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FQD12N10-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction
FQD12N10-VB is a single-channel N-type MOSFET in TO252 package, designed for high-efficiency power management and switching applications. The MOSFET has a drain-source breakdown voltage (VDS) of 100V and can handle drain currents up to 15A. Its threshold voltage (Vth) is 1.8V, ensuring that it can be turned on at low gate-source voltage. Manufactured with Trench technology, FQD12N10-VB has a lower on-resistance (RDS(ON)=114mΩ@VGS=10V), which improves switching efficiency and reduces power loss.
FQD12N10-VB is a single-channel N-type MOSFET in TO252 package, designed for high-efficiency power management and switching applications. The MOSFET has a drain-source breakdown voltage (VDS) of 100V and can handle drain currents up to 15A. Its threshold voltage (Vth) is 1.8V, ensuring that it can be turned on at low gate-source voltage. Manufactured with Trench technology, FQD12N10-VB has a lower on-resistance (RDS(ON)=114mΩ@VGS=10V), which improves switching efficiency and reduces power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ@VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
- **Package type**: TO252
- **Configuration**: Single channel N-type
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ@VGS=10V
- **Maximum drain current (ID)**: 15A
- **Technology**: Trench
- **Package size**: TO252 package is usually 6.60mm x 8.60mm
Domain and module applications：
3. Application fields and modules
The design of FQD12N10-VB MOSFET makes it suitable for a variety of high-efficiency applications, especially in the following fields and modules:
1. **Power management system**: In DC-DC converters and switching power supplies, FQD12N10-VB can provide efficient switching performance and low conduction loss, suitable for power conversion and voltage regulation circuits to improve overall power efficiency.
2. **Motor drive**: Suitable for various motor drive applications, such as stepper motors or DC motor drives, FQD12N10-VB can withstand high currents and maintain low on-resistance to ensure stable operation of the motor under different load conditions.
3. **Load switch**: In load switch modules, such as switch control circuits of household appliances or industrial equipment, this MOSFET can be used as a switching element to effectively control the switching operation of the load and improve the reliability and efficiency of the system.
4. **Protection circuit**: In battery protection circuits or overcurrent protection circuits, the high current handling capability and low on-resistance of the FQD12N10-VB enable it to effectively protect battery packs and other sensitive circuits from overcurrent or overheating damage.
In summary, the FQD12N10-VB MOSFET, with its high current carrying capability, low on-resistance and excellent switching performance, is suitable for a variety of applications requiring efficient power management and reliable load switching.
The design of FQD12N10-VB MOSFET makes it suitable for a variety of high-efficiency applications, especially in the following fields and modules:
1. **Power management system**: In DC-DC converters and switching power supplies, FQD12N10-VB can provide efficient switching performance and low conduction loss, suitable for power conversion and voltage regulation circuits to improve overall power efficiency.
2. **Motor drive**: Suitable for various motor drive applications, such as stepper motors or DC motor drives, FQD12N10-VB can withstand high currents and maintain low on-resistance to ensure stable operation of the motor under different load conditions.
3. **Load switch**: In load switch modules, such as switch control circuits of household appliances or industrial equipment, this MOSFET can be used as a switching element to effectively control the switching operation of the load and improve the reliability and efficiency of the system.
4. **Protection circuit**: In battery protection circuits or overcurrent protection circuits, the high current handling capability and low on-resistance of the FQD12N10-VB enable it to effectively protect battery packs and other sensitive circuits from overcurrent or overheating damage.
In summary, the FQD12N10-VB MOSFET, with its high current carrying capability, low on-resistance and excellent switching performance, is suitable for a variety of applications requiring efficient power management and reliable load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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