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FQD10N20CTM-VB Product details
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FQD10N20CTM-VB MOSFET Overview
The FQD10N20CTM-VB is a single N-channel MOSFET designed for high-efficiency power conversion applications. This device is packaged in a TO-252 package and combines the advantages of high voltage capability and low on-resistance, making it suitable for applications that require reliable switching performance at high voltages.
The FQD10N20CTM-VB is a single N-channel MOSFET designed for high-efficiency power conversion applications. This device is packaged in a TO-252 package and combines the advantages of high voltage capability and low on-resistance, making it suitable for applications that require reliable switching performance at high voltages.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 200V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 245mΩ @ VGS = 10V
- **Drain current (ID):** 10A
- **Technology:** Trench technology
FQD10N20CTM-VB adopts trench technology, which provides better electrical performance by reducing on-resistance and minimizing gate charge, achieving faster switching speed and higher efficiency.
- **Package:** TO-252
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 200V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 245mΩ @ VGS = 10V
- **Drain current (ID):** 10A
- **Technology:** Trench technology
FQD10N20CTM-VB adopts trench technology, which provides better electrical performance by reducing on-resistance and minimizing gate charge, achieving faster switching speed and higher efficiency.
Domain and module applications：
Application Examples
**1. Power Modules: **
- The FQD10N20CTM-VB is ideal for switch mode power supplies (SMPS) because it can handle high voltages and medium currents. It can be used on the primary side of an isolated converter or as part of a power factor correction (PFC) circuit.
**2. Motor Control Circuits: **
- In motor control applications, the 200V drain-source voltage of the FQD10N20CTM-VB enables it to be used in high voltage motor drives, especially in industrial or automotive applications where robust and efficient switching is required.
**3. DC-DC Converters: **
- This MOSFET is ideal for DC-DC converters in a variety of consumer electronics, providing efficient step-down or step-up power conversion. Its low on-resistance helps minimize power losses during switching.
**4. LED Driver:**
- The FQD10N20CTM-VB can be used in high-power LED driver circuits, where its high voltage rating and high efficiency are critical for driving LEDs in lighting applications, especially in automotive or industrial lighting systems.
**5. Inverter:**
- It is also suitable for use in inverter circuits for solar systems or uninterruptible power supplies (UPS), where its ability to efficiently switch high voltages is critical for reliable operation and energy conversion.
**1. Power Modules: **
- The FQD10N20CTM-VB is ideal for switch mode power supplies (SMPS) because it can handle high voltages and medium currents. It can be used on the primary side of an isolated converter or as part of a power factor correction (PFC) circuit.
**2. Motor Control Circuits: **
- In motor control applications, the 200V drain-source voltage of the FQD10N20CTM-VB enables it to be used in high voltage motor drives, especially in industrial or automotive applications where robust and efficient switching is required.
**3. DC-DC Converters: **
- This MOSFET is ideal for DC-DC converters in a variety of consumer electronics, providing efficient step-down or step-up power conversion. Its low on-resistance helps minimize power losses during switching.
**4. LED Driver:**
- The FQD10N20CTM-VB can be used in high-power LED driver circuits, where its high voltage rating and high efficiency are critical for driving LEDs in lighting applications, especially in automotive or industrial lighting systems.
**5. Inverter:**
- It is also suitable for use in inverter circuits for solar systems or uninterruptible power supplies (UPS), where its ability to efficiently switch high voltages is critical for reliable operation and energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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