中文
English
FQD12N20LTM-VB Product details
Back to previous pageProduct introduction：
1. FQD12N20LTM-VB Product Introduction
FQD12N20LTM-VB is a single N-channel MOSFET in TO252 package, designed for high voltage applications, with excellent switching performance and reliability. It uses Trench technology, has high withstand voltage and low on-resistance, making it perform well in various power management and switching applications. Its high VDS and low RDS(ON) characteristics make it suitable for efficient power conversion and current management applications.
FQD12N20LTM-VB is a single N-channel MOSFET in TO252 package, designed for high voltage applications, with excellent switching performance and reliability. It uses Trench technology, has high withstand voltage and low on-resistance, making it perform well in various power management and switching applications. Its high VDS and low RDS(ON) characteristics make it suitable for efficient power conversion and current management applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. FQD12N20LTM-VB Detailed parameter description
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Drain current (ID)**: 10A
- **Technology type**: Trench
- **Package type**: TO252
- **Polarity configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Drain current (ID)**: 10A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and modules of FQD12N20LTM-VB
1. **Power conversion**: Due to its higher drain-source voltage (VDS) and lower on-resistance (RDS(ON)), FQD12N20LTM-VB is very suitable for use in high-voltage DC-DC converters and AC-DC converters to improve conversion efficiency and reduce power loss.
2. **Motor drive**: In the motor drive module, this MOSFET can handle larger currents and voltages, and is suitable for various industrial motor control systems and household appliance motor drive applications to improve motor performance and reliability.
3. **Power management system**: In the power management system, FQD12N20LTM-VB can effectively switch and regulate current for power distribution and load switching to ensure system stability and efficiency.
4. **Automotive Electronics**: The high withstand voltage characteristics of this MOSFET make it suitable for automotive electronic systems, such as battery management systems and on-board power control modules, ensuring the reliability and safety of automotive electrical systems.
1. **Power conversion**: Due to its higher drain-source voltage (VDS) and lower on-resistance (RDS(ON)), FQD12N20LTM-VB is very suitable for use in high-voltage DC-DC converters and AC-DC converters to improve conversion efficiency and reduce power loss.
2. **Motor drive**: In the motor drive module, this MOSFET can handle larger currents and voltages, and is suitable for various industrial motor control systems and household appliance motor drive applications to improve motor performance and reliability.
3. **Power management system**: In the power management system, FQD12N20LTM-VB can effectively switch and regulate current for power distribution and load switching to ensure system stability and efficiency.
4. **Automotive Electronics**: The high withstand voltage characteristics of this MOSFET make it suitable for automotive electronic systems, such as battery management systems and on-board power control modules, ensuring the reliability and safety of automotive electrical systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
