required to turn on the MOSFET.
6. **On-resistance (RDS(ON))**: 176mΩ @ VGS=10V
- The resistance from drain to source when the MOSFET is fully turned on, affecting power loss.
7. **Continuous drain current (ID)**: 17A
- The maximum current that a MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using Trench technology to reduce on-resistance, improve switching efficiency and power density.
Domain and module applications：
Application Examples of FQD16N25C-VB
FQD16N25C-VB MOSFET has a wide range of applications in multiple fields due to its high withstand voltage, low on-resistance and high current handling capability. Here are some specific application examples:
1. **High Voltage Power Module**: This MOSFET is ideal for high voltage power modules such as 250V power converters and switching power supplies. Its high VDS and low RDS(ON) enable it to efficiently handle high voltage and high current while reducing power loss.
2. **Motor Control**: In motor control circuits such as DC motor drives and motor control systems, FQD16N25C-VB is able to handle high current and high voltage, providing reliable switching control. Its high current capability and low on-resistance ensure high efficiency and stability of motor control.
3. **LED Driver**: In high-efficiency LED drivers, FQD16N25C-VB can be used to drive high-power LED lamps. Low on-resistance helps reduce energy loss and improves the energy efficiency and life of LED systems.
4. **Battery Management System (BMS)**: In battery management systems, especially in the management of high-voltage lithium-ion battery packs, FQD16N25C-VB can be used as a protection and balancing circuit. Its high voltage resistance and high current handling capabilities make it suitable for safe management of large battery packs.
FQD16N25C-VB MOSFET meets the needs of high-voltage, high-current applications with its excellent performance. Its Trench technology ensures low power loss and high efficiency, making it excellent in applications in multiple fields.
FQD16N25C-VB MOSFET has a wide range of applications in multiple fields due to its high withstand voltage, low on-resistance and high current handling capability. Here are some specific application examples:
1. **High Voltage Power Module**: This MOSFET is ideal for high voltage power modules such as 250V power converters and switching power supplies. Its high VDS and low RDS(ON) enable it to efficiently handle high voltage and high current while reducing power loss.
2. **Motor Control**: In motor control circuits such as DC motor drives and motor control systems, FQD16N25C-VB is able to handle high current and high voltage, providing reliable switching control. Its high current capability and low on-resistance ensure high efficiency and stability of motor control.
3. **LED Driver**: In high-efficiency LED drivers, FQD16N25C-VB can be used to drive high-power LED lamps. Low on-resistance helps reduce energy loss and improves the energy efficiency and life of LED systems.
4. **Battery Management System (BMS)**: In battery management systems, especially in the management of high-voltage lithium-ion battery packs, FQD16N25C-VB can be used as a protection and balancing circuit. Its high voltage resistance and high current handling capabilities make it suitable for safe management of large battery packs.
FQD16N25C-VB MOSFET meets the needs of high-voltage, high-current applications with its excellent performance. Its Trench technology ensures low power loss and high efficiency, making it excellent in applications in multiple fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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