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FQD12N20TF-VB Product details
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FQD12N20TF-VB MOSFET Overview
The FQD12N20TF-VB is a single N-channel MOSFET suitable for high voltage and high efficiency power management applications. Packaged in a TO-252 package, the device offers high voltage handling capability and low on-resistance, enabling reliable switching performance in applications requiring high voltage and high current.
The FQD12N20TF-VB is a single N-channel MOSFET suitable for high voltage and high efficiency power management applications. Packaged in a TO-252 package, the device offers high voltage handling capability and low on-resistance, enabling reliable switching performance in applications requiring high voltage and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 200V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 245mΩ @ VGS = 10V
- **Drain current (ID):** 10A
- **Technology:** Trench technology
FQD12N20TF-VB adopts trench technology to optimize electrical performance, reduce on-resistance and gate charge, thereby achieving higher switching speed and efficiency.
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 200V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 245mΩ @ VGS = 10V
- **Drain current (ID):** 10A
- **Technology:** Trench technology
FQD12N20TF-VB adopts trench technology to optimize electrical performance, reduce on-resistance and gate charge, thereby achieving higher switching speed and efficiency.
Domain and module applications：
Application Examples
**1. Power Conversion Module: **
- FQD12N20TF-VB is suitable for use in switch mode power supplies (SMPS), especially when high voltage and medium current need to be handled. Its low on-resistance helps improve the efficiency of power conversion and reduce power loss.
**2. Motor Drive Circuit: **
- In motor drive applications, the 200V drain-source voltage of FQD12N20TF-VB makes it very suitable for high-voltage motor control, especially in industrial automation and automotive applications, where efficient and stable switching performance is required to ensure the normal operation of the motor.
**3. DC-DC Converter: **
- This MOSFET is suitable for use in a variety of DC-DC converters, providing efficient power conversion solutions. Whether it is a buck or boost converter, the low on-resistance of FQD12N20TF-VB helps reduce power loss and improve conversion efficiency.
**4. LED Driver:**
- The high voltage rating and low on-resistance of FQD12N20TF-VB make it an ideal choice in high-power LED driver circuits. It is able to efficiently drive LEDs, especially in high-brightness lighting and industrial lighting applications, ensuring the reliability and long life of LED lamps.
**5. Inverter Circuit:**
- FQD12N20TF-VB is also suitable for inverter circuits, such as solar inverters or uninterruptible power supplies (UPS), where its high voltage and efficient switching capabilities are critical to ensuring stable operation and effective energy conversion of the system.
**1. Power Conversion Module: **
- FQD12N20TF-VB is suitable for use in switch mode power supplies (SMPS), especially when high voltage and medium current need to be handled. Its low on-resistance helps improve the efficiency of power conversion and reduce power loss.
**2. Motor Drive Circuit: **
- In motor drive applications, the 200V drain-source voltage of FQD12N20TF-VB makes it very suitable for high-voltage motor control, especially in industrial automation and automotive applications, where efficient and stable switching performance is required to ensure the normal operation of the motor.
**3. DC-DC Converter: **
- This MOSFET is suitable for use in a variety of DC-DC converters, providing efficient power conversion solutions. Whether it is a buck or boost converter, the low on-resistance of FQD12N20TF-VB helps reduce power loss and improve conversion efficiency.
**4. LED Driver:**
- The high voltage rating and low on-resistance of FQD12N20TF-VB make it an ideal choice in high-power LED driver circuits. It is able to efficiently drive LEDs, especially in high-brightness lighting and industrial lighting applications, ensuring the reliability and long life of LED lamps.
**5. Inverter Circuit:**
- FQD12N20TF-VB is also suitable for inverter circuits, such as solar inverters or uninterruptible power supplies (UPS), where its high voltage and efficient switching capabilities are critical to ensuring stable operation and effective energy conversion of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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