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FQD12N20LTF-VB Product details
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FQD12N20LTF-VB MOSFET Product Introduction
The FQD12N20LTF-VB is a high voltage N-channel MOSFET in a TO252 package designed for high voltage applications. It utilizes advanced Trench technology to provide low on-resistance and high withstand voltage characteristics, making it suitable for a variety of power management and switching applications. With a maximum drain-source voltage of 200V and a continuous drain current capability of 10A, this MOSFET is ideal for efficient current control in high voltage environments.
The FQD12N20LTF-VB is a high voltage N-channel MOSFET in a TO252 package designed for high voltage applications. It utilizes advanced Trench technology to provide low on-resistance and high withstand voltage characteristics, making it suitable for a variety of power management and switching applications. With a maximum drain-source voltage of 200V and a continuous drain current capability of 10A, this MOSFET is ideal for efficient current control in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
FQD12N20LTF-VB MOSFET Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 245mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 10A
- **Technology**: Trench
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 245mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 10A
- **Technology**: Trench
Domain and module applications：
FQD12N20LTF-VB MOSFET Applications and Module Examples
1. **High-voltage power switch**:
- FQD12N20LTF-VB is suitable for switching applications in high-voltage power modules. Its high withstand voltage and low RDS(ON) characteristics enable it to effectively reduce conduction losses and improve overall efficiency during power conversion.
2. **Electric vehicles and charging systems**:
- In the battery management system and charger of electric vehicles, FQD12N20LTF-VB can be used for high-voltage switches, providing reliable switching functions and protection to ensure safe and efficient power management.
3. **Industrial equipment and control circuits**:
- This MOSFET can be used as a core component for motor drives and load switches in industrial equipment. Its high voltage tolerance and stability ensure reliability and durability in high-power applications.
4. **High Power LED Driver**:
- In high power LED drivers, the FQD12N20LTF-VB can be used as a high voltage switch to ensure high efficiency and long life of the LED system, especially in applications that need to handle higher voltages.
The high voltage and high current capabilities of the FQD12N20LTF-VB MOSFET enable it to perform well in a variety of high voltage applications that require high efficiency and stability.
1. **High-voltage power switch**:
- FQD12N20LTF-VB is suitable for switching applications in high-voltage power modules. Its high withstand voltage and low RDS(ON) characteristics enable it to effectively reduce conduction losses and improve overall efficiency during power conversion.
2. **Electric vehicles and charging systems**:
- In the battery management system and charger of electric vehicles, FQD12N20LTF-VB can be used for high-voltage switches, providing reliable switching functions and protection to ensure safe and efficient power management.
3. **Industrial equipment and control circuits**:
- This MOSFET can be used as a core component for motor drives and load switches in industrial equipment. Its high voltage tolerance and stability ensure reliability and durability in high-power applications.
4. **High Power LED Driver**:
- In high power LED drivers, the FQD12N20LTF-VB can be used as a high voltage switch to ensure high efficiency and long life of the LED system, especially in applications that need to handle higher voltages.
The high voltage and high current capabilities of the FQD12N20LTF-VB MOSFET enable it to perform well in a variety of high voltage applications that require high efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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