中文
English
FQD10N20LTM-VB Product details
Back to previous pageProduct introduction：
FQD10N20LTM-VB MOSFET Product Introduction
The FQD10N20LTM-VB is a single N-channel MOSFET designed for efficient power management and switching applications. Housed in a TO-252 package, this device is ideal for space-constrained designs requiring efficient power control. With a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, this MOSFET provides robust operating performance in a variety of power circuits. Its gate threshold voltage (Vth) of 3V ensures stable switching behavior, while its Trench technology improves performance by reducing RDS(ON) to 245mΩ at 10V. Able to withstand continuous drain currents (ID) of up to 10A, it excels in applications requiring efficient power conversion and minimal energy losses.
The FQD10N20LTM-VB is a single N-channel MOSFET designed for efficient power management and switching applications. Housed in a TO-252 package, this device is ideal for space-constrained designs requiring efficient power control. With a drain-source voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V, this MOSFET provides robust operating performance in a variety of power circuits. Its gate threshold voltage (Vth) of 3V ensures stable switching behavior, while its Trench technology improves performance by reducing RDS(ON) to 245mΩ at 10V. Able to withstand continuous drain currents (ID) of up to 10A, it excels in applications requiring efficient power conversion and minimal energy losses.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of FQD10N20LTM-VB
1. **Package**: TO-252
- Compact and heat-efficient, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Uses a single N-channel MOSFET, typically used for high-side and low-side switches in power circuits.
3. **Drain-Source Voltage (VDS)**: 200V
- The maximum voltage that a MOSFET can block between the drain and source.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and source to control the MOSFET.
5. **Threshold Voltage (Vth)**: 3V
- The voltage required to turn the MOSFET on, providing a well-defined switching state.
6. **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- When the MOSFET is fully turned on, the resistance between the drain and the source affects the efficiency of power conduction.
7. **Continuous drain current (ID)**: 10A
- The maximum current that the MOSFET can conduct under continuous operation without damage.
8. **Technology**: Trench
- Advanced MOSFET technology that reduces on-resistance and improves overall efficiency, especially in high current applications.
1. **Package**: TO-252
- Compact and heat-efficient, suitable for surface mount applications.
2. **Configuration**: Single N-channel
- Uses a single N-channel MOSFET, typically used for high-side and low-side switches in power circuits.
3. **Drain-Source Voltage (VDS)**: 200V
- The maximum voltage that a MOSFET can block between the drain and source.
4. **Gate-Source Voltage (VGS)**: ±20V
- The maximum voltage that can be applied between the gate and source to control the MOSFET.
5. **Threshold Voltage (Vth)**: 3V
- The voltage required to turn the MOSFET on, providing a well-defined switching state.
6. **On-resistance (RDS(ON))**: 245mΩ @ VGS=10V
- When the MOSFET is fully turned on, the resistance between the drain and the source affects the efficiency of power conduction.
7. **Continuous drain current (ID)**: 10A
- The maximum current that the MOSFET can conduct under continuous operation without damage.
8. **Technology**: Trench
- Advanced MOSFET technology that reduces on-resistance and improves overall efficiency, especially in high current applications.
Domain and module applications：
Application Examples of FQD10N20LTM-VB
FQD10N20LTM-VB MOSFET has a wide range of applications in multiple fields due to its strong design and performance characteristics. Here are some specific examples:
1. **Power Module**: This MOSFET is well suited for use in power circuits, especially in switching power supplies, where efficient energy conversion is required. Its high VDS rating makes it suitable for 200V input power systems, while the low RDS(ON) ensures minimal energy loss during operation.
2. **Motor Control Circuit**: In motor control applications, especially in DC-DC converters and motor drivers, the FQD10N20LTM-VB provides reliable switching capabilities. Its ability to handle high currents and voltages makes it a good choice for motor control in industrial and automotive applications.
3. **LED Lighting System**: This MOSFET can be used in high-efficiency LED drivers, which require precise current control. Low on-resistance helps reduce power dissipation, which is critical to maintaining the life of the LED system.
4. **Battery Management System (BMS)**: In battery management systems, especially for lithium-ion batteries, the FQD10N20LTM-VB can be used for cell balancing and protection circuits. Its ability to handle high voltages and currents makes it suitable for managing battery cells in large battery packs.
The FQD10N20LTM-VB is a reliable component suitable for a wide range of applications requiring efficient power control and high-performance switching. Its Trench technology ensures low power losses, making it an excellent performer in energy-sensitive designs across multiple industries.
FQD10N20LTM-VB MOSFET has a wide range of applications in multiple fields due to its strong design and performance characteristics. Here are some specific examples:
1. **Power Module**: This MOSFET is well suited for use in power circuits, especially in switching power supplies, where efficient energy conversion is required. Its high VDS rating makes it suitable for 200V input power systems, while the low RDS(ON) ensures minimal energy loss during operation.
2. **Motor Control Circuit**: In motor control applications, especially in DC-DC converters and motor drivers, the FQD10N20LTM-VB provides reliable switching capabilities. Its ability to handle high currents and voltages makes it a good choice for motor control in industrial and automotive applications.
3. **LED Lighting System**: This MOSFET can be used in high-efficiency LED drivers, which require precise current control. Low on-resistance helps reduce power dissipation, which is critical to maintaining the life of the LED system.
4. **Battery Management System (BMS)**: In battery management systems, especially for lithium-ion batteries, the FQD10N20LTM-VB can be used for cell balancing and protection circuits. Its ability to handle high voltages and currents makes it suitable for managing battery cells in large battery packs.
The FQD10N20LTM-VB is a reliable component suitable for a wide range of applications requiring efficient power control and high-performance switching. Its Trench technology ensures low power losses, making it an excellent performer in energy-sensitive designs across multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
