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FQD13N06TM-VB Product details
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1. Product Introduction
FQD13N06TM-VB is a single-channel N-type MOSFET in TO252 package, designed for high-efficiency power switching and management applications. This MOSFET supports a maximum drain-source voltage (VDS) of 60V and can handle a drain current of up to 18A. Its threshold voltage (Vth) is 1.7V, allowing the device to turn on at a lower gate-source voltage. Manufactured using Trench technology, it has a lower on-resistance (RDS(ON)=73mΩ@VGS=10V), which can improve power efficiency and reduce energy loss.
FQD13N06TM-VB is a single-channel N-type MOSFET in TO252 package, designed for high-efficiency power switching and management applications. This MOSFET supports a maximum drain-source voltage (VDS) of 60V and can handle a drain current of up to 18A. Its threshold voltage (Vth) is 1.7V, allowing the device to turn on at a lower gate-source voltage. Manufactured using Trench technology, it has a lower on-resistance (RDS(ON)=73mΩ@VGS=10V), which can improve power efficiency and reduce energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ@VGS=4.5V
- 73mΩ@VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench (trench technology)
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ@VGS=4.5V
- 73mΩ@VGS=10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench (trench technology)
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
Domain and module applications：
3. Application fields and modules
The excellent performance of FQD13N06TM-VB MOSFET makes it widely used in multiple fields and modules, as follows:
1. **Power management system**: This MOSFET performs well in DC-DC converters and switching power supplies, and can provide stable switching performance under high current load conditions. Its low on-resistance (RDS(ON)=73mΩ@VGS=10V) helps reduce power consumption and improve overall system efficiency.
2. **Motor control**: In motor drive applications, such as stepper motors and DC motor drives, FQD13N06TM-VB provides up to 18A of drain current capability and low on-resistance, ensuring stable operation of the motor under different load conditions, improving the performance and reliability of the motor control system.
3. **Load switch**: Suitable for various load switch applications, including switch control circuits for home appliances and industrial equipment. FQD13N06TM-VB is able to handle higher currents and provide low-loss switching functions, making load switching more efficient and reliable.
4. **Protection circuit**: This MOSFET is also suitable for battery protection circuits and overcurrent protection circuits, especially in application scenarios requiring higher current and low on-resistance, which can effectively prevent overcurrent from damaging the battery pack and other circuits and extend the service life of the system.
In general, FQD13N06TM-VB MOSFET is very suitable for various high-efficiency power management and load switching applications with its high current carrying capacity, low on-resistance and excellent switching performance.
The excellent performance of FQD13N06TM-VB MOSFET makes it widely used in multiple fields and modules, as follows:
1. **Power management system**: This MOSFET performs well in DC-DC converters and switching power supplies, and can provide stable switching performance under high current load conditions. Its low on-resistance (RDS(ON)=73mΩ@VGS=10V) helps reduce power consumption and improve overall system efficiency.
2. **Motor control**: In motor drive applications, such as stepper motors and DC motor drives, FQD13N06TM-VB provides up to 18A of drain current capability and low on-resistance, ensuring stable operation of the motor under different load conditions, improving the performance and reliability of the motor control system.
3. **Load switch**: Suitable for various load switch applications, including switch control circuits for home appliances and industrial equipment. FQD13N06TM-VB is able to handle higher currents and provide low-loss switching functions, making load switching more efficient and reliable.
4. **Protection circuit**: This MOSFET is also suitable for battery protection circuits and overcurrent protection circuits, especially in application scenarios requiring higher current and low on-resistance, which can effectively prevent overcurrent from damaging the battery pack and other circuits and extend the service life of the system.
In general, FQD13N06TM-VB MOSFET is very suitable for various high-efficiency power management and load switching applications with its high current carrying capacity, low on-resistance and excellent switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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