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FQB9P25TM-VB Product details
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1. FQB9P25TM-VB Product Introduction
FQB9P25TM-VB is a single P-channel MOSFET in TO263 package, suitable for various power management and switching applications. This device has high reliability and low on-resistance, making it excellent in high-efficiency circuit design. Using advanced Trench technology, this MOSFET provides good switching performance and power handling capabilities, especially suitable for use in high voltage and high current applications.
FQB9P25TM-VB is a single P-channel MOSFET in TO263 package, suitable for various power management and switching applications. This device has high reliability and low on-resistance, making it excellent in high-efficiency circuit design. Using advanced Trench technology, this MOSFET provides good switching performance and power handling capabilities, especially suitable for use in high voltage and high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -150V | -2V | -20A | 150mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -150V | -2V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -150V | -2V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. FQB9P25TM-VB Detailed parameter description
- **Package type**: TO263
- **Polarity configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 150mΩ @ VGS = -10V
- **Drain current (ID)**: -20A
- **Technology type**: Trench
- **Package type**: TO263
- **Polarity configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**: 150mΩ @ VGS = -10V
- **Drain current (ID)**: -20A
- **Technology type**: Trench
Domain and module applications：
3. Application fields and modules of FQB9P25TM-VB
1. **Power management**: This MOSFET can be used in DC-DC converters, especially in power management modules that need to handle high voltage and high current, and can effectively control voltage conversion and current regulation.
2. **Motor control**: In motor drivers, the high current carrying capacity and low on-resistance of this device can improve the efficiency and response speed of the motor, and is suitable for motor control modules of various industrial and household appliances.
3. **Inverters and converters**: FQB9P25TM-VB can be used for efficient switching operations in inverters and converters, especially in photovoltaic inverters and uninterruptible power supply (UPS) systems, helping to improve the energy efficiency of the overall system.
4. **Automotive electronics**: Due to its high voltage resistance, this MOSFET is widely used in automotive electronic systems, such as in the power distribution module and battery management system of the car to ensure reliable power management.
1. **Power management**: This MOSFET can be used in DC-DC converters, especially in power management modules that need to handle high voltage and high current, and can effectively control voltage conversion and current regulation.
2. **Motor control**: In motor drivers, the high current carrying capacity and low on-resistance of this device can improve the efficiency and response speed of the motor, and is suitable for motor control modules of various industrial and household appliances.
3. **Inverters and converters**: FQB9P25TM-VB can be used for efficient switching operations in inverters and converters, especially in photovoltaic inverters and uninterruptible power supply (UPS) systems, helping to improve the energy efficiency of the overall system.
4. **Automotive electronics**: Due to its high voltage resistance, this MOSFET is widely used in automotive electronic systems, such as in the power distribution module and battery management system of the car to ensure reliable power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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