中文
English
FQD16N25CTF-VB Product details
Back to previous pageProduct introduction：
FQD16N25CTF-VB MOSFET Overview
The FQD16N25CTF-VB is a single N-channel MOSFET in a TO-252 package suitable for high-efficiency switching applications requiring high voltage and medium current. The device provides excellent electrical performance and low on-resistance to meet the requirements of high-voltage power management and power conversion.
The FQD16N25CTF-VB is a single N-channel MOSFET in a TO-252 package suitable for high-efficiency switching applications requiring high voltage and medium current. The device provides excellent electrical performance and low on-resistance to meet the requirements of high-voltage power management and power conversion.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | 176mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3.5V | 17A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 250V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 176mΩ @ VGS = 10V
- **Drain current (ID):** 17A
- **Technology:** Trench technology
FQD16N25CTF-VB adopts trench technology to optimize the electrical characteristics of MOSFET, so that it has low on-resistance and lower gate charge, which can provide higher switching efficiency and less power loss.
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 250V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3.5V
- **On-resistance (RDS(ON)):** 176mΩ @ VGS = 10V
- **Drain current (ID):** 17A
- **Technology:** Trench technology
FQD16N25CTF-VB adopts trench technology to optimize the electrical characteristics of MOSFET, so that it has low on-resistance and lower gate charge, which can provide higher switching efficiency and less power loss.
Domain and module applications：
Application Examples
**1. Power Management Module: **
- FQD16N25CTF-VB is suitable for high voltage power management applications in switch mode power supplies (SMPS). Its high drain-source voltage of 250V and low on-resistance enable it to effectively handle high voltage and medium current situations, improve power conversion efficiency and reduce energy loss.
**2. Motor Drive System: **
- In motor control circuits, FQD16N25CTF-VB can meet the needs of high voltage motor drive. Its 17A drain current capability and 250V drain-source voltage make it suitable for high efficiency motor drive systems in industrial automation and automotive applications.
**3. DC-DC Converter: **
- This MOSFET is suitable for various DC-DC converters, such as buck and boost converters. Its low on-resistance and high voltage tolerance help improve conversion efficiency, especially in situations where high voltage and high current are required.
**4. LED driver circuit:**
- In high-power LED driver applications, FQD16N25CTF-VB provides efficient current control for high-brightness lighting and industrial lighting systems. Its low on-resistance helps improve the efficiency and reliability of LED drivers.
**5. Inverter applications:**
- For applications such as solar inverters and uninterruptible power supplies (UPS), the high voltage and high current capabilities of FQD16N25CTF-VB ensure system stability and efficient energy conversion. Its low on-resistance reduces power loss and improves overall system performance.
**1. Power Management Module: **
- FQD16N25CTF-VB is suitable for high voltage power management applications in switch mode power supplies (SMPS). Its high drain-source voltage of 250V and low on-resistance enable it to effectively handle high voltage and medium current situations, improve power conversion efficiency and reduce energy loss.
**2. Motor Drive System: **
- In motor control circuits, FQD16N25CTF-VB can meet the needs of high voltage motor drive. Its 17A drain current capability and 250V drain-source voltage make it suitable for high efficiency motor drive systems in industrial automation and automotive applications.
**3. DC-DC Converter: **
- This MOSFET is suitable for various DC-DC converters, such as buck and boost converters. Its low on-resistance and high voltage tolerance help improve conversion efficiency, especially in situations where high voltage and high current are required.
**4. LED driver circuit:**
- In high-power LED driver applications, FQD16N25CTF-VB provides efficient current control for high-brightness lighting and industrial lighting systems. Its low on-resistance helps improve the efficiency and reliability of LED drivers.
**5. Inverter applications:**
- For applications such as solar inverters and uninterruptible power supplies (UPS), the high voltage and high current capabilities of FQD16N25CTF-VB ensure system stability and efficient energy conversion. Its low on-resistance reduces power loss and improves overall system performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
