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FQD11P06TF-VB Product details
Back to previous pageProduct introduction：
FQD11P06TF-VB is a single P-channel power MOSFET in TO252 package. The device has a drain-source voltage (VDS) of -60V, supports gate-source voltage (VGS) up to ±20V, and has an on-resistance (RDS(ON)) as low as 61mΩ at VGS=10V. Its typical turn-on voltage is -1.7V, drain current is -30A, and it uses Trench process technology. These features make FQD11P06TF-VB very suitable for low-side switch applications that require high efficiency and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
FQD11P06TF-VB Detailed parameter description
1. **Package type**: TO252
FQD11P06TF-VB adopts TO252 package, which is suitable for surface mounting, with good heat dissipation performance and small size, suitable for space-constrained applications.
2. **Polarity**: Single P-channel
This device is a single P-channel MOSFET, suitable for high-side switch applications, which can effectively control the load current.
3. **Drain-source voltage (VDS)**: -60V
With a drain-source voltage of up to -60V, it is suitable for applications that handle higher voltages.
4. **Gate-source voltage (VGS)**: ±20V
It can withstand a gate-source voltage of ±20V to ensure stability and reliability in different applications.
5. **Throw-on voltage (Vth)**: -1.7V
The typical turn-on voltage is -1.7V, ensuring that the MOSFET can be effectively turned on at a lower gate voltage.
6. **On-resistance (RDS(ON))**: 100mΩ @ VGS=4.5V; 90mΩ @ VGS=10V
At VGS=4.5V, the on-resistance is 100mΩ, and at VGS=10V it is 90mΩ, providing low conduction loss and improving power conversion efficiency.
7. **Drain current (ID)**: -30A
The maximum drain current is -30A, suitable for medium and high power switching applications.
8. **Technology**: Trench
Using Trench process technology, it has lower on-resistance and higher switching speed, improving overall performance and efficiency.
Domain and module applications：
Application fields and module examples
1. **Power management module**:
FQD11P06TF-VB can be used as a high-side switch in the power management module to control the current flow to the power load, such as the output switch of the DC-DC converter, providing efficient power conversion and protection.
2. **LED driver**:
In the LED driver, this MOSFET can be used as a switch to control the LED lamp, especially in the scene that requires high efficiency and low conduction loss, to ensure the stability of the brightness of the LED lamp and the efficient use of power.
3. **Motor control**:
This device is suitable for motor control modules, such as stepper motor or DC motor drivers, as a high-side switch to control the running state of the motor, providing stable current control and switching performance.
4. **Load switch**:
In various load switch applications, such as home appliances or industrial equipment, this MOSFET can be used to control the opening and closing of the load, with low on-resistance and high current carrying capacity, ensuring efficient and reliable load management.
5. **Automotive Electronics**:
FQD11P06TF-VB can be used in automotive electronic systems, such as battery management and power distribution systems, to control high-power loads in cars and provide safe and reliable switching functions.
These application examples demonstrate the wide applicability of FQD11P06TF-VB in high-side switching and load management, especially in power and control systems that require high efficiency and low conduction losses.
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