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FQD13N06TF-VB Product details
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FQD13N06TF-VB Product Introduction
FQD13N06TF-VB is a single N-channel power MOSFET in TO252 package. It has a drain-source voltage (VDS) of 60V and supports a gate-source voltage (VGS) of ±20V. The typical turn-on voltage of the device is 1.7V, and the on-resistance is 73mΩ at VGS=10V and 85mΩ at VGS=4.5V. The maximum drain current is 18A, and the Trench process technology is used to provide low on-resistance and high efficiency. This makes the FQD13N06TF-VB very suitable for efficient switching control and power management applications.
FQD13N06TF-VB is a single N-channel power MOSFET in TO252 package. It has a drain-source voltage (VDS) of 60V and supports a gate-source voltage (VGS) of ±20V. The typical turn-on voltage of the device is 1.7V, and the on-resistance is 73mΩ at VGS=10V and 85mΩ at VGS=4.5V. The maximum drain current is 18A, and the Trench process technology is used to provide low on-resistance and high efficiency. This makes the FQD13N06TF-VB very suitable for efficient switching control and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FQD13N06TF-VB Detailed parameter description
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, providing good heat dissipation and compact appearance, suitable for applications with limited space.
2. **Polarity**: Single N-channel
The device is a single N-channel MOSFET, suitable for low-side switch applications, capable of effectively controlling load current.
3. **Drain-source voltage (VDS)**: 60V
With a drain-source voltage of up to 60V, it is suitable for applications handling medium voltages.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltages of ±20V, ensuring stable operation and reliability in a variety of applications.
5. **Throw-on voltage (Vth)**: 1.7V
The typical turn-on voltage is 1.7V, which enables the MOSFET to be effectively turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**: 85mΩ @ VGS=4.5V; 73mΩ @ VGS=10V
At VGS=4.5V, the on-resistance is 85mΩ, and at VGS=10V it is 73mΩ, providing low conduction loss and improving power conversion efficiency.
7. **Drain current (ID)**: 18A
The maximum drain current is 18A, which is suitable for medium power switching applications.
8. **Technology**: Trench
Using Trench process technology, it provides low on-resistance and high switching speed, optimizing overall performance and efficiency.
1. **Package type**: TO252
The TO252 package is suitable for surface mounting, providing good heat dissipation and compact appearance, suitable for applications with limited space.
2. **Polarity**: Single N-channel
The device is a single N-channel MOSFET, suitable for low-side switch applications, capable of effectively controlling load current.
3. **Drain-source voltage (VDS)**: 60V
With a drain-source voltage of up to 60V, it is suitable for applications handling medium voltages.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltages of ±20V, ensuring stable operation and reliability in a variety of applications.
5. **Throw-on voltage (Vth)**: 1.7V
The typical turn-on voltage is 1.7V, which enables the MOSFET to be effectively turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**: 85mΩ @ VGS=4.5V; 73mΩ @ VGS=10V
At VGS=4.5V, the on-resistance is 85mΩ, and at VGS=10V it is 73mΩ, providing low conduction loss and improving power conversion efficiency.
7. **Drain current (ID)**: 18A
The maximum drain current is 18A, which is suitable for medium power switching applications.
8. **Technology**: Trench
Using Trench process technology, it provides low on-resistance and high switching speed, optimizing overall performance and efficiency.
Domain and module applications：
Application fields and module examples
1. **Power management module**:
FQD13N06TF-VB can be used as a low-side switch in power management modules, such as the switch of DC-DC converters, to ensure high-efficiency power conversion and stable current control.
2. **LED driver**:
In LED drivers, this MOSFET can be used as a switch controller, especially in scenarios where low on-resistance is required to improve system efficiency, to help manage the switching and brightness control of LED lights.
3. **Motor control**:
This device is suitable for motor control modules, such as DC motor drivers, as a low-side switch to control the start and stop of the motor, providing stable current and switching performance.
4. **Switching power supply**:
FQD13N06TF-VB can be used as a power switch in a switching power supply, handling the efficient switching and regulation of the power supply, ensuring the high efficiency and reliability of the power supply system.
5. **Automotive Electronics**:
In automotive electronic systems, such as battery management systems and power distribution systems, this MOSFET can be used as a load switch to control the flow of current and ensure stable operation of automotive electronic equipment.
These application examples demonstrate the wide applicability of FQD13N06TF-VB in low-side switching and power management, especially in power and control systems that require low on-resistance and high efficiency.
1. **Power management module**:
FQD13N06TF-VB can be used as a low-side switch in power management modules, such as the switch of DC-DC converters, to ensure high-efficiency power conversion and stable current control.
2. **LED driver**:
In LED drivers, this MOSFET can be used as a switch controller, especially in scenarios where low on-resistance is required to improve system efficiency, to help manage the switching and brightness control of LED lights.
3. **Motor control**:
This device is suitable for motor control modules, such as DC motor drivers, as a low-side switch to control the start and stop of the motor, providing stable current and switching performance.
4. **Switching power supply**:
FQD13N06TF-VB can be used as a power switch in a switching power supply, handling the efficient switching and regulation of the power supply, ensuring the high efficiency and reliability of the power supply system.
5. **Automotive Electronics**:
In automotive electronic systems, such as battery management systems and power distribution systems, this MOSFET can be used as a load switch to control the flow of current and ensure stable operation of automotive electronic equipment.
These application examples demonstrate the wide applicability of FQD13N06TF-VB in low-side switching and power management, especially in power and control systems that require low on-resistance and high efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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