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FQD13N06LTF-VB Product details
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1. Product Introduction
FQD13N06LTF-VB is a high-performance N-channel MOSFET in TO-252 package, designed for low voltage, high current applications. Its maximum drain-source voltage is 60V, suitable for medium and low voltage switching and power regulation. Using Trench technology, this MOSFET has excellent switching performance and low on-resistance, can provide high efficiency at a lower gate voltage, and is widely used in power management, motor drive and other electronic modules.
FQD13N06LTF-VB is a high-performance N-channel MOSFET in TO-252 package, designed for low voltage, high current applications. Its maximum drain-source voltage is 60V, suitable for medium and low voltage switching and power regulation. Using Trench technology, this MOSFET has excellent switching performance and low on-resistance, can provide high efficiency at a lower gate voltage, and is widely used in power management, motor drive and other electronic modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO-252
TO-252 is a surface mount package that provides good heat dissipation and durability, suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is suitable for load switching and regulation that handles positive voltages.
- **Maximum drain-source voltage (VDS)**: 60V
The maximum drain-source voltage is 60V, suitable for medium and low voltage applications.
- **Maximum gate-source voltage (VGS)**: ±20V
Supports gate-source voltages of ±20V, providing operational flexibility and greater design tolerance.
- **Threshold voltage (Vth)**: 1.7V
The on-voltage is 1.7V, suitable for applications with low gate drive voltages, improving efficiency and response speed.
- **On-resistance (RDS(ON))**:
- **85mΩ @ VGS = 4.5V**
At 4.5V gate drive voltage, the on-resistance is 85mΩ.
- **73mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is reduced to 73mΩ, providing lower energy loss.
- **Maximum drain current (ID)**: 18A
The maximum drain current is 18A, suitable for switching applications with medium current loads.
- **Technology**: Trench
Using trench technology, it has low on-resistance and efficient switching performance, suitable for high-performance applications.
- **Package type**: TO-252
TO-252 is a surface mount package that provides good heat dissipation and durability, suitable for medium power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is suitable for load switching and regulation that handles positive voltages.
- **Maximum drain-source voltage (VDS)**: 60V
The maximum drain-source voltage is 60V, suitable for medium and low voltage applications.
- **Maximum gate-source voltage (VGS)**: ±20V
Supports gate-source voltages of ±20V, providing operational flexibility and greater design tolerance.
- **Threshold voltage (Vth)**: 1.7V
The on-voltage is 1.7V, suitable for applications with low gate drive voltages, improving efficiency and response speed.
- **On-resistance (RDS(ON))**:
- **85mΩ @ VGS = 4.5V**
At 4.5V gate drive voltage, the on-resistance is 85mΩ.
- **73mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is reduced to 73mΩ, providing lower energy loss.
- **Maximum drain current (ID)**: 18A
The maximum drain current is 18A, suitable for switching applications with medium current loads.
- **Technology**: Trench
Using trench technology, it has low on-resistance and efficient switching performance, suitable for high-performance applications.
Domain and module applications：
3. Application fields and module description
1. **Power management**: FQD13N06LTF-VB performs well in power management systems, especially in DC-DC converters and low-voltage power switches. Its low on-resistance and high current handling capability make it suitable for power regulation and efficiency improvement.
2. **Motor driver**: This MOSFET is suitable for motor drive applications such as stepper motor and DC motor control. Its maximum drain current of 18A and low on-resistance can effectively drive the motor, providing reliable motor control and high efficiency.
3. **High-efficiency switch**: Due to its low on-resistance and good switching performance, FQD13N06LTF-VB is suitable for use as a high-efficiency switch application, such as high-efficiency power switch, load switching and voltage regulation. It can provide fast switching response and low power consumption.
4. **Battery management system**: In the battery management system, FQD13N06LTF-VB can be used for battery switch and protection circuit. Its low on-resistance and high current handling capability help protect the battery from overcurrent and overheating, extending battery life.
5. **Automotive Electronics**: This MOSFET performs well in automotive electronic systems such as power window control, on-board power management, and other electric devices. It can handle 18A of current and withstand 60V of voltage, suitable for a variety of automotive electronic applications.
These application scenarios demonstrate the wide applicability and excellent performance of FQD13N06LTF-VB in medium and low voltage, high current environments.
1. **Power management**: FQD13N06LTF-VB performs well in power management systems, especially in DC-DC converters and low-voltage power switches. Its low on-resistance and high current handling capability make it suitable for power regulation and efficiency improvement.
2. **Motor driver**: This MOSFET is suitable for motor drive applications such as stepper motor and DC motor control. Its maximum drain current of 18A and low on-resistance can effectively drive the motor, providing reliable motor control and high efficiency.
3. **High-efficiency switch**: Due to its low on-resistance and good switching performance, FQD13N06LTF-VB is suitable for use as a high-efficiency switch application, such as high-efficiency power switch, load switching and voltage regulation. It can provide fast switching response and low power consumption.
4. **Battery management system**: In the battery management system, FQD13N06LTF-VB can be used for battery switch and protection circuit. Its low on-resistance and high current handling capability help protect the battery from overcurrent and overheating, extending battery life.
5. **Automotive Electronics**: This MOSFET performs well in automotive electronic systems such as power window control, on-board power management, and other electric devices. It can handle 18A of current and withstand 60V of voltage, suitable for a variety of automotive electronic applications.
These application scenarios demonstrate the wide applicability and excellent performance of FQD13N06LTF-VB in medium and low voltage, high current environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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