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FQD10N20L-VB Product details
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1. Product Introduction
FQD10N20L-VB is a high voltage, high power N-channel MOSFET in TO-252 package, designed for high voltage and high current applications. This MOSFET has a drain-source voltage capability of 200V, suitable for high voltage circuits and power switching applications. Using advanced Trench technology, this MOSFET provides low on-resistance and excellent switching performance, and can achieve efficient conduction and switching at a lower gate voltage. It is widely used in power management, motor drive and high voltage switching.
FQD10N20L-VB is a high voltage, high power N-channel MOSFET in TO-252 package, designed for high voltage and high current applications. This MOSFET has a drain-source voltage capability of 200V, suitable for high voltage circuits and power switching applications. Using advanced Trench technology, this MOSFET provides low on-resistance and excellent switching performance, and can achieve efficient conduction and switching at a lower gate voltage. It is widely used in power management, motor drive and high voltage switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. Detailed parameter description
- **Package type**: TO-252
TO-252 is a surface mount package with good heat dissipation and durability, suitable for high power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is suitable for switching and load control that handles positive voltages.
- **Maximum drain-source voltage (VDS)**: 200V
The maximum drain-source voltage is 200V, which can withstand voltages up to 200V and is suitable for high voltage environment applications.
- **Maximum gate-source voltage (VGS)**: ±20V
Supports gate-source voltages of ±20V, providing a flexible operating range and a large design tolerance.
- **Threshold voltage (Vth)**: 3V
The on-voltage is 3V, which is suitable for application scenarios with medium gate drive voltages.
- **On-resistance (RDS(ON))**:
- **245mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 245mΩ, ensuring low energy loss and high efficiency.
- **Maximum drain current (ID)**: 10A
The maximum drain current is 10A, suitable for switching applications with medium current loads.
- **Technology**: Trench
Using trench technology, it provides low on-resistance and efficient switching performance, suitable for applications requiring high efficiency.
- **Package type**: TO-252
TO-252 is a surface mount package with good heat dissipation and durability, suitable for high power applications.
- **Polarity**: Single N-channel
As an N-channel MOSFET, the device is suitable for switching and load control that handles positive voltages.
- **Maximum drain-source voltage (VDS)**: 200V
The maximum drain-source voltage is 200V, which can withstand voltages up to 200V and is suitable for high voltage environment applications.
- **Maximum gate-source voltage (VGS)**: ±20V
Supports gate-source voltages of ±20V, providing a flexible operating range and a large design tolerance.
- **Threshold voltage (Vth)**: 3V
The on-voltage is 3V, which is suitable for application scenarios with medium gate drive voltages.
- **On-resistance (RDS(ON))**:
- **245mΩ @ VGS = 10V**
At 10V gate drive voltage, the on-resistance is 245mΩ, ensuring low energy loss and high efficiency.
- **Maximum drain current (ID)**: 10A
The maximum drain current is 10A, suitable for switching applications with medium current loads.
- **Technology**: Trench
Using trench technology, it provides low on-resistance and efficient switching performance, suitable for applications requiring high efficiency.
Domain and module applications：
3. Application fields and module description
1. **Power management**: FQD10N20L-VB performs well in power management systems, especially in DC-DC converters and high-voltage power switches. Its 200V withstand voltage and 245mΩ on-resistance make it very suitable for switching and regulating high-voltage power supplies, improving the efficiency and stability of the system.
2. **Motor driver**: This MOSFET is suitable for motor drive applications such as stepper motors and DC motor control. It is capable of handling currents up to 10A and is suitable for motor control circuits that require high power and efficient switching, providing reliable driving capabilities.
3. **High-voltage switch**: Due to its 200V drain-source voltage capability, FQD10N20L-VB is very suitable for use as a high-voltage switch. For example, it can be used in high-voltage load switching, inverter switching, and other high-voltage switching applications, where its low on-resistance reduces power consumption and improves switching efficiency.
4. **Battery protection circuit**: In battery protection circuits, the FQD10N20L-VB can be used to protect batteries from overcharge and overdischarge. Its high voltage handling capability and high current handling capability make it suitable for lithium battery protection circuits or other high voltage battery protection.
5. **Automotive electronics**: This MOSFET can be used in a variety of high voltage applications in automotive electronic systems, including automotive power management, power window control, and switch control circuits. Its high voltage and high current capabilities make it a reliable choice in automotive electronic systems.
These applications demonstrate the wide applicability and efficient performance of the FQD10N20L-VB in high voltage and high power environments.
1. **Power management**: FQD10N20L-VB performs well in power management systems, especially in DC-DC converters and high-voltage power switches. Its 200V withstand voltage and 245mΩ on-resistance make it very suitable for switching and regulating high-voltage power supplies, improving the efficiency and stability of the system.
2. **Motor driver**: This MOSFET is suitable for motor drive applications such as stepper motors and DC motor control. It is capable of handling currents up to 10A and is suitable for motor control circuits that require high power and efficient switching, providing reliable driving capabilities.
3. **High-voltage switch**: Due to its 200V drain-source voltage capability, FQD10N20L-VB is very suitable for use as a high-voltage switch. For example, it can be used in high-voltage load switching, inverter switching, and other high-voltage switching applications, where its low on-resistance reduces power consumption and improves switching efficiency.
4. **Battery protection circuit**: In battery protection circuits, the FQD10N20L-VB can be used to protect batteries from overcharge and overdischarge. Its high voltage handling capability and high current handling capability make it suitable for lithium battery protection circuits or other high voltage battery protection.
5. **Automotive electronics**: This MOSFET can be used in a variety of high voltage applications in automotive electronic systems, including automotive power management, power window control, and switch control circuits. Its high voltage and high current capabilities make it a reliable choice in automotive electronic systems.
These applications demonstrate the wide applicability and efficient performance of the FQD10N20L-VB in high voltage and high power environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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