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FQD12N20-VB Product details
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FQD12N20-VB MOSFET Product Introduction
FQD12N20-VB is a single N-channel MOSFET designed for efficient power management and switching applications. Packaged in TO-252, this MOSFET is suitable for space-constrained designs and features high withstand voltage and low on-resistance. Its drain-source voltage (VDS) is up to 200V and its gate-source voltage (VGS) is ±20V, ensuring stable operation in various power circuits. The threshold voltage (Vth) is 3V, providing stable switching performance. Its Trench technology reduces the on-resistance (RDS(ON)) to 245mΩ at 10V, optimizing power conversion efficiency and power loss. Able to withstand a continuous drain current (ID) of 10A, it excels in applications requiring efficient power conversion.
FQD12N20-VB is a single N-channel MOSFET designed for efficient power management and switching applications. Packaged in TO-252, this MOSFET is suitable for space-constrained designs and features high withstand voltage and low on-resistance. Its drain-source voltage (VDS) is up to 200V and its gate-source voltage (VGS) is ±20V, ensuring stable operation in various power circuits. The threshold voltage (Vth) is 3V, providing stable switching performance. Its Trench technology reduces the on-resistance (RDS(ON)) to 245mΩ at 10V, optimizing power conversion efficiency and power loss. Able to withstand a continuous drain current (ID) of 10A, it excels in applications requiring efficient power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of FQD12N20-VB
1. **Package**: TO-252
- Compact and good heat dissipation, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, typically used in high-side or low-side switching applications.
3. **Drain-Source Voltage (VDS)**: 200V
- The maximum drain-to-source voltage that the MOSFET can withstand.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and source to control the switching state of the MOSFET.
5. **Threshold Voltage (Vth)**: 3V
- The gate voltage required for the MOSFET to start conducting.
6. **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- The resistance from drain to source when the MOSFET is fully turned on, affecting power loss and efficiency.
7. **Continuous drain current (ID)**: 10A
- The maximum current that a MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using advanced Trench technology to reduce on-resistance and improve switching efficiency.
1. **Package**: TO-252
- Compact and good heat dissipation, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Single N-channel MOSFET, typically used in high-side or low-side switching applications.
3. **Drain-Source Voltage (VDS)**: 200V
- The maximum drain-to-source voltage that the MOSFET can withstand.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and source to control the switching state of the MOSFET.
5. **Threshold Voltage (Vth)**: 3V
- The gate voltage required for the MOSFET to start conducting.
6. **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- The resistance from drain to source when the MOSFET is fully turned on, affecting power loss and efficiency.
7. **Continuous drain current (ID)**: 10A
- The maximum current that a MOSFET can carry under continuous operation.
8. **Technology**: Trench
- Using advanced Trench technology to reduce on-resistance and improve switching efficiency.
Domain and module applications：
Application Examples of FQD12N20-VB
FQD12N20-VB MOSFET excels in many fields due to its high withstand voltage, low on-resistance and high current handling capability. Here are some specific application examples:
1. **Power Management**: This MOSFET is ideal for use in efficient switching power supplies and power conversion modules. In power supply systems that need to handle 200V input voltage, its high VDS rating and low RDS(ON) ensure efficient power conversion and minimal energy loss.
2. **Motor Drive**: In motor control circuits such as DC motor drivers and motor controllers, FQD12N20-VB is able to handle high currents and operate stably. Its high withstand voltage and low on-resistance make it an ideal choice for motor control in industrial and automotive applications.
3. **LED Drive**: In LED lighting systems, FQD12N20-VB can be used in efficient LED drive circuits. Its low on-resistance helps reduce power loss, extend the life of the LED, and improve the energy efficiency of the entire lighting system.
4. **Battery Management System (BMS)**: In lithium-ion battery management systems, FQD12N20-VB can be used for battery protection and balancing circuits. Its high voltage and current handling capabilities are suitable for the management needs of large-capacity battery packs, ensuring battery safety and reliability.
With its excellent performance, FQD12N20-VB MOSFET meets a variety of applications requiring efficient power control and stable switching operation. Its Trench technology ensures low power consumption and high efficiency, making it an excellent performer in energy-sensitive designs in multiple industries.
FQD12N20-VB MOSFET excels in many fields due to its high withstand voltage, low on-resistance and high current handling capability. Here are some specific application examples:
1. **Power Management**: This MOSFET is ideal for use in efficient switching power supplies and power conversion modules. In power supply systems that need to handle 200V input voltage, its high VDS rating and low RDS(ON) ensure efficient power conversion and minimal energy loss.
2. **Motor Drive**: In motor control circuits such as DC motor drivers and motor controllers, FQD12N20-VB is able to handle high currents and operate stably. Its high withstand voltage and low on-resistance make it an ideal choice for motor control in industrial and automotive applications.
3. **LED Drive**: In LED lighting systems, FQD12N20-VB can be used in efficient LED drive circuits. Its low on-resistance helps reduce power loss, extend the life of the LED, and improve the energy efficiency of the entire lighting system.
4. **Battery Management System (BMS)**: In lithium-ion battery management systems, FQD12N20-VB can be used for battery protection and balancing circuits. Its high voltage and current handling capabilities are suitable for the management needs of large-capacity battery packs, ensuring battery safety and reliability.
With its excellent performance, FQD12N20-VB MOSFET meets a variety of applications requiring efficient power control and stable switching operation. Its Trench technology ensures low power consumption and high efficiency, making it an excellent performer in energy-sensitive designs in multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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